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Formation of KNbO3 Thin Films for Self-Powered ReRAM Devices and Artificial Synapses

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  • © 2018

Overview

  • Nominated as an outstanding Ph.D. thesis by Department of Materials Science and Engineering, Korea University
  • Reports the ReRAM properties of a biocompatible KN ReRAM memristor powered by the KN nanogenerator
  • Indicates the potential of the ReRAM device not only for memory applications but also in neuromorphic system applications

Part of the book series: Springer Theses (Springer Theses)

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Table of contents (5 chapters)

Keywords

About this book

This thesis describes an investigation into homogeneous KN crystalline films grown on Pt/Ti/SiO2/Si substrates, amorphous KN films grown on TiN/Si substrates using the RF-sputtering method, and the ferroelectic and piezoelectric properties of these KN films. KNbO3 (KN) thin films have been extensively investigated for applications in nonlinear optical, electro-optical and piezoelectric devices.  However, the electrical properties of KN films have not yet been reported, because it is difficult to grow stoichiometric KN thin films due to K2O evaporation during growth.

This thesis also reports on the ReRAM properties of a biocompatible KN ReRAM memristor powered by the KN nanogenerator, and finally shows the biological synaptic properties of the KN memristor for application to the artificial synapse of a neuromorphic computing system.


Authors and Affiliations

  • Korea Electronics Technology Institute, Seongnam, Korea (Republic of)

    Tae-Ho Lee

About the author

Dr. Tae-Ho Lee received his Ph.D (2017) from department of Materials Science and Engineering, Korea University and is currently working in Korea Electronics Technology Institute.


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