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3D TCAD Simulation for CMOS Nanoeletronic Devices

Authors: Wu, Yung-Chun, Jhan, Yi-Ruei

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  • Simulates the electrical properties of silicon CMOS (complementary metal–oxide–semiconductor), starting with the designs of 2D MOSFET (metal–oxide–semiconductor field-effect transistor) and 3D Silicon FinFET CMOS (Fin Field Effect Transistor, FinFET) devices
  • Introduces pioneering nano-semiconductor devices such as junctionless field-effect transistor (FET) and tunneling FET variants
  • Predicts the feasible options for silicon and germanium FET of ultimate minimum dimensions
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eBook 74,89 €
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  • ISBN 978-981-10-3066-6
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Hardcover 105,49 €
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Softcover 94,94 €
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About this Textbook

This book demonstrates how to use the Synopsys Sentaurus TCAD 2014 version for the design and simulation of 3D CMOS (complementary metal–oxide–semiconductor) semiconductor nanoelectronic devices, while also providing selected source codes (Technology Computer-Aided Design, TCAD). Instead of the built-in examples of Sentaurus TCAD 2014, the practical cases presented here, based on years of teaching and research experience, are used to interpret and analyze simulation results of the physical and electrical properties of designed 3D CMOSFET (metal–oxide–semiconductor field-effect transistor) nanoelectronic devices.

The book also addresses in detail the fundamental theory of advanced semiconductor device design for the further simulation and analysis of electric and physical properties of semiconductor devices. The design and simulation technologies for nano-semiconductor devices explored here are more practical in nature and representative of the semiconductor industry, and as such can promote the development of pioneering semiconductor devices, semiconductor device physics, and more practically-oriented approaches to teaching and learning semiconductor engineering. 

The book can be used for graduate and senior undergraduate students alike, while also offering a reference guide for engineers and experts in the semiconductor industry. Readers are expected to have some preliminary knowledge of the field.

About the authors

Dr. Yung-Chun Wu received his B.S. degree in Physics from National Central University in 1996, his M.S. degree in Physics from National Taiwan University in 1998, and his Ph.D. from National Chiao Tung University, Taiwan, in 2005. From 1998 to 2002, he was an assistant researcher at National Nano Device Laboratories, Hsinchu, Taiwan, where he was primarily engaged in research on single electron transistor and electron beam lithography technology. In 2006, he joined the Department of Engineering and System Science, National Tsing-Hua University, Hsinchu, Taiwan, where he is currently working as an associate professor. He teaches 3D CMOS semiconductor nanoelectronic devices by TCAD simulation course for seven years. His research interests include nanoelectronic devices and 3D TCAD simulation, flash memory devices, and solar cells. He has published 56 international SCI papers on nanoelectronic devices.

Yi-Ruei Jhan received the B.S. degree in Physics from National Dong Hwa University in 2010, M. S. degree in Engineering and System Science from National Tsing Hua University in 2012, and Ph.D. degree in Engineering and System Science from National Tsing Hua University in 2015. In 2016, he joined the Research and Development department of Taiwan Semiconductor Manufacturing Company (TSMC) after his graduation. His research interests include Nanoelectronic MOSFET devices, TCAD simulation and Nonvolatile memory devices. He is author of book: 3D TCAD Simulation for CMOS Nanoeletronic Devices.

Table of contents (8 chapters)

Table of contents (8 chapters)

Buy this book

eBook 74,89 €
price for France (gross)
  • ISBN 978-981-10-3066-6
  • Digitally watermarked, DRM-free
  • Included format: EPUB, PDF
  • ebooks can be used on all reading devices
  • Immediate eBook download after purchase
Hardcover 105,49 €
price for France (gross)
  • ISBN 978-981-10-3065-9
  • Free shipping for individuals worldwide
  • Immediate ebook access, if available*, with your print order
  • Usually dispatched within 3 to 5 business days.
Softcover 94,94 €
price for France (gross)
  • ISBN 978-981-10-9779-9
  • Free shipping for individuals worldwide
  • Immediate ebook access, if available*, with your print order
  • Usually dispatched within 3 to 5 business days.
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Bibliographic Information

Bibliographic Information
Book Title
3D TCAD Simulation for CMOS Nanoeletronic Devices
Authors
Copyright
2018
Publisher
Springer Singapore
Copyright Holder
Springer Nature Singapore Pte Ltd.
eBook ISBN
978-981-10-3066-6
DOI
10.1007/978-981-10-3066-6
Hardcover ISBN
978-981-10-3065-9
Softcover ISBN
978-981-10-9779-9
Edition Number
1
Number of Pages
XIII, 330
Number of Illustrations
3 b/w illustrations, 240 illustrations in colour
Topics

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