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Physics and Mechanics of New Materials and Their Applications

Proceedings of the International Conference PHENMA 2021-2022

  • Conference proceedings
  • © 2023

Overview

  • Provides original and up-to-date contributions on manufacturing techniques
  • Helps readers to better understand modern research and development requirements for advanced materials
  • Presents original theoretical, experimental, and modeling results on novel materials and devices

Part of the book series: Springer Proceedings in Materials (SPM, volume 20)

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Table of contents (50 papers)

  1. Processing Techniques of Advanced Materials

  2. Physics of Advanced Materials

Keywords

About this book

This book presents 50 selected peer-reviewed contributions from the 10th Anniversary International Conference on “Physics and Mechanics of New Materials and Their Applications”, PHENMA 2021-2022 (23-27 May, 2022, Divnomorsk, Russia), focusing on processing techniques, physics, mechanics, and applications of advanced materials. The book describes a broad spectrum of promising nanostructures, crystal structures, materials, and composites with unique properties. It presents nanotechnological design approaches, environmental-friendly processing techniques, and physicochemical as well as mechanical studies of advanced materials. The selected contributions describe recent progress in computational materials science methods and algorithms (in particular, finite-element and finite-difference modelling) applied to various technological, mechanical, and physical problems. The presented results are important for ongoing efforts concerning the theory, modelling, and testing of advanced materials. Other results are devoted to promising devices with higher accuracy, increased longevity, and greater potential to work effectively under critical temperatures, high pressure, and in aggressive environments.

Editors and Affiliations

  • I. I. Vorovich Institute of Mathematics, Mechanics and Computer Science, Southern Federal University, Rostov-on-Don, Russia

    Ivan A. Parinov

  • Department of Microelectronic Engineering, National Kaohsiung University of Science and Technology, Kaohsiung, Taiwan

    Shun-Hsyung Chang

  • Don State Technical University, Rostov-on-Don, Russia

    Arkady N. Soloviev

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