ISBN: 3540417788
TITLE: Proceedings of the 25th International Conference on the Physics of Semiconductors. Part I
AUTHOR: Miura, Ando (Eds.)
TOC:
Part 1
Preface v
Sponsors and Supporters vii
Committees ix
Opening Address
Hiroshi Kamimura xi
Word of Welcome
Manuel Cardona xiii
Welcome Address
Hiroyuki Yoshikawa xv
Gracious Speech
Prince Takamado xvii
Telegram Message
Yoshiro Mori xix
1. Plenary Papers
Twenty years of quantum Hall effect
K. von Klitzing 1
Optical manipulation of electron and nuclear spins in semiconductors
D.D. Awschalom 2
Controlling the conductivity of wide-band-gap semiconductors
C.G. Van de Walle and J. Neugebauer 3
High performance quantum cascade lasers for the mid-to far-infrared: from Band structure engineering to commercialization
F. Capasso 9
Heterostructure lasers: development of new physics and new technology
Zh.I. Alferov 14
Quantum computation
Y. Yamamoto and F. Yamaguchi 20
Hybrid structures of fullerenes and single-wall carbon nanotubes
S. Iijima 24
The science, technology and impact of gallium nitride-based transistors
U.K. Mishra 25
Correlation, decoherence, dephasing and relaxation in semiconductors
D.S. Chemla 26
Experimental signatures of broken symmetries in the quantum Hall regime
J.P. Eisenstein 34
2. Bulk and Dynamics
2.1 Electronic Structure
New effective-mass theory for degenerate bands in semiconductors
B.A. Foreman 41
Antiferromagnetic coupling between the conduction electrons and the 4f electrons in Eu@C_60
S. Suzuki, M. Kushida, S. Amamiya, S. Okada, and K. Nakao 43
First-principles approach to the oxygen vacancies in SrTiO_3
T. Schimizu and T. Kawakubo 45
Hartree-Fock study on the phase diagrams of alkali-metal-doped C_60
J. Hirosawa, S. Suzuki, and K. Nakao 47
Dynamical-mean-field study on the photoemission spectra of alkali-metal-doped C_60
T. Chida, S. Suzuki, and K. Nakao 49
Spin effects in HgSc in megagauss fields
M. von Ortenberg, I. Stolpe, O. Portugall, N. Puhlmann, H.-U. Mueller, M. von Truchsess, C.R. Becker, A. Pfeuffer-Jeschke, and G. Landwehr 51
Temperature dependence of effective band edge mass in n-InSb by magnetophonon resonance up to T = 320 K and influence of nonparabolicity corrections
D. Schneider, S. Krull, C. Brink, G. Irmer, and P. Verma 53
Self-energy correction to the mass of the wide gap semiconductors
M. Oshikiri and F. Aryasetiawan 55
First-principles study of electronic structure of Si_1-xGe_x and Si_1-x-yGe_xC_y disordered alloys
M. Ohfuti, Y. Sugiyama, Y. Awano, and N. Yokoyama 57
Electronic structures of thr C_82 and La@C_82 crystals by the relativistic LCAO method
S. Amamiya, S. Okada, S. Suzuki, and K. Nakao 59
New determination of the camel's back in AlAs
L.E. Bremme, H. Im, H. Choi, P.C. Klipstein, R. Grey, and G. Hill 61
Theory of the electronic structure of Ga_1-yIn_yN_xAs_1-x
A. Lindsay and E.P. O'Reilly 63
Influence of Ag on the energy spectrum of (Bi_1-xSb_x)_2Te_3
V.A. Kulbachinskii, A. Yu. Kaminsky, P. Lostak, and C. Drasar 65
2.2 Phonons
Raman study of isotopically tailored CuBr
J. Serrano, F. Widulle, T. Ruf, C.T. Lin, and M. Cardona 67
Isotope disorder effects in the Raman spectrum of Silicon
F. Widulle, T. Ruf, M. Konuma, I. Silier, W. Kriegseis, V.I. Ozhogin, and M. Cardona 69
Observation of extraordinary phonon polaritons in Zn0
T. Azuhata, K. Torii, M. Ono, and T. Sota 71
Disorder-activated resonant Raman scattering in GaNAs/GaAs structures
I.A. Buyanova, W.M. Chen, H.P. Xin, and C. W. TU 73
Collective dynamics in liquid Ge obtained by an inelastic x-ray scattering experiment
S. Hosokawa, Y. Kawakita, W.-C. Pilgrim, F. Hensel, H. Sinn, and M. Krisch 75
2.3 Optical Properties and Excitons
Non-perturbative terahertz sideband generation from bulk GaAs
M.A. Zudov, J. Kono, A.P. Mitchell, A.H. Chin, and K. Johnsen 77
Ab initio study of optical absorption spectra of semiconductors and conjugated polymers
M.L. Tiago, E.K. Chang, M. Rohlfing, md S.G. Louie 79
Optical response of incoherent excitons in a dense electron-hole plasma
T. Schmielau, G. Manzke, D. Tamme, and K. Henneberger 81
Effect of reabsorption on electroluminescence of excitonic origin in Cu_2O
Y. Nakamura, N. Naka, and N. Nagasawa 83
Null Fresnel drag in a resonant moving medium
F. Bassani, M. Artoni, G.C. La Rocca, and I. Garusotto 85
Coupled plasmon-LO phonon modes at high magnetic fields
A. Wysmolek, M. Potemski, and T. Slupinski 87
Excitation induced flips of the phase of transmitted pulses
G. Manzke, K. Henneberger, J.S. Nägerl, B. Stabenau, G. Böhne, and R.G. Ulbrich 89
Below bottleneck polaritonic radiation in ultra high quality AlGaAs alloys
T.S. Shamirzaev, A.I. Toropov, A.K. Bakarov, K.S. Zhuravlev, A. Yu. Kobitsky, H.P. Wagner, and D.R.T. Zahn 91
Coherent control of speckle: Resonant Rayleigh sattering from a conjugated polymer
S.P. Kennedy, N. Garro, and R.T. Phillips 93
Fine structure of excitons in diamond: A cathodolumninescence study
N. Teofilov, R. Sauer, K. Thonke, T.R. Anthony, and H. Kanda 95
Transient reflection from anisotropic semiconductors studied with coherent control method
Y. Mitsumori, M. Sato, H. Tobioka and F. Minami 97
Exciton-phonom droplets with Bose-Einstein condensate: transport and optical properties
D. Roubtsov, Y. Lépine, and I. Loutsenko 99
Role of the excitonic continuum in the polariton problem
E.A. Muljarov and R. Zimmermann 101
Far IR radiation from p-Ge under crossed directions of electric field and uniaxial pressure
A.A. Abramov, V.I. Akimov, A.T. Dalakyan, V.N. Tulupenko, D.A. Firm, V.M. Bondar, V.N. Poroshin, V.I. Gavrilenko, and M.S. Kagan 103
Anomalous transport of excitons in Cu_2O
S.G. Tikhodeev and N.A. Gippius 105
Pump-probe spectroscopy by infrared probe light in highly excited semiconductors: Beyond the BCS-like mean-fied theory
T.J. Inagaki and M. Aihara 107
Strain-and field-induced optical anisotropies of GaAs measured by RDS
N. Kumagai, T. Yasuda, T. Hanada and T. Yao 109
Electromagnetically induced transparency for intrinsic exciton lines in bulk semiconductors
M. Artoni, G.C. La Rocca and F. Bassani 111
Reversible photoinduced structural changes in GeSe_2 glass at low-temperature
T. Nakaoka, Y. Wang, O. Matsuda, K. Inoue, and K. Murase 113
Photoluminescence due to the scattering process from heavy-hole to light-hole excitons in CuI thin films
I. Tanaka and M. Nakayama 115
Identification of fine structures of magneto-oscillatory spectra in cuprous oxide as quantum manifestation of classical non-integrability
K. Hammura, K. Sakai, and M. Seyama 117
Optical studies of alloy semiconductors Ge_1-xC_x (x<0.05) grown on Si substrates by combined low-energy ion beam and molecular beam epitaxy
M. Sakai, Y. Kitayama, S. Takaku, S. Kimura, and H. Shibata 119
Optical properties of G_2Se_3
H. Nishimura, M. Takumi, K. Nagata, and Y. Miyamoto 121
Exciton sublattice of incommensurate phase in low-dimensional TlInS_2
N. Mamedov, T. Aoki-Matsumoto, B. Gadjiev, H. Uchiki, N. Yamamoto, and S. Iida 123
2.4 Transport and Localization
Isotopic mass and lattice constants of Si and Ge: X-ray standing wave measurements (invited)
J. Zegenhagen, A. Kazimirov, L.X. Cao, M. Konuma, E. Sozontov, D. Plachke, H.D. Carstanjen, G. Bilger, E. Haller, V. Kohn, and M. Cardona 125
Metal-insulator transition in doped semiconductors (invited)
K.M. Itoh 128
Isotope effect on the thermal conductivity of silicon
T. Ruf, R.W. Henn, M. Asen-Palmer, E. Gmelin, M. Cardona, H.-J. Pohl, G.G. Devyatych, P.G. Sennikov, and J. Bollmann 132
Axisymmetric Gunn effect
L.L. Bonilla, R. Escobedo, and F.J. Higuera 134
DC field response of hot carriers under circular polarized intense microwave fields in semiconductors
N. Ishida 136
Transient photoconductivity of pure CuO
H. Yamaguchi, T. Ito, and T. Masumi 138
A microscopic simulation of the evolution of local perturbations
P. Gaubert, L. Varani, J.C. Vaissière J.P. Nougier, E. Starikov, P. Shiktorov, and V. Gruzhinskis 140
Dispersive energy transport, relaxation current and Einstein relationship in band tails
O. Bleibaum, H. Böttger, V.V. Bryksin, and A.N. Samukhin 142
Angle-resolved tunneling spectroscopy of Si conduction band using bonded Si(111) wafer pair
