Overview
- Provides the basic physics behind the modeling and evaluation techniques used in silicon materials science
- Presents atomistic insight into the defects and the impurities in silicon materials such as ULSI, photonic crystals, solar cells, power devices, and nanostructure devices
- Includes tutorials in silicon materials science by the top scientists in this research field
- Encourages and helps to prepare young researchers and technicians for the time when there is a generation change in this field
Part of the book series: Lecture Notes in Physics (LNP, volume 916)
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Table of contents (9 chapters)
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Front Matter
Keywords
- Atomistic Insights into Defects and Impurities
- Atomistic Scale Modeling Techniques
- Computer Simulation of Crystal Growth
- Defect Engineering in Silicon Materials
- Density Functional Theory
- Electron Beam Induced Current Characterization
- Silicon Defect Analysis
- Silicon Imprriies Analysis
- Solar Grade Si Wafers
- The Physical Principles of Semiconductor Devices
About this book
The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.
Editors and Affiliations
About the editors
Since 2004 Yutaka Yoshida is professor in Materials and Bio Science at Shizuoka Institute of Science and Technology (SIST) Japan. He is also the director of SIST Advanced instrumental analysis center. After obtaining his doctoral degree from Osaka University under the guidance of emeritus Professor F.E. Fujita, and he stayed in the group of Professor Gero Vogl as a guest scientist at the Hahn-Meitner Institute Berlin, Germany, in the period between 1983 and 1985, and 1990, and also as a research assistant at the Institute of solid state physics, Universität Wien, Austria, between 1986 and 1989.
Since 1993 he is a guest Scientist at the RIKEN, Japan. He served for the chairperson of ICAME 2011 at Kobe and also will be the chairperson for 7th Forum of Science and Technology of Silicon Materials 2014 (Hamamatsu).
Prof.Guido Langouche
Since 2010 Guido Langouche is emeritus professor in nuclear solid state physics at the
University of Leuven. After obtaining his doctoral and habilitation degrees from K.U. Leuven, he was post-doc at the universities of Stanford and Groningen and guest professor at the universities of Osaka, Lyon and Kinshasa. From 1995 till 2005 he was vice-rector of K.U. Leuven. From 2005 till 2010 he was chairman of the Coimbra Group, an academic collaboration network of 40 of Europe’s longest-established research-intensive universities. He was also vice-president of NVAO, the Accreditation Agency for the Netherlands and Flanders, residing in The Hague, where he was appointed in 2007 jointly by the Dutch and Flemish Ministers of Education. Since 2011 he is also Secretary of INQAAHE, the International Network for Quality Assurance Agencies in Higher Education.
He is editor-in-chief of the Hyperfine Interactions journal.
Bibliographic Information
Book Title: