Overview
- Nominated as an outstanding Ph.D. thesis by Peking University in 2016
- Demonstrates high-performance field-effect transistors based on single-crystalline wurtzite ultrathin InAs nanowires with diameters below 10 nm
- Reveals in detail the relationship between diameter, growth method and device performance
- Proposes unexpected crystal phase- and orientation-dependent electrical properties of InAs nanowires
- Describes a novel method that combines nanofabrication techniques and in-situ electron microscope techniques to directly correlate the atomic-level structure with the properties of individual nanowires and device performance
Part of the book series: Springer Theses (Springer Theses)
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Table of contents (6 chapters)
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Front Matter
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Back Matter
Keywords
About this book
This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in order to scale down electronic devices and improve their performance. However, to date the properties of thin InAs nanowires and their sensitivity to various factors were not known.
The book presents the first study of ultrathin InAs nanowires with diameters below 10 nm are studied, for the first time, establishing the channel in field-effect transistors (FETs) and the correlation between nanowire diameter and device performance. Moreover, it develops a novel method for directly correlating the atomic-level structure with the properties of individual nanowires and their device performance. Using this method, the electronic properties of InAs nanowires and the performanceof the FETs they are used in are found to change with the crystal phases (wurtzite, zinc-blend or a mix phase), the axis direction and the growth method. These findings deepen our understanding of InAs nanowires and provide a potential way to tailor device performance by controlling the relevant parameters of the nanowires and devices.Authors and Affiliations
About the author
Dr. Mengqi Fu received her Ph.D. degree from the School of Electronics Engineering and Computer Science, Peking University, China in 2016. Currently, she is a researcher at Shanghai Academy of Spaceflight Technology where she focuses on the device physics of InAs nanowires as well as the experimental exploration of novel device structures for high-performance nanoelectronic devices.
Dr. Fu’s dissertation was awarded “Excellent Doctoral Dissertation of Peking University” in 2016. She also won the Outstanding Graduates of Beijing at Peking University award. During her Ph.D. studies, Dr. Fu published 15 peer-reviewed articles in international journals, including Nano Lett., Appl. Phys. Lett. and Nanotechnology, 3 of which as first author.
Bibliographic Information
Book Title: Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors
Authors: Mengqi Fu
Series Title: Springer Theses
DOI: https://doi.org/10.1007/978-981-13-3444-3
Publisher: Springer Singapore
eBook Packages: Physics and Astronomy, Physics and Astronomy (R0)
Copyright Information: Springer Nature Singapore Pte Ltd. 2018
Hardcover ISBN: 978-981-13-3443-6Published: 12 December 2018
eBook ISBN: 978-981-13-3444-3Published: 29 November 2018
Series ISSN: 2190-5053
Series E-ISSN: 2190-5061
Edition Number: 1
Number of Pages: XV, 102
Number of Illustrations: 11 b/w illustrations, 57 illustrations in colour
Topics: Nanoscale Science and Technology, Nanotechnology and Microengineering, Semiconductors, Characterization and Evaluation of Materials, Electronic Circuits and Devices, Optical and Electronic Materials