Cryogenic Operation of Silicon Power Devices

1. Front Matter

   Pages i-xviii

   PDF

2. Introduction

   • Ranbir Singh, B. Jayant Baliga

   Pages 1-10

3. Temperature Dependence of Silicon Properties

   • Ranbir Singh, B. Jayant Baliga

   Pages 11-24

4. Schottky Barrier Diodes

   • Ranbir Singh, B. Jayant Baliga

   Pages 25-35

5. P-I-N Diode

   • Ranbir Singh, B. Jayant Baliga

   Pages 37-48

6. Power Bipolar Transistors

   • Ranbir Singh, B. Jayant Baliga

   Pages 49-63

7. Power Mosfets

   • Ranbir Singh, B. Jayant Baliga

   Pages 65-81

8. Insulated Gate Bipolar Transistors

   • Ranbir Singh, B. Jayant Baliga

   Pages 83-94

9. Power Junction Field Effect Transistors

   • Ranbir Singh, B. Jayant Baliga

   Pages 95-103

10. Asymmetric Field Controlled Thyristors

    • Ranbir Singh, B. Jayant Baliga

    Pages 105-115

11. Thyristors

    • Ranbir Singh, B. Jayant Baliga

    Pages 117-126

12. Synopsis

    • Ranbir Singh, B. Jayant Baliga

    Pages 127-135

13. Back Matter

    Pages 137-148

    PDF

The advent of low temperature superconductors in the early 1960's converted what had been a laboratory curiosity with very limited possibilities to a prac­ tical means of fabricating electrical components and devices with lossless con­ ductors. Using liquid helium as a coolant, the successful construction and operation of high field strength magnet systems, alternators, motors and trans­ mission lines was announced. These developments ushered in the era of what may be termed cryogenic power engineering and a decade later successful oper­ ating systems could be found such as the 5 T saddle magnet designed and built in the United States by the Argonne National Laboratory and installed on an experimental power generating facility at the High Temperature Institute in Moscow, Russia. The field of digital computers provided an incentive of a quite different kind to operate at cryogenic temperatures. In this case, the objective was to ob­ tain higher switching speeds than are possible at ambient temperatures with the critical issue being the operating characteristics of semiconductor switches under cryogenic conditions. By 1980, cryogenic electronics was established as another branch of electric engineering.

• Diode
• JFET
• MOSFET
• Thyristor
• control
• diodes
• environment
• material
• model
• tables
• transistor

• Power Semiconductor Research Center, North Carolina State University, Raleigh, USA

  Ranbir Singh, B. Jayant Baliga

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