A. Kazama, H. Bando, Y. Miyahara, H. Enomoto, and H. Ozaki 144
Identification of physical mechanisms of tensoeffects in highly strained Si and Ge
S.I. Budzulyak, V.M. Ermakov, Yu.P. Dotsenko, V.V. Kolomoets, Yu.M. Shwarts, E.F. Venger, M. Fukuzawa, P. Verma, M. Yamada, E. Liarokapis, and D.P. Tunstall 146
Metal-insulator transition in anisotropic systems
F. Milde, R.A. Römer, and M. Schreiber 148
Hot electron degradation of the extraordinary magneto-resistance in inhomogenous InSb
D. Poplavskyy, A.C.H. Rowe, R.A. Stradling, and S.A. Solin 150
Critical exponents for the metal-insulator transition of ^70Ge:Ga in magnetic fields
M. Watanabe, K.M. Itoh, M. Morishita, Y. Ootuka, and E.E. Haller 152
Boron in diamond at high concentrations
M.J.R. Hoch, J.E. Lowther, and T. Tshepe 154
Impurity scattering in metallic carbon nanotubes with superconducting pairs
K. Harigaya 156
Self-organization of current density filaments in n-GaAs Corbino discs
K. Aoki 158
Electrical observation of impurity levels in boron doped homoepitaxial diamond
T. Inushima, R.F. Mamin, T. Matsushita, S . Ohoya, and H. Shiomi 160
Monte Carlo simulation of temperature-and field-dependent impact ionization for GaAs
H.K. Jung, S.W. Ko, C.K. You, and K. Taniguchi 162
A study on temperature-and field-dependent impact ionization coefficient for silicon using Monte Carlo simulation
H.K. Jung, C.K. You, S.W. Ko, and K. Taniguchi 164
Critical behavior of the thermoelectric transport properties in amorphous systems near the metal-insulator transition
C. Villagonzalo, R.A. Römer, M. Schreiber, and A. MacKinnon 166
Photo-quenching in small-polaronic conduction in LiMn_2O_4
K. Kushida and K. Kuriyama 168
Low-frequency oscillations and chaos in semi-insulating GaAs subjected to a high magnetic field
A. Neumann, A.G.M. Jansen, P. Wyder, and R. Deltour 170
The influence of the temperature in the scattering mechanisms in pure GaSb
L.G.O. Messias and E. Marega Jr. 172
2.5 Carrier Relaxation and Ultrafast Phenomena
Reversible quantum dynamics of impurity-bound electrons in GaAs (invited)
B.E. Cole, J.B. Williams, M.S. Sherwin, and C.R. Stanley 174
Magnetic field enhanced terahertz emission from semiconductor surfaces
R. McLaughlin, A. Corchia, M.B. Johnston, C.M. Ciesla, D.D. Arnone, G.A.G. Jones, E.H. Lienfield, A.G. Davies, and M. Pepper 178
Dephasing of coherent LO phonon-plasmon coupled modes in polar semiconductors
S. Katayama, M. Hase, M. Iida, and S. Nakashima 180
Femtosecond spectroscopy of large-momentum excitons in GaAs
M. Betz, G. Göger, A. Leitenstorfer, M. Bichler, W. Wegscheider, and G. Abstreiter 182
A novel biexcitonic, non-radiative electron-hole recombination mechanizim and its application in hydro-genated silicon semiconductors
S.B. Zhang and H.M. Branz 184
Annihilation of coherent LO phonon-plasmon coupled modes by lattice defects in n-GaAs
M. Hase, K. Ishioka, K. Ushida, and M. Kitajima 186
Ultrafast electro-absorption at the transition between classical and quantum response
J. Kono and A.H. Chin 188
Deviations from diffusive transport in 100 nm - 100 fs spatio-temporal pump-probe experiments on GaAs
J. Hetzler, A. Brunner, M. Wegener, S. Leu, S. Nau, and W. Stolz 190
Femtosecond Optical excitation of acoustic phonons in bulk GaAs
O.B. Wright, B. Perrin, O. Matsuda, and V.E. Gusev 192
Theory of hot luminescence in pulse-excited semiconductors
K. Hannewald, S. Glutsch, and F. Bechstedt 194
Dynamics of Bloch oscillations under the influence of scattering
F. Löser, Yu.A. Kosevich, K. Köhler, and K. Leo 196
Nonlinear response due to propagating excitonic polaritons in GaAs heterostructure
K. Akiyama, N. Tomita, Y. Nishimura, Y. Nomura and T. Isu 198
Dynamic inter-sideband Fano interference of excitons in ac-driven superlattices
R.-B. Liu and B.-F. Zhu 200
Ultrafast inter-conduction band carrier dynamics in SiC
T. Tomita, S. Saito, T. Suemoto, H. Harima, and S. Nakashima 202
Time-resolved stimulated photon echoes in layered semiconductors
H. Tobioka, Y. Mitsumori, and F. Minami 204
Two-color time-resolved electronic Raman measurement in semiconductors
S. Saito and T. Suemoto 206
Fermi edge singularities in out-of-equilibrium semiconductors
M. Combescot, B. Roulet, and C. Tanguy 208
Theory of coherent oscillation of phonon-polaritons
C.S. Kim, A.M. Satanin, G.D. Sanders, and C.J. Stanton 210
2.6 Phase Transition and Ordering
Self-organized electron density patterns in n-GaAs induced by microwaves
V. Novák, V. V. Bel'kov, D.M. Mathúna, S.D. Ganichev, and W. Prettl 212
Novel observation of magnetic-field induced metal-insulator transition in n-GaAs through far-infrared photoconductivity measurements
H. Kobori, M. Inoue, and T. Ohyama 214
Magnetization of single MnTe (sub)monolayers embedded in nonmagnetic quantum wells
G. Prechtl, W. Heiss, S. Mackowski, A. Bonanni, E. Janik, H. Sitter, and W. Jantsch 216
Energy relaxation by phonon scattering in long-range ordered (Al_0.5 Ga_0.5)_0.5 In_0.5 P
T. Kita, K. Yamashita, T. Nishino, Y. Wang, and K. Murase 218
Low-dimensional magnetism in polymorphic compounds, VOMoO_4 and (V_0.56, Mo_0.44)_2 O_5
I. Shiozaki, S. Takada, S. Wada, and T. Toyoda 220
Highly efficient luminescence in partially ordered GaInP_2
X.H. Zhang, S.J. Chua, and J.R. Dong 222
Kinetics of the amorphous-to-crystalline phase transformation in Ge:Sb:Te alloys used for the phase-change optical memory applications
E. García-García, E. Morales-Sánchez, J. González-Hernández, E. Prokhorov, Yu. Vorobiev, and S. Kostylev 224
The intensity and wavelength dependence for photo-induced crystallization process in amorpbous GeSe_2
K. Sakai, K. Maeda, H. Yokoyama, and T. Ikari 226
Stiffness transition and connectivity in amorphous chalcogenide semiconductors
Y. Wang, T. Nakaoka, M. Nakamuna, O. Matsuda, and K. Murase 228
Effect of pressure on electrical transport in electron doped perovskite manganite Sr_0.9 Ce_0.1 MnO_3
T. Eto, F. Honda, G. Oomi, and A. Sundaresan 230
2.7 Magnetic and Semimagnetic Semiconductors
Ferromagetism in diluted magnetic semiconductors
J. König, H.-H. Lin, and A.H. MacDonald 232
Ferromagnetic interactions in p- and n-type II-VI diluted magnetic semiconductors
T. Andrearczyk, J. Jaroszynski, M. Sawicki, L. van Khoi, T. Dietl D. Ferrand, C. Bourgognon, J. Cibert, S. Tatarenko, T. Fukumura, Z. Jin, H. Koinuma, and M. Kawasaki 234
Theoretical predictions for transparent ferromagnets with transition metal atom doped ZnO
K. Sato and H. Katayama-Yoshida 236
sp-d exchange intcraction in GaMnAs investigated by resonant Kerr effect under high magnetic field
F. Michelini, N. Nègre, G. Fishman, M. Goiran, J. Sadowski, E. Vanelle, and S. Askénasy 238
Giant tunability of excitonic photoluminescence transitions in antiferromagnetic EuTe epilayers
W. Heiss, G. Prechtl, and G. Springholz 240
Hybridization-induced exchange interaction between the conduction band electrons and Mn ions in diluted magnetic semiconductors
A.K. Bhattacharjee and J. Pérez- Conde 242
Cross-sectional scanning tunneling microscope (STM) study of Mn-doped GaAs layers
T. Tsuruoka, R. Tanimoto, N. Tachikawa, S. Ushioda, F. Matsukura, and H. Ohno 244
Anomalous enhancement of the cyclotron mass of electrons in Cd_1-x Mn_x Te observed at very high magnetic fields
Y.H. Matsuda, T. Ikaida, T. Yasuhira, N. Miura, S. Kuroda, F. Takano, and K. Takita 246
Electronic structure of superlattices of II-VI/III-V diluted magnetic semiconductors
T. Kamatani and H. Akai 248
Tunneling into amorphous Gd_xSi_1-x at the metal-insulator transition and its independence of magnetic impurities in the barrier
W. Teizer, F. Hellman, and R.C. Dynes 250
Spin-lattice relaxation in semimagnetic quantum wells with a 2DEG
D.R. Yakovlev, A.V. Scherbakov, B. König, W. Ossau, A.V. Akimov, T. Wojtowicz, G. Karczewski, and J. Kossut 252
Magnetic-field-driven metal-insulator transition in magnetic semiconductor (Ga,Mn)As
T. Hayashi, Y. Hashimoto, S. Yoshida, S. Katsumoto, and Y. Iye 254
The effect of stress on magnetic properties of ferromagnetic EuS-PbS and EuS-PbSe semiconductor structures
