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Strain-Induced Effects in Advanced MOSFETs

  • Book
  • © 2011

Overview

Authors:
  1. Viktor Sverdlov

    1. , Institute for Microelectronics, Technical University Vienna, Vienna, Austria

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  • comprehensive overview of strain techniques
  • accurate description of strain induced modifications of the valence and conduction bands
  • overview of transport modeling in strain devices
  • Includes supplementary material: sn.pub/extras

Part of the book series: Computational Microelectronics (COMPUTATIONAL)

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Table of contents (12 chapters)

  1. Front Matter

    Pages i-xiv
    Download chapter PDF

  2. Introduction

    • Viktor Sverdlov
    Pages 1-3

  3. Scaling, Power Consumption, and Mobility Enhancement Techniques

    • Viktor Sverdlov
    Pages 5-22

  4. Strain and Stress

    • Viktor Sverdlov
    Pages 23-34

  5. Basic Properties of the Silicon Lattice

    • Viktor Sverdlov
    Pages 35-44

  6. Band Structure of Relaxed Silicon

    • Viktor Sverdlov
    Pages 45-62

  7. Perturbative Methods for Band Structure Calculations in Silicon

    • Viktor Sverdlov
    Pages 63-81

  8. Strain Effects on the Silicon Crystal Structure

    • Viktor Sverdlov
    Pages 83-90

  9. Strain Effects on the Silicon Band Structure

    • Viktor Sverdlov
    Pages 91-103

  10. Strain Effects on the Conduction Band of Silicon

    • Viktor Sverdlov
    Pages 105-121

  11. Electron Subbands in Silicon in the Effective Mass Approximation

    • Viktor Sverdlov
    Pages 123-129

  12. Electron Subbands in Thin Silicon Films

    • Viktor Sverdlov
    Pages 131-167

  13. Demands of Transport Modeling in Advanced MOSFETs

    • Viktor Sverdlov
    Pages 169-237

  14. Back Matter

    Pages 239-252
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Keywords

About this book

Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.

Authors and Affiliations

  • , Institute for Microelectronics, Technical University Vienna, Vienna, Austria

    Viktor Sverdlov

Bibliographic Information

  • Book Title: Strain-Induced Effects in Advanced MOSFETs

  • Authors: Viktor Sverdlov

  • Series Title: Computational Microelectronics

  • DOI: https://doi.org/10.1007/978-3-7091-0382-1

  • Publisher: Springer Vienna

  • eBook Packages: Engineering, Engineering (R0)

  • Copyright Information: Springer-Verlag/Wien 2011

  • Hardcover ISBN: 978-3-7091-0381-4Published: 24 November 2010

  • Softcover ISBN: 978-3-7091-1933-4Published: 23 August 2016

  • eBook ISBN: 978-3-7091-0382-1Published: 06 January 2011

  • Series ISSN: 0179-0307

  • Edition Number: 1

  • Number of Pages: XIV, 252

  • Topics: Electronics and Microelectronics, Instrumentation

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