Buy print copy
Tax calculation will be finalised at checkout
About this book
The present volume of this series, following the tradition of the previous volumes, covers three major lines of research on crystallization: growth from vapor and epitaxy, growth from solution, and growth from melt. As in the previous volumes, preference is given to papers that provide original results and reviews of results obtained by the authors and those from published sources, although some of the papers are either purely original or purely of review character. The first section deals with crystal growth from vapor and epitaxy and contains three papers. One of them, on artificial epitaxy, discusses and reviews published results from the last three years in this rapidly developing area. The results are used in outlining mechanisms for oriented film growth on amorphous substrates. Another paper in this section deals with classical epitaxy, namely oriented growth on single-crystal substrates, where some important conclusions are drawn from the growth of gallium nitride films on sapphire, which concern the orientation relationships in that pair of substances. The last paper in the section deals with film growth under ion bombardment (the corresponding techniques in film crystallization have already advanced from theory to practical applications).
Bibliographic Information
Book Title: Growth of Crystals
Editors: E.I. Givargizov, S.A. Grinberg
Series Title: Growth of Crystals
Publisher: Springer New York, NY
-
eBook Packages: Springer Book Archive
Copyright Information: Consultants Bureau, New York 1988
Softcover ISBN: 978-1-4615-7127-8Published: 07 May 2012
Edition Number: 1
Number of Pages: 238
Number of Illustrations: 126 b/w illustrations