T. Story, M. Arciszewska, M. Chernyshova, W. Dobrowolski, W. Mac, A. Twardowski, R. Swirkowicz, and A.Yu. Sipatov
Fundamental properties of Fe-based III-V magnetic alloy semicondutcor (Ga, Fe)As
R. Moriya, T. Kondo, Y. Katsumata, H. Munekata and S. Haneda 258
The waves of spin and charge densities in diluted magnetic semiconductors near the paramagnetic-ferro-magnetic phase transition
Yu.G. Semenov and V.N. Sokolov 260
Electronic structure of Ga_1-x Mn_x As studied by photoemission spectroscopy
J. Okabayashi, A. Kimura, O. Rader, T. Mizokawa, A. Fujimori, T. Hayashi, and M. Tanaka 262
Electronic structure and magnetic properties of (Zn,Mn)Se with carriers doping studied by FLAPW method
K. Matsushita, H. Harima, A. Yanase, and H. Katayama-Yoshida 264
Cyclotron resonance of spin polaron in CdMnTe/CdMgTe 2D electron systems
Y. Imanaka, T. Takamasu, G. Kido, G. Karczewski, T. Wojtowicz, and J. Kossut 266
Far infrared absorption spectra in ferromagnetic Ga_1-xMn_xAs
Y. Nagai, T. Kunimoto, K. Nagasaka, H. Nojiri, M. Motokawa, F. Matsukura, and H. Ohno 268
Dynamical aspects of exciton magnetic polaron formation in diluted magnetic semiconductor quantum wells
T. Stirner and W.E. Hagston 270
Cryobaric exciton magnetophotoluminescence in Cd_1-xMn_xSe
N. Kuroda and Y.H. Matsuda 272
Line shape of excitation spectra of photoluminescence in CdMnTe and its quantum wells
K. Takamura, S. Yamamoto, and J. Nakahara 274
3. Growth, Surfaces, and Interfaces
3.1 Atomic Structure
Possibility of the quantum fluctuation of the Si(OO1) surface at low temperature
Y. Yoshimoto and M. Tsukada 277
(2x4) and (4x2) reconstructions of GaAs(OO1): The surface phase diagram re-examined
W.G. Schmidt, S. Mirbt, and F. Bechstedt 279
Theory of Al_2O_3(0001) surfaces and their employment as a substrate for nitride growth
R. Di Felice and J.E. Northrup 281
Influence of strain and diffusion on the growth of V-groove InGaAs/GaAs quantum wires
K. Leifer, F. Lelarge, A. Rudra, S. Stauss, and E. Kapon 283
Atomic structure at a Si (001) oxidation front
N. Ikarashi, K. Watanabe, and Y. Miyamoto 285
Binding and migration paths of Au adatoms on the GaAs (001)-beta2(2x4) surface
A.A. Bonapasta and F. Buda 287
Surface topography of Si(111)-7x7 reconstruction: first-principles investigations
S.H. Ke, T. Uda, and K. Terakura 289
A structural model of Si(111)(2surd3 x 2surd3) R30°-Sn
T. Ichikawa, K. Cho, T. Onodera, A. Mizoguchi, and T. Ohkoshi 291
Synchrotron radiation photoemission studies of surface reconstruction on GaAs (001)
K. Ono, T. Mano, K. Nakamura, M. Mizuguchi, S. Nakazono, K. Horiba, T. Kihara, H. Kiwata, I. Waki, M. Oshima, N. Koguchi, and A. Kakizaki 293
Structural ordering on Si(111)surd3 x surd3-Ag surface: Monte Carlo simulation based on first-principles calculations
Y. Nakamura, Y. Kondo, J. Nakamura, and S. Watanabe 295
STM and RHEED study of Ge(110) reconstructions
T. Ichikawa, H. Fujii, and A. Sugimoto 297
3.2 Electronic Structure
Terrace and step contributions to the surface optical anisotropy of Si(001)
W.G. Schmidt, F. Bechstedt, and J. Bernholc 299
Nano-scale ferromagnets on semiconductors: Ga adsorbates on Si (100) surfaces
S. Okada and A. Oshiyama 301
AlGaN/GaN lateral polarity heterostructures
A.P. Lima, C. Miskys, O. Ambacher, M. Stutzmann, R. Dimitrov, V. Tilak, M.J. Murphy, and L.F. Eastman 303
Modification of the Si surface electronic properties by Ge nanostructures: Surface photovoltage studies
K. Nauka and T.I. Kamins 305
Ab initio study of SiC/Ti polar interfaces
S. Tanaka and M. Kohyama 307
3.3 Adsorption and Surface Reactions
Microscopic mechanism of Si oxidation (invited)
K. Shiraishi, H. Kageshima, and M. Uematsu 309
Electron paramagnetic resonance of a single-crystal surface: the Si(111)-7x 7 surface and its oxidation process
T. Umeda, M. Nishizawa, T. Yasuda, J. Isoya, S. Yamasaki, and K. Tanaka 313
Atomic layer oxidation of H terminated Si(100) surface: Domino reaction via oxidation and H migration
K. Kato, H. Kajiyama, S. Heike, T. Hashizume, and T. Uda 315
Time-dependent density-functional simulations of desorption dynamics of H and Br terminated Si surfaces induced by electronic excitations
Y. Miyamoto and O. Sugino 317
Mechanism of migration and dissociation for As_2 molecule on GaAs(001) surfaces during the MBE growth: A computational study
A. Ishii, K. Seino, and T. Aisaka 319
Photoemission spectroscopy of Si(OO1) surfaces oxidized by hyperthermal O_2 molecular beams
Y. Teraoka and A. Yoshigoe 321
Formation of first InSb molecular layer on Si(111) substrate: Role of In(4x 1) reconstruction
B.V. Rao, D. Gruznev, T. Tambo, and C. Tatsuyama 323
Laser-induced electronic instability on semiconductor surfaces of Si(111)-(7x7) and InP(110)-(1x1)
K. Tanimura, J. Kanasaki, and K. Ishikawa 325
Surface states of (100)n-GaAs with adsorbed oxygens and their dependence on chemical treatment
Y. Kasai, T. Tsuzuku, Y. Ohta, T. Inokuma, K. Iiyama, and S. Takamiya 327
Real-time observation of initial oxidation on highly B-doped Si (100)-2x1 surfaces using scanning tunneling microscopy
K. Ohmori, M. Tsukakoshi, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda 329
Fabrication of boron delta-doped structures in Si by solid phase epitaxy
T. Ishikawa, H. Nagai, K. Ishii, and S. Matsumoto 331
Effect of gas adsorption on the interfacial states at n-SnO_2 /p-Si heterojunction
R.B. Vasiliev, A.M. Gaskov, M. N. Rumyanseva, and L.I. Ryabova 333
Structure of a SiN layer on Si(111) surface
T. Yamasaki, C. Kaneta, and T. Uda 335
3.4 Bulk Growth and Thin Film Epitaxy
Distinct morphological evolution of Si_1-xGe films on Si(100) during gas-source MBE and photo-CVD
H. Akazawa 337
Toward predictive growth simulations: MBE on GaAs(001)
P. Kratzer and M. Scheffler 339
Dual Au-Si bonding character and Au surfactant effect on Au/Si(111) surfaces
M. Murayama, T. Nakayama, and A. Natori 341
Theoretical study on epitaxial growth of lattice-mismatched semiconductor systems
N. Miyagishima, K. Okajima, K. Takeda, N. Oyama, T. Ohno, K. Shiraishi, and T. Ito 343
Control of electronic structure and thermodynamic stability of SrTiO_3 with Ru or Nb doping from first-principles calculation
T. Schimizu and T. Kawakubo 345
Modeling and simulation of FBAR devices fabricated on Si
D.H. Kim, G. Yoon, and H.D. Park 347
Nucleation mechanism of stacking fault during Si epitaxial growth by chemical vapor deposition with dichlorosilane
Y. Takakuwa, M.K. Mazumder, and N. Miyamoto 349
Self-limiting etching prior to self-limiting growth in ultra-high vacuum for obtaining clean interface
N. Otsuka, J. Nishizawa, Y. Oyama, H. Kikuchi, and K. Suto 351
Reflectance-difference spectroscopy of (001) InAs surfaces in ultrahigh vacuum
T. Kita, H. Tango, K. Tachikawa, K. Yamashita, and T. Nishino 353
3.5 Growth of Self-Assembled Dots
Controlling of lateral and vertical order in self-organized PbSe quantum dot superlattices (invited)
G. Springholz, M. Pinczolits, V. Holy, P. Mayer, G. Bauer, H.H. Kang, and L. Salamanca-Riba 355
Shape analysis of single and stacked InAs quantum dots at the atomic level by cross-sectional STM
D.M. Bruls, J.W.A.M. Vugs, P.M. Koenraad, M.S. Skolnick, M. Hopkinson, and J.H. Wolter 359
Formation procees of InAs dots including Mn atoms and their physical properties
S. Okumura, H. Asahi, Y.K. Zhou, J. Asakura, M. Kanamura, K. Asami, H. Kubo, C. Hamaguchi, und S. Gonda 361
Shape and size of buried SiGe islands
J. Stangl, V. Holý, A. Daniel, T. Roch, G. Bauer, T.H. Metzger, J. Zhu, K. Brunner, and G. Abstreiter 363
Optical anisotropy of Stranski-Krastanov growth surface of InAs on GaAs (001)
T. Kita, H. Tango, K. Tachikawa, K. Yamashita, T. Nishino, T. Nakayama, and M. Murayama 365
Lasers based on self-assembled InAs/GaAs and InP/InGaP quantum dots
O.G. Schmidt, M.O. Lipinski, Y.M. Manz, H. Heidemeyer, W. Winter, and K. Eberl 367
Effect of vertical size uniformity on diffraction contrast images of stacked InGaAs/GaAs quantum dots
M. De Giorgi, A. Passaseo, R. Cingolani, A. Taurino, and M. Catalano 369
Lateral distribution of buried self-assembled InAs quantum dots on GaAs
K. Zhang, J. Falta, Ch. Heyn, Th. Schmidt, and W. Hansen 371
Nucleation site control in self-assembling Si quantum dots on ultrathin SiO_2/c-Si
S. Miyazaki, M. Ikeda, E. Yoshida, N. Shimizu, and M. Hirose 373
Reversibility of the island shape, volume and density in Stranski-Krastanow growth
N.N. Ledentsov, V.A. Shchukin, R. Heitz, D. Bimberg, V.M. Ustinov, N.A. Cherkashin, A.R. Kovsh, Yu.G. Musikhin, B.V. Volotik, A.E. Zhukov, G.E. Cirlin, and Zh.I. Alferov 375
Effect of Si diffusion on growth of GeSi self-assembled islands
A.V. Novikov, N.V. Vostokov, S.A. Gusev, Yu.N. Drozdov, Z.F. Krasil'nik, D.N. Lobanov, L.D. Moldavskaya, M. Miura, V.V. Postnikov, M.V. Stepikhoa, Y. Shiraki, and N. Usami 377
Observation of a universal behavior in the growth of InAs self-assembled quantum dots on patterned substrates
S.W. Hwang, M.H. Son, B.H. Choi, D. Ahn, C.K. Hyon, S.-H. Song, Y.J. Park, and E.K. Kim 379
Monte Carlo simulation of the self-organised growth of quantum dots with anisotropic surface diffusion
M. Meixner, R. Kunert, S. Bose, E. Schöll, V.A. Shchukin, D. Bimberg, E.Penev, and P. Kratzer 381
Growth of InAs quantum dots on ( 110 )-oriented cleaved GaAs surfaces
M. Gerling, S. Jeppesen, A. Gustafsson, and L. Samuelson 383
Fabrication of compound-semiconductor quantum dots on a Si{111) substrate terminated by bilayer-GaSe
K. Ueno, K. Saiki, and A. Koma 385
Optimized growth procedure for self-organized InAs quantum dots
E. Steimetz, T. Wehnert, P. Kratzer, L.G. Wang, Q.K.K. Liu, H. Kirmse, J.-T. Zettler, W. Neumann, M. Scheffler, and W. Richter 387
Effect of inter-island interaction on the growth of self-assembled quantum dots
S. Vannarat, S.T. Chui, K. Esfarjani, and Y. Kawazoe 389
Properties of CdSe/ZnSe based quantum heterostructures with and without lateral confinement potentials
E. Kurtz, M. Schmidt, B. Dal Don, S. Wachter, D. Litvinov, D. Gerthsen, H. Kalt, and C. Klingshirn 391
Growth, morphology and optical properties of metal clusters on semiconductor surface (Au/GaAs)
N. Dmitruk, T. Barlas, I. Dmitruk, T. Mikhailik, and V, Romaniuk 393
Formation of GaAsN nanoinsertions in a GaN matrix
A.F. Tsatsul'nikov, I.L. Krestnikov, W.V. Lundin, A.V. Sakharov, D.A. Bedarev, A.S. Usikov, B.Ya. Ber, V.V. Tret'yakou, Zh.I. Alferov, N.N. Ledentsov, A. Hoffmann, D. Bimberg, T. Riemann, J. Christen, Yu.G. Musikhin, I.P. Soshnikov, D. Litvinov, A. Rosenauer, D. Gerthsen, and A. Plaut 395
Extremely uniform InAs/GaAs quantum dots emitting at 1.46 mkm at. room temperature grown by MOCVD with Bi doping
B.N. Zvonkov, I.A. Karpovich, N.V. Baidus, D.O. Filatov, Yu.Yu. Gushina, S.V. Morozov, and S.B. Levichev 397
Effects of InAs coverage on the Ga diffusion into InAs self-assembled quantum dots on GaAs(100)
N. Matsumura, T. Haga, S. Muto, Y. Nakata, and N. Yokoyama 399
Photoluminescence and atomic force microscopy studies of InAs/InSb nanostructures grown by MBE
Ya.V. Terent'ev, A.A. Toropov, V.A. Solov'ev, B.Ya. Mel'tser, M.M. Moiseeva, S.V. Ivanov, B. Magnusson, B. Monemar, and P.S. Kop'ev 401
Three dimensional self-organization of InAs quantum-dot multilayers
J.C. González, F.M. Matinaga, W.N. Rodrigues, M.V.B. Moreira, A.G. de Oliveira, M.I.N. da Silva, J.M.C. Vilela, M.S. Andrade, D. Ugarte, and P.C. Silva 403
Investigation of the properties of molecular beam epitaxy grown self-organised ZnSe quantum dots embedded in ZnS
C.L. Yang, L.W.Lu, W.K. Ge, Z.H. Ma, I.K. Sou, and J.N. Wang 405
Exciton localization in alloy/alloy interfaces of InGaAs/GaAs(001) stepped quantum wells
A. D'Andrea, F. Fernández-Alonso, M. Righini, D. Schiumarini, S. Selci, and N. Tomassini 407
Characterization of Ge nanocrystal embedded in SiO_2 films
H. Fukuda, S. Sakuma, T. Yamada, S. Nomura, M. Nishiuno, T. Higuchi, and S. Ohshima 409
3.6 Semiconductor-Nonsemiconductor Interfaces
Control of quantum confinement in metal-clad InAs quantum wells
S. Tsujino, S.J. Allen, M. Rüfenacht, M. Thomas, J.P. Zhang, J. Speck, T. Eckhause, and B. Gwinn 411
Unsaturated cyclic-hydrocarbon molecules on a Si (001) surface: A first-principles approach
K. Akagi and S. Tsuneyuki 413
Organic modified GaAs( 100) Schottky contacts
Th. Lindner, T.U. Kampen, S. Park, and D.R.T. Zahn 415
Interface effects on exciton states in a CdTe/(Cd, Mn)Te quantum well
H. Yokoi, Y. Kakudate, Yu.G. Semenov, S. Takeyama, S.W. Tozer, Y. Kim, T. Wojtowicz, G. Karczewski, and J. Kossut 417
Reaction of atomic hydrogen with the Si(100)/SiO_2 interface defects
C. Kaneta, T. Yamasaki, and T. Uda 419
Temperature dependence of low frcqucncy noise mechanisms in Schottky barrier structure
J.I. Lee, I.K. Han, J. Brini, A. Chovet, and C.A. Dimitriadis 421
Interfacial transition regions of gate dielectrics in advanced silicon devices
G. Lucovsky, J.C. Phillips, and M.F. Thorpe 423
ESR and magnetic measurement of Ni/GaAs composite system
Y. Seino, S.A. Haque, A. Matsuo, Y. Yamamoto, S. Yamada, and H. Hori 425
3.7 STM, AFM, and Near-Field Studies of Surfaces and Interfaces
Imaging of Friedel oscillations at epitaxially grown InAs(111)A surfaccs using scanning tunneling microscopy (invited)
K. Kanisawa, M.J. Butcher, H. Yamaguchi, and Y. Hirayama 427
Probing of subsurface dopants buried in silicon by scanning tunneling microscopy
Y. Suwa, T. Hitosugi, S. Matsuura, S. Heike, S. Watanabe, T. Onogi, and T. Hashizume 431
Effect of tip morphology on AFM images: Ab initio simulations on GaAs(ll0) surface
S.H. Ke, T. Uda, I. Stich, and K. Terakura 433
Novel investigation technique for interior III/V-semiconductor interfaces
S. Nau, G. Bernatz, and W. Stolz 435
Observation of dopant-atom dimers on hydrogen-terminated Si(100)-2x1 surface by scanning tunneling microscopy
S. Matsuura, M. Fujimori, S. Heike, Y. Suwa, T. Onogi, H. Kajiyama, K. Kitazawa, and T. Hashizume 437
Reconstruction on Si(l00) surface induced by the type-A defects near T_c
M. Okamoto, T. Yokoyama, and K. Takayanagi 439
Space and energy distribution of surface gap states on MBE-grown and silicon-covered (001) GaAs surfaces studied by scanning tunneling spectroscopy
N. Negoro, S. Kasai, and H. Hasegawa 441
Atomically resolved imaging of semiconductor surfaces using noncontact atomic forte microscopy
S. Morita and Y. Sugawara 443
Atomic structure of Gap (001) and InP (001) reconstructions: Scanning tunneling microscopy and ab initio theory
K. Lüdge, P. Vogt, O. Pulci, N. Esser, F. Bechstedt, and W. Richter 445
Bias voltage dependence of scanning tunneling microscopy images of a Si (100)2x3-Ba surface
K. Ojima, M. Yoshimura, and K. Ueda 447
Removal of particles from surface of silicon using clean solutions with surfactants and chelates
C. Baocheng, Y. Xinhao, M. Honglei, M. Jin, and L. Zhengli 449
4. Heterostructures and Superlattices: Optical
4.1 Structural Properties
Phase difference between coherent GaSb-like and AlSb-like LO phonons in GaSb/AlSb superlattices
H. Takeuchi, K. Mizoguchi, M. Nakayama, K. Kuroyanagi, and T. Aida 451
Plasmon-phonon coupling at Ga_0.5 In_0.5 P/GaAs heterointerfaces induced by CuPt-type ordering
K. Yamashita, T. Kita, T. Nishino, Y. Wang, K. Murase, C. Geng, F. Scholz, and H. Schweizer 453
Optical properties and band alignment of ZnSe/ZnMgBeSe heterostructures
K. Godo, M.W. Cho, J.H. Chang, S.K. Hong, H. Makino, T. Yao, M.Y. Shen, and T. Goto 455
Analysis of Raman spectra of quasiperiodic GaAs-AlAs heterostructures
E. Matsushita and T. Furuyama 457
4.2 Electronic Structures
Controlling Fermi-edge singularities by a periodic external potential
S. Nomura, T. Nakanishi, and Y. Aoyagi 459
Optical anisotropy change of buried SiO_2/Si interfaces during layer-by-layer oxidation
T. Nakayama and M. Murayama 461
Negatively charged excitons in semiconductor quantum wells: effects of longitudinal electric and magnetic fields
L.C.O. Dacal, M.J.S.P. Brasil, and J.A. Brum 463
The influence of intraband transitions on the resonant and extended electronic states in GaAs/AIGaAs asymmetric quantum wells as a function of their confinement
M. Levy, R. Beserman, R. Kapon, A. Sa'ar, V. Thierry-Mieg, and R. Planel 465
Zeeman mapping of probability densities in square quantum wells using ultranarrow probes
G. Prechtl, W. Heiss, A. Bonanni, E. Janik, S. Mackowski, G. Karczewski, and W. Jantsch 467
Tight-binding description of GaAs/AlAs quantum wells and superlattices: Gap transitions and intervalley couplings
R.B. Capaz, J.G. Menchero, T.G. Dargam, and B. Koiller 469
Large quantum confinement effect of conduction electrons in ZnSe/BeTe type II heterostructures
R. Akimoto, Y. Kinpara and K. Akita 471
A study of the GaAs/partially ordered GaInP interface
T. Kobayashi, K. Inoue, A.D. Prins, K. Uchida, and J. Nakahara 473
Analytical and transfer matrix solutions of the k·p Hamiltonian for the X-band in AlAs confined systems
L.E. Bremme and P.C. Klipstein 475
Relation between the in-plane polarization anisotropy of the optical properties and the microscopic atomic configuration in (Ga_0.5 In_0.5As)/(InP) superlattices
R. Magri and S. Ossicini 477
Comparison of empirical pseudopotential and k·p calculations in p-doped strained layer SiGe quantum wells
Z. Ikonic, R.W. Kelsall, and P. Harrison 479
Plasmons in laterally density modulated 2D electron gas in shallow etched single-heterostructures
T. Tagawa and S. Katayama 481
Electronic properties of quantum wire superlattices elaborated by the 'Atomic Saw' method
F. Michelini, L. Ressier, G. Fishman, E. Vanelle, F. Laruelle, and J.P. Peyrade 483
Cyclotron resonance of holes and shallow acceptor photoconductivity in strained MQW Ge/GeSi heterostructures in strong magnetic fields
V.Ya. Aleshkin, I.V. Erofeeva, V.I. Gavrilenko, O.A. Kuznetsov, M.D. Moldavskaya, V.L. Vaks, and D.B. Veksler 485
Breakdown of rotational symmetry at semiconductor interfaces
O. Krebs, S. Cortez, and P. Voisin 487
4.3 Magnetic Superlattices
Binding energy and internal magnetic field of exciton magnetic polarons in a single semimagnetic quantum dot
G. Bacher, A.A. Maksimov, A. McDonald, M.K. Welsch, H. Schömig, V.D. Kulakovskii, A. Forchel, Ch. Becker, G. Landwehr, and L.W. Molenkamp 489
Spin transport of excitons in asymmetric double quantum wells of Cd_l-xMn_xTe
K. Kayanuma, E. Shirado, M.C. Debnath, I. Souma, S. Permogorov, and Y. Oka 491
Raman scattering in MnTe/ZnTe and ZnSe/ZnMnSe multilayer semiconductor superlattices
K. Ozawa, Y. Tanaka, K. Iio, N. Nakajima, Y. Nabetani, and T. Matsumoto 493
4.4 Interband Transitions and Excitons
Exciton-trion coupling in modulation doped quantum well structures
V.P. Kochereshko, G.V. Astakhov, R.A. Suris, D.R. Yakovlev, W. Ossau, J. Nurnberger, W. Faschinger, and G. Landwehr 495
Rapid recombination process of free trions
D. Sanvitto, R.A. Hogg, A.J. Shields, D.M. Whittaker, M.Y. Simmons, D.A.Ritchie, and M. Pepper 497
Spin dependent exciton-exciton interaction in hot and cold 2D exciton gases controlled by an electric field
G. Aichmayr, L. Viña, S.P. Kennedy, R.T. Phillips, and E.E. Mendez 499
From excitons to Fermi edge singularity
G. Yusa, H. Shtrikman, and I. Bar-Joseph 501
Magnetic traps for excitons in GaAs/Al_xGa_1-xAs quantum wells
J.A.K. Freire, F.M. Peeters, A. Matulis, V.N. Freire, and G.A. Farias 503
Excess carrier effects upon the excitonic absorption thresholds of remotely doped GaAs/AlGaAs quantum wells
R. Kaur, A.J. Shields, R.A. Hogg, J.L. Osborne, M.Y. Simmons, D.A. Ritchie, and M. Pepper 505
Observation of heavy-hole minibands in ultra-short period superlattices
M. Eckardt, W. Geisselbrecht, S. Malzer, G.H. Döhler, K. Maranowski, and A.C. Gossard 507
CdTe quantum wells as ideal systems for the study of negatively charged excitons: A spectral and temporal analysis
V. Ciulin, P. Kossacki, M. Kutrowski, A. Esser, S. Haacke, J.-D. Ganière, T. Wojtowicz, and B. Deveaud 509
Collapse of the excitonic states at r_s= 8 in high quality GaAs/AlGaAs single quantum wells
S.I. Gubarev, I.V. Kukushkin, S.V. Tovstonog, M.Yu. Akimov, L.V. Kulik, J. Smet, K. von Klitzing, and W. Wegscheider 511
Phase sensitive detection of transmitted femtosecond pulses in GaAs quantum wells
R. Kawahara, T. Kurodar, Y. Mitsumori, and F. Minami 513
Oscillatory behavior of the Gamma-X Coupling with AlAs thickness in type II GaAs/AlAs heterostructures
C. Gourdon, D. Martins, V. Voliotis, P. Lavallard, and E.L. Ivchenko 515
Blue Stark shift in composite quantum wells
A.Yu. Silov, B. Aneeshkumar, M.R. Leys, H. Vonk, and J.H. Wolter 517
Spectroscopic studies of the interaction of an electron gas with photoexcited electron-hole pairs in modulation-doped GaAs/AlGaAs quantum wells
T. Yeo, H.A. Nickel, G. Comanescu, H.D. Cheong, M. Furis, A. Petrou, and B.D. McCombe 519
Resonant Rayleigh scattering of exciton-polaritons in multiple quantum well structures
A.V. Kavokin, G. Malpuech, W. Langbein, and J.M. Hvam 521
Speckle-correlation spectroscopy on localized spin-split exciton states in quantum wells
R. Zimmermann, W. Langbein, E. Runge, and J.M. Hvam 523
Optical properties of trions in semiconductor nanostructures
A. Esser, E. Runge, and R. Zimmermann 525
Internal transitions of charged magneto excitons in II-VI quantum well heterostructures
C.J. Meining, M. Furis, H.A. Nickel, D.R. Yakovlev, W. Ossau, A. Petrou, and B.D. McCombe 527
Many-body corrections in n-type 2D telluride structures
V. Huard, R.T. Cox, K. Saminadayar, C. Bourgognon, S. Tatarenko, and L. Besombes 529
Possibility of excitonic polymers in type-II superlattices
T. Tsuchiya 531
Localised exciton transitions in high-quality GaAs/AlGaAs quantum wells
A.G. Steffan, A. García-Cristóbal, R.T. Phillips, and D.A. Ritchie 533
Field-induced optical anisotropy in semiconductor superlattices: the Wannier-Pockels effect
S. Cortez, O. Krebs, J.C. Harmand, J.L. Gentner, and P. Voisin 535
Origin of optical-phonon Raman spectra in multiple quantum wells
B.-F. Zhu und S.F. Ren 537
Temperature dependence of the band gap in (InGa)(AsN)/GaAs single quantum wells
A. Polimeni, M. Capizzi, M. Geddo, M. Fischer, M. Reinhardt, and A. Forchel 539
Charge transfer of carriers by interband photoexcitation in asymmetric GaAs/AlGaAs coupled quantum wells
M. Levy, Yu.L. Khait, R. Beserman, A. Sa'ar, V. Thierry-Mieg, and R. Planel 541
Optical properties of InGaAsN/GaAs QWs for long-wavelength lasers on GaAs
H. Riechert, A.Yu. Egorov, Gh. Dumitras, and B. Borchert 543
Effective mass theory for a magneto-exciton in the type II superlattices or confinement structures and the origin of anomalous photoluminescence
K. Kouzu, M. Nishimura, und H. Kamimura 545
Modulation spectroscopy of critical points in excitonic energy structure of thick GaAs quantum wells
V.G. Davydov, Yu.K. Dolgikh, Yu.P. Efimov, S.A. Eliseev, A.V. Fedorov, I.Ya. Gerlovin, I.V. Ignatiev, I.E. Kozin, V.V. Petrov, V.V. Ovsyankin, I.A. Yugova, H.-W. Ren, S. Sugou, and Y. Masumoto 547
Exciton-phonon coupling in wida bandgap II-VI quantum wells
B. Urbaszek, A. Balocchi, C. Morhain, C. Bradford, X. Tang, C.M. Townsley, C.B. O'Donnell, S.A. Telfer, K.A. Prior, B.C. Cavenett, and R.J. Nicholas 549
Magnetooptical evidence of many-body effects in spin-polarized 2D electron gas
C. Testelin, A. Lemaître, C. Rigaux, T. Wojtowicz, G. Karczewski, and F. Teran 551
Forbidden interband transitions and the indirect valence band in strained GaInAs/InP quantum wells
A. Dörnen, J. Shao, V, Härle, and F. Scholz 553
Magnetic field and pressure effects of photoluminescence in a GaP/AlP short-period superlattice
K. Uchida, N. Miura, F. Issiki, and Y. Shiraki 555
Optical properties of interacting excitons in quantum wells
S. de-Leon and B. Laikhtman 557
Recombination processes of GaNAs/GaAs structures: Effect of rapid thermal annealing
I.A. Buyanova, W.M. Chen, G. Pozina, P.N. Hai, N.Q. Thinh, H.P. Xin, and C.W. Tu 559
Dressed excitons and shallow impurities in low-dimensional semiconductor systems within a renormalized effective-mass approach
H.S. Brandi, A. Latgé, and L.E. Oliveira 561
Superlinear photoluminescence in GaAs/(GaAl)As heterojunctions
J.X. Shen, R. Pittini, and Y. Oka 563
The exciton dead layer revisited
M. Combescot, R. Combescot, and B. Roulet 565
Picosecond dynamics of polarized resonance photoluminescence in the GaAs/AlGaAs- superlattices
I.Ya. Gerlovin, Yu.K. Dolgikh, S.A. Eliseev, V.V. Ovsyankin, Yu.P. Efimov, I.V. Ignatiev, I.E. Kozin, V.V. Petrov, and Y. Masumoto 567
Magneto-photoreflectance of the above barrier state transitions in GaAs/Al_0.3Ga_0.7As double quantum wells
G. Sek, M. Nowaczyk, L. Bryja, K. Ryczko, J. Misiewicz, M. Bayer, J. Koeth, and A. Forchel 569
Indirect transitions between barrier (X) electrons and two-dimensional hole gas in mixed type I - type II quantum wells
R. Guliamov, E. Lifshitz, E. Cohen, A. Ron, and L.N. Pfeiffer 571
Electronic states of interface Al-2p core excitons in GaAs/AlAs/GaAs heterostructures
K. Inoue, Y. Ishiwata, and S. Shin 573
Enhancement of Fermi energy optical emission induced by the band structure in strained-layer InGaAs/InP quantum wells
H.A.P. Tudury, F. Iikawa, E. Ribeiro, J.A. Brum, W. Carvalho Jr., A.A. Bernussi, and A.L. Gobbi 575
Band offset determination and excitons in SiGe/Si (001) quantum wells
H-H. Cheng, S.T. Yen, and R.J. Nicholas 577
4.5 Nonlinear Optical Studies
Few-cycle THz spectroscopy of semiconductor quantum structures (invited)
K. Unterrainer, R. Bratschitsch, T. Müller, R. Kersting, J.N. Heyman, and G. Strasser 579
Extreme mid-infrared nonlinear optics in semiconductors
J. Kono, A.H. Chin, and O.G. Calderson 583
Fine structure of the amplified spontaneous emission of ZnSe laser structures
R. Heinecke, U. Neukirch, P. Michler, and J. Gutowski 585
Biexcitonic signatures in femtosecond pulse propagation
J. Meinertz, I. Gösling, U. Neukirch, and J. Gutowski 587
Femtosecond response times of large optical nonlinearity in low-temperature grown GaAs/AlAs multiple quantum wells
T. Okuno, Y. Masumoto, Y. Sakuma, M. Ito, and H. Okamoto 589
Asymmetric short-period GaAs/AlAs superlattices for observation of low-threshold laser effect
V.G. Litovchenko, D.V. Korbutyak, S.G. Krylyuk, A.I. Bercha, H.T. Grahn, and K.H. Ploog 591
Nonlocality induced size-enhancement of excitonic nonlinear response in high quality samples
H. Ishihara, K. Cho, K. Akiyama, N. Tomita, Y. Nomura, and T. Isu 593
Recombination mechanism of anti-Stokes photoluminescence in partially ordered GaInP-GaAs heterostructure
S.J. Xu, Q. Li, H. Wang, M.H. Xie, S.Y. Tong, and J.R. Dong 595
Spontaneous Raman scattering in GaP-AlGaP heterostructure waveguides
T. Saito, K. Suto, M. Kawasaki, T. Kimura, A. Watanabe, and J. Nishizawa 597
Generation mechanisms of coherent phonons in quantum wells revealed
K.J. Yee, Y.S. Lim, and D.S. Kim 599
4.6 Carrier Dynamics and Relaxation
Probing and controlling spin-relaxation in GaAs quantum wells (invited)
Y. Ohno, R. Terauchi, T. Adachi F. Matsukura, and H. Ohno 601
Speckle-averaged resonant Rayleigh scattering from quantum well excitons
G.R. Hayes, B. Deveaud, V. Savona and S. Haacke 605
Exciton and spin transport by surface acoustic waves in GaAs quantum wells
T. Sogawa, P.V. Santos, S.K. Zhang, S. Eshlaghi, A.D. Wieck, and K.H. Ploog 607
Coherent vs. incoherent emission in quantum wells studied by polarisation- and time-resolved spectroscopy
G. Aichmayr, L. Viña, S.P. Kennedy, R.T. Phillips, and K. Ploog 609
Ultrafast dynamics of holes in Si_1-xGe_x/Si multiple quantum wells
R.A. Kaindl, M. Wurm, K. Reimann, M. Woerner, T. Elsaesser, C. Miesner, K. Brunner, and G. Abstreiter 611
Mechanism of positively charged exciton spin relaxation in CdTe and CdMnTe quantum wells
E. Vanelle, P. Kossacki, J. Cibert, T. Amand, P. Renucci, X. Marie, and S. Tatarenko 613
Microscopic simulation of hot-carrier intersubband relaxation in quantum-cascade lasers
R.C. Iotti and F. Rossi 615
Reduction of Coulomb scattering in a GaAs/AlGaAs mesoscopic 2DEG disk
N. Suzumura, M. Yamaguchi, and N. Sawaki 617
Collective plasma response of interacting electrons localized in disordered GaAs/AlGaAs superlattices
Yu.A. Pusep, W. Fortunato, P.P. González-Borrero, A.I. Torpov, and J.C. Galzerani 619
Ultrafast relaxation dynamics of photoexcited carriers in an In_0.53Ga_0.47 As/InP multiple-quantum well
Y. Hamanaka, A. Nakamura, K. Tanase, R. Ohga, Y. Nonogaki, Y. Fujiwara, and Y. Takeda 621
Spin relaxation of negatively charged excitons in CdTe-based quantum wells
P. Kossacki, V. Ciulin, M. Kutrowski, J.-D. Ganière, T. Wojtowicz, and B. Deveaud 623
Kinetics of a low density system of indirect excitons in double quantum wells
V.I. Yudson 625
Photoexcitation-energy-dependent capture dynamics of excitons in electronically isolated GaAs quantum wells
K. Fujiwara, H.T. Grahn, L. Schrottke, and K.H. Ploog 627
Magnetic polaron dynamics at high excitation densities in Cd_1_x Mn_x Te/ZnTe multiple quantum wells
R. Pittini, J.X. Shen, M. Takahashi, and Y. Oka 629
Excitonic vs free-carrier spin-relaxation in III-V quantum wells
A. Malinowski, P.A. Marsden, R.S. Britton, K. Puech, A.C. Tropper, and R.T. Harley 631
1S-2S-continuum coupling and dephasing in 5 nm GaAs quantum wells
A.A. Busch, J.M. Watson, P. Paddon, Z. Wasilewski, and J.F. Young 633
Electric-field-dependent carrier dynamics in an (Al,Ga)As/GaAs double-quantum-well superlattice
L. Schrottke, R. Hey, and H.T. Grahn 635
Direct and indirect radiative recombination in strongly excited ZnSe/BeTe superlattices
A.A. Maksimov, S.V. Zaitsev, I.I. Tartakovskii, V.D. Kulakovskii, N.A. Gippius, D.R. Yakovlev, W. Ossau, G. Reuscher, A. Waag, and G. Landwehr 637
Radiative recombination and spin relaxation of excitons in Cd_1-x Mn_x Te quantum wells
M.C. Debnath, J.X. Shen, I. Souma, R. Pittini, and Y. Oka 639
Nonequilibrium electrons in double quantum well structures: Boltzmann equation approach
S. Khan-ngern and I.A. Larkin 641
Direct study of spin relaxation processes in 2D ZnCdSe/ZnSe systems through time resolved measurements of polarized exciton emission
S. Permogorov, Y. Oka, R. Pittini, J.X. Shen, K. Kayanuma, A. Reznitsky, L. Tenishev, and S. Verbin 643
4.7 Microcavities
Mixed neutral and negatively charged microcavity polaritons (invited)
R. Rapaport, E. Cohen, A. Ron, E. Linder, R. de Picciotto, R. Harel, and L.N. Pfeiffer 645
Confined optical modes in photonic molecules and crystals (invited)
M. Bayer, A. Forchel, T. L. Reinecke, and P.A. Knipp 649
Non-linear spin polarization dynamics in semiconductor microcavities
P. Renucci, X. Marie, T. Amand, M. Paillard, P. Senellart, and J. Bloch 653
Optically pumped quantum dot lasers using high-Q microdisk cavities
P. Michler, A. Kiraz, C. Becher, Lidong Zhang, E. Hu, A. Imamoglu, W.V. Schoenfeld, P.M. Petroff 655
Incoherent amplification phenomena in semiconductor microcavities
G. Dasbach, T. Baars, M. Bayer, A. Larionov, and A. Forchel 657
Selectively in situ probing of self-assembled InGaAs quantum dots in a planar GaAs microcavity by angle-resolved detection of photoluminescence spectrum
J.H. Chen, J.H. Zhao, F.H. Yang, P.H. Tan, J.D. Zhang, Y.P. Zeng, J.Q. You, and H.Z. Zheng 659
Spin quantum beats of exciton-polariton in semiconductor microcavities
P. Renucci, X. Marie, T. Amand, M. Paillard, and E. Vanelle 661
Observation of enhanced spontaneous emission coupling factor in blue InGaN microcavities
S. Kako, T. Someya, and Y. Arakawa 663
Ballistic transport of exciton-polaritons in a graded quantum microcavity
B. Sermage, G. Malpuech, A. Kavokin, and V. Thierry-Mieg 665
Ultrafast polarization switching in a CdTe microcavity
M.D. Martín, H. Davies, L. Viña, and R. André 667
Cavity QED of quantum dots embedded in dielectric microspheres
H. Wang, X. Fan, and M. Lonergan 669
Polarization of magnetopolaritons in a semiconductor microcavity
M.D. Martín, S. Burgas, M. Alonso, L. Viña, F.J. Terán, M. Potemski, and E.E. Mendez 671
Rabi splitting enhancement in planar semiconductor microcavities
A. D'Andrea and L. Pilozzi 673
Luminescence properties of CdS quantum dots embedded in monolithic II-VI microcavity
T. Tawara, H. Yoshida, H. Kumano, S. Tanaka, and I. Suemune 675
Strongly detuned IV-VI microcavity and microdisk resonances: mode splitting and lasing
T. Schwarzl, W. Heiss, G. Springholz, S. Gianordoli, G. Strasser, M. Aigle, and H. Pascher 677
Bottleneck and resonant enhancement in free electron - cavity polaritons scattering in GaAs/AlGaAs microcavities
R. Rapaport, A. Qarry, E. Cohen, A. Ron, E. Linder, and L.N. Pfeiffer 679
Biexcitons or bipolaritons in a semiconductor microcavity?
P. Borri, W. Langbein, U. Woggon, J.R. Jensen, and J.M. Hvam 681
Theory of microcavity resonant Rayleigh scattering
D.M. Whittaker 683
Spatially extended cavity polaritons arising from weakly confined excitons
H. Ishihara and J. Kishimoto 685
Stimulation of polariton emission in a homogeneously broadened semiconductor microcavity
V. Mizeikis, J. Erland, J.R. Jensen, N.A. Mortensen, and J.M. Hvam 687
Bloch oscillations of light in laterally confined Bragg mirrors and multiple coupled microcavities
G. Malpuech, A. Kavokin, A. Di Carlo, P. Lugli, and G. Panzarini 689
Enhanced light transmission through nano-structured surfaces
S. Meinlschmidt, R. Windisch, A. Knobloch, P. Kiesel, P. Heremans, and G.H. Döhler 691
Optically pumped lasing at 1.3 mu m of GaInNAs-based VCSEL structures
M. Hetterich, M.D. Dawson, A.Yu. Egorov, and H. Riechert 693
The interaction between exciton states near the quantum well bandgap and confined photons in GaAs/AlAs microcavities
A. Qarry, R. Rapaport, E. Cohen, A. Ron, E. Linder, and L.N. Pfeiffer 695
Resonant Raman scattering in an InAs/GaAs monolayer structure
J. Maultzsch, S. Reich, A.R. Goñi, and C. Thomsen 697
Light-exciton coupling in semiconductor microcavities of cylindrical and spherical symmetry
R.A. Abram, S. Brand, M.A. Kaliteevski, V.V. Nikolaev, M.V. Maximov, N.N. Ledentsov, C.M. Sotomayor Torres, und A.V. Kavokin 699
4.8 Near-Field Studies
Near-field spectroscopy of delocalized excitons in single quantum wires
F. Intonti, V. Emiliani, Ch. Lienau, T. Elsaesser, R. Nötzel, and K.H. Ploog 701
Scanning near-field optical spectroscopy of buried semiconductor heterostructures
M. Hauert, R. Roshan, A.C. Maciel, J. Kim, J.F. Ryan, A. Schwarz, A. Kaluza, Th. Schäpers, and H. Lüth 703
Hints for a Non-thermal distribution of excitons in CdSe/ZnSe quantum islands
G. von Freymann, E. Kurtz, C. Klingshirn, Th. Schimmel, and M. Wegener 705
4.9 Intersubband Transitions
Quantum optics and the observation of electromagnetically induced transparency with QW subbands (invited)
C.C. Phillips, E. Paspalakis, G.B. Serapiglia, C. Sirtori, and K.L. Vodopyanov 707
Towards quantum well hot hole lasers
P. Kinsler and W.Th. Wenckebach 711
Character of electronic excitations in GaAs-AlGaAs quantum structures
E. Ulrichs, C. Steinebach, C. Schüller, Ch. Heyn, W. Hansen, and D. Heitmann 713
Correlation of vertical transport and infrared absorption in GaAs/AlGaAs superlattices
M. Helm and G. Strasser 715
Influence of in-plane magnetic field on cyclotron resonance in double-layer two dimensional electron system
H. Aikawa, S. Takaoka, A. Kuriyama, K. Oto, K. Murase, S. Shimomura, S. Hiyamizu, T. Jungwirth, and L. Smrcka 717
Circular photogalvanic effect in p-GaAs/AlGaAs MQW
S.D. Ganichev, E.L. Ivchenko, H. Ketterl, L.E. Vorobjev, M. Bichler, W. Wegscheider, and W. Prettl 719
Cascading effect in type-II InAs/GaSb/AlSb intersubband light emitter
K. Ohtani, H. Sakuma, and H. Ohno 721
Magneto-optical transitions involving a 2DEG confined in Cd(Mn)Te/CdMgTe quantum wells
F.J. Teran, M.L. Sadowski, M. Potemski, P. Kossacki, P. Hawrylak, and G. Karczewski 723
Comparison of intersubband relaxation times in GaN/AlGaN and in InGaAs/AlGaAs quantum wells
T. Asano, S. Yoshizawa, S. Noda, N. Iizuka, K. Kaneko, N. Suzuki, and O. Wada 725
Electronic inelastic light scattering in a periodic delta-doping GaAs multiple quantum well structure
C. Kristukat, A.R. Goñi, S. Rutzinger, W. Wegscheider, G. Abstreiter, and C. Thomsen 727
Intersubband electroluminescence using X-Gamma carrier injection in a GaAs/AlAs double-quantum-well super-lattice
C. Domoto, N. Ohtani, K. Kuroyanagi, P.O. Vaccaro, T. Nishimura, H. Takeuchi and M. Nakayama 729
Hot electron optical phenomena in GaAs/AlAs MQW structures in strong lateral electric field
L.E. Vorobjev, S.N. Danilov, I.E. Titkov, D.A. Firsov, V.A. Shalygin, A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, V.Ya. Aleshkin, A.A. Andronov, E.V. Demidov, and Z.F. Krasilnik 731
Novel mid-infrared laser designs based on intraband and interband carrier transitions in quantum wells
L.E. Vornbjev, D.A. Firsov, G.G. Zegrya, V.L. Zerova, E. Towe, J.W. Cockburn, and Z.F. Krasil'nik 733
5. Heterostructures and Superlattices: Transport
5.1 Transport, Magneto-Transport, and Coherent Effects
Is there a true metallic state in two dimensions? (invited)
M.Y. Simmons, A.R. Hamilton, M. Pepper, E.H. Linfield, P.D. Rose, and D.A. Ritchie 735
Self-induced Shapiro effect in semiconductor superlattices
F. Löser, M.M. Dignam, Yu. A. Kosevich, K. Köhler, and K. Leo 739
Effects of a parallel magnetic field on the novel metallic behavior in two dimensions
K. Eng, X.G. Feng, D. Popovic, and S. Washburn 741
Optics with ballistic electrons: Anti-reflection coatings for GaAs-AlGaAs superlattices
C. Pacher, G. Strasser, E. Gornik, F. Elsholz, A. Wacker, and E. Schöll 743
Chaotic quantum transport in superlattices
T.M. Fromhold, A.A. Krokhin, A.E. Belyaev, C.R. Tench, S. Bujkiewicz, P.B. Wilkinson, F.W. Sheard, L. Eaves, and M. Henini 745
The magnetoresistance of a two-dimensional electron gas in the presence of a spatially random magnetic field
A.W. Rushforth, B.L. Gallagher, P.C. Main, C.H. Marrows, B.J. Hickey, E.D. Dahlberg, A.C. Neumann, and M. Henini 747
Giant negative magnetoresistance in two-dimensional antidot arrays: ballistic orbital effect and ballistic weak localization
T. Osada, H. Nakamura, and Y. Shiraki 749
Correlation of optical and transport properties of (AlGa)As/GaAs heterostructures
L. Gottwaldt, F.J. Ahlers, E.O. Göbel, G. Hein, S. Nau, K. Pierz, and W. Stolz 751
A method of determining potential barrier heights at semiconductor heterointerfaces
G.-H. Kirn, H.-S. Sim, M.Y. Simmons, D.A. Ritchie, C.-T. Liang, A.C. Churchill, and W.S. Han 753
Conductance quantization in an array of ballistic constrictions
S. de Haan, A. Lorke, J.P. Kotthaus, W. Wegscheider, and M. Bichler 755
Transport in asymmetric two-dimensional lateral surface superlattices
S. Chowdhury, A.R. Long, J.H. Davies, D.E. Grant, E. Skuras, and C.J. Emeleus 757
Suppression of miniband transport in magnetic field: role of injection process
A.A. Krokhin, A.E. Belyaev, T.M. Fromhold, C.R. Tench, H.M. Murphy, S. Bujkiewicz, P.B. Wilkinson, F.W. Sheard, L. Eaves, and M. Henini 759
Quantitative evaluation of electron-electron scattering rate in two-dimensional electron gas by magnetic lateral superlattice
M. Kato, A. Endo, M. Sakairi, M. Hara, S. Katsumoto, and Y. Iye 761
Shubnikov-de Haas effect with several filled subbands
U. Ekenberg 763
On the origin of beat patterns in the quantum magneto-resistance of gated InAs/GaSb and InAs/AlSb quantum wells
A.C.H. Rowe, R.S. Ferguson, and R.A. Stradling 765
Rashba spin splitting in 2D electron and hole systems: Implications for the metal-insulator transition
R. Winkler 767
Weak localization in periodically modulated magnetic field
Y. Blum, A. Tsukernik, A. Palevski, T.A. Shutenko, B.L. Altshuler, I.L. Aleiner, A. Rudra, and E. Kapon 769
Intrinsic mobility limits in polarization induced two-dimensional electron gases
D. Jena, Y.P. Smorchkova, C.R. Elsass, A.C. Gossard, and U.K. Mishra 771
Combined S- and Z-shaped current bistability induced by charging of quantum dots
A.E. Belyaev, L. Eaves, S.A. Vitusevich, P.C. Main, M. Henini, A. Förster, N. Klein, and S.V. Danylyuk 773
Interaction of Mu with spin current in GaAs/GaAsP/Si
E. Torikai, Y. Ikedo, A. Ihori, K. Shimomura, K. Nagamine, T. Saka, and T. Kato 775
Metallic behaviour and temperature dependent screening in p-SiGe
V. Senz, T. Ihn, T. Heinzel, K. Ensslin, G. Dehlinger, U. Gennser, and D. Gruetzmacher 777
Anisotropic magneto-transport properties of 70 nm-period lateral surface superlattices in high magnetic fields
M. Akabori, J. Motohisa, and T. Fukui 779
Thermopower of a two-dimensional antidot lattice
A.G. Pogosov, M.V. Budantsev, A.E. Plotnikov, A.K. Bakarov, and A.I. Toropov 781
Magnetotransport in two-dimensional lateral superlattices in strongly coupled electron-hole gases
B. Kardynal, R.J. Nicholas, J. Rehman, K. Takashina, and N.J. Mason 783
Semiclassical origin of the 2D metallic state in high mobility Si-MOS and Si/SiGe structures
G. Brunthaler, A. Prinz, G. Pillwein, G. Bauer, K. Brunner, G. Abstreiter, T. Dietl, and V.M. Pudalov 785
Zero-bias conductance anomaly in GaAs/AlGaAs modulation doped field-effect transistors
S. Skaberna, U. Kunze, D. Reuter, and A.D. Wieck 787
Magnetotransport and capacitance investigations of strongly coupled but spatially separated 2D electron and hole systems
M. Pohlt, M. Lynass, W. Dietsche, K. von Klitzing, K. Eberl, and R. Mühle 789
First principles study of spin-electronics: Zero-field spin-splitting in superlattices
J.A. Majewski, P. Vogl, and P. Lugli 791
A comparative study of 'metallic' and 'insulating' behaviour of the two-dimensional electron gas on (100) and vicinal surfaces of Si MOSFET
S.H. Roshko, S.S. Safonov, A.K. Savchenko, A.G. Pogosov, and Z.D. Kvon 793
The role of surface-localized states in the in-plane transport properties of superlattices
A.B. Henriques 795
High-mobility heterostructure as a new kind of chaotic billiards
L.D. Shvartsman 797
Gate-controlled very large spontaneous spin-splittings in normal In_0.75Ga_0.25As/In_0.75Al_0.25As heterojunctions grown on GaAs substrates
S. Yamada, Y. Sato, S. Gozu, and T. Kikutani 799
Field domains in semiconductor superlattices: Dynamic scenarios of multistable switching
A. Amann, A. Wacker, L.L. Bonilla, and E. Schöll 801
Angular dependent magnetoresistance oscillations in semiconductor superlattice with incoherent interlayer coupling
M. Kuraguchi, E. Ohmichi, T. Osada, and Y. Shiraki 803
Optical and transport properties of modulation doped InAs/GaAs superlattices
V.A. Kulbachinskii, R.A. Lunin, V.G. Kytin, A.V. Golikov, V.A. Rogozin, V.G. Mokerov, Yu.V. Fedorov, und A.V. Hook 805
Weak localization effects in a wide parabolic quantum well
N.M. Sotomayor, G.M. Gusev, J.R. Leite, N.T. Moshegov, and A.I. Toropov 807
Magnetotransport properties of multisubband semiconductor structures
N.S. Averkiev, L.E. Golub, S.A. Tarasenko, and M. Willander 809
Effect of buffer layer thickness on improvement of modulation doped CdTe/CdMgTe heterostructures grown on GaAs substrate
D. Wasik, M. Baj, L. Dmowski, J. Siwiec-Matuszyk, J. Przybytek, E. Janik, T. Wojtowicz, and G. Karczewski 811
Domain formation in a one-dimensional superlattice with phonon scattering
L.G. Mourokh, A.Yu. Smirnov, N.J.M. Horing, and V.I. Gavrilenko 813
Asymmetric carrier diffusion and phonon-wind-driven transport in an InGaAs-InP quantum well
A.F.G. Monte, S.W. da Silva, P.C. Morais, J.M.R. Cruz, and A.S. Chaves 815
5.2 Magnetic Superlattices
Nonzero Hall resistance in a spatially fluctuating magnetic field with zero mean
A.A. Bykov, G.M. Gusev, J.R. Leite, A.K. Bakarov, N.T. Moshegov, D.K. Maude, M. Casse, and J.C. Portal 817
5.3 Tunneling and Resonant Tunneling
Optical detection of ballistically injected electrons in III/V heterostructures
M. Kemerink, K. Sauthoff, P.M. Koenraad, J.W. Gerritsen, H. van Kempen, and J.H. Wolter 819
Electron tunneling time between double quantum dot
A. Tackeuchi, Y. Nakata, T. Kuroda, K. Mase, and N. Yokoyama 821
Direct measurement of the AlAs X-band Fermi surface
H.-S. Im, L.E. Bremme, P.C. Klipstein, A.V. Kornilov, R. Grey, and G. Hill 823
Miniband transport and Stark-cyclotron-resonance in InAs/GaSb superlattices
V.J. Hales, R.J. Nicholas, and N.J. Mason 825
Effective mass anisotropy of Gamma-electrons in GaAs/AlGaAs quantum wells due to interface band mixing
T. Reker, H. Im, H. Choi, L.E. Bremme, Y.C. Chung, R. Grey, G. Hill, and P.C. Klipstein 827
Vertical transport and interband luminescence in type II InAs/GaSb/InAs heterostructures
M. Roberts, N.J. Mason, S.G. Lyapin, Y.C. Chung, and P.C. Klipstein 829
Resonant tunneling of holes under in-plane uniaxial stress
Y.C. Chung, T. Reker, L.E. Bremme, R. Grey, and P.C. Klipstein 831
Resonant tunneling through zerodimensional impurity states: Effects of a finite temperature
P. König, U. Zeitler, J. Könemann, T. Schmidt, and R.J. Haug 833
Temperature dependence of resonant tunneling characteristics in a p-type GaAs/AlAs double-barrier structure
M. Ono, N. Nishioka, M. Morifuji, and C. Hamaguchi 835
Negative differential resistance and current self-oscillation in doped GaAs/AlAs superlattices
J.N. Wang, C.Y. Li, X.R. Wang, B.Q. Sun, Y.Q. Wang, W.K. Ge, D.S. Jiang, and Y.P. Zeng 837
Photocurrent self-oscillations in weakly coupled, type-II GaAs/AlAs superlattices embedded in p-i-n and n-i-n diodes
N. Ohtani, M. Rogozia, C. Domoto, T. Nishimura, and H.T. Grahn 839
Zener-phonon resonances in the quantum transport of multiband semiconductor superlattices
P. Kleinert 841
Correlation between a remote electron and a two-dimensional electron gas in resonant tunneling devices
H. Kato and F.M. Peeters 843
Spin effects in InAs quantum dots: Tunneling experiments in tilted magnetic fields
J.M. Meyer, I. Hapke-Wurst, U. Zeitler, R.J. Haug, H. Frahm, A.G.M. Jansen, and K. Pierz 845
Carrier transport affected by hole-subband resonances in a strained GaAs/InAlAs superlattice
M. Hosoda, K. Kuroyanagi, N. Ohtani, and T. Aida 847
Disorder-enhanced tunneling transport through doping barriers
R. Elpelt, O. Wolst, H. Willenberg, S. Malzer, and G.H. Döhler 849
Response time of the double-barrier heterostructures with resonant tunneling
M.N. Feiginov 851
Current self-oscillations with discrete frequencies in weakly coupled semiconductor superlattices
M. Rogozia, H.T. Grahn, and R. Hey 853
Observation of the scattered electrons in the resonant tunneling regime using a three-terminal quantum-well heterostructure
G.-G. Kim, D.-W. Roh, S.-W. Paek, K.-M. Koh, K.E. Pyun, and C.-H. Kim 855
5.4 Hopping, Localization
Nature of the localized phase in a two-dimensional electron system
I.E. Itskewich, R.J.A. Hill, S.T. Stoddart, H.M. Murphy, A.S.G. Thornton, P.C. Main, L. Eaves, M. Henini, D.K. Maude, and J.C. Portal 857
Evidence for screening breakdown near the metal-to-insulator transition in two dimensions
W. Jantsch, Z. Wilamowski, N. Sandersfeld, and F. Schäffer 859
Coulomb interaction and density of states in amorphous Si_xGe_1-x films
K. Nakada, K. Nara, N. Aoki, and Y. Ochiai 861
Studies of localization in an interacting two-electron system
J. Talamantes, M. Pollak, and I. Varga 863
5.5 Phonons, Plasmons
Bridging the gap with cleaved edge overgrowth superlattices: on minigaps, magnetic breakdown and quantum interference in artificial bandstructures (invited)
R.A. Deutschmann, W. Wegscheider, C. Albrecht, J.H. Smet, M. Rother, M. Bichler, and G. Abstreiter 865
Electron wires driven by a surface acoustic wave and nonlinear acoustoelectric interactions in quantum wells
A.O. Govorov A.V. Kalameitsev, V.M. Kovalev, H.-J. Kutschera, M. Streibl, M. Rotter, and A. Wixforth 869
Generation and detection of picosecond acoustic phonon pulses in a double quantum well structure
I. Ishii, O. Matsuda, T. Fukui, J.J. Baumberg, and O.B. Wright 871
Amplification and generation of high-frequency coherent acoustic phonons under the drift of 2D-electrons
M.A. Stroscio, S.M. Komirenko, K.W. Kim, A.A. Demidenko, and V.A. Kochelap 873
Observation of a two-dimensional plasmon in a metallic monolayer on silicon surface
T. Nagao, T. Hildebrandt, M. Henzler and S. Hasegawa 875
First-and second-order Raman spectroscopy of ^70 Ge_n/^76 Ge_n isotope superlattices
K. Morita, K.M. Itoh, M. Nakajima, H. Harima, K. Mizoguchi, Y. Shiraki, and E.E. Haller 877
Raman scattering in Ge quantum dot superlattices
A. Milekhin, N. Stepina, A. Yakimov, A. Nikiforov, S. Schulze, T. Kampen, and D.R.T. Zahn 879
Plasmon-phonon coupled mode excitation in a hot 2DEG observed by a phonon pulse technique
J.K. Wigmore, H.A. Al Jawhari, A.G. Kozorezov, and M. Sahraoui-Tahar 881
Peculiarities of phonons in strained short-period GaN/AlN superlattices: A first-principles study
J.-M. Wagner and F. Bechstedt 883
5.6 High-frequency Transport, Microwaves, Noise, Short Pulses
Study of ambipolar diffusion and drift of spatially separated charge carriers
M. Beck, M. Vitzethum, D. Streb, P. Kiesel, C. Metzner, S. Malzer, and G.H. Döhler 885
Localization of carriers and Bloch oscillations in quantum dot superlattices in dc electric field
R.A. Suris and I.A. Dmitriev 887
A novel quantum transport mechanism in biased quantum-box superlattices under terahertz irradiation
P. Kleinert und V.V. Bryksin 889
On the spectra of field and current oscillations due to laser irradiation in superlattices
Yu.A. Romanov and Ju.Yu. Romanova 891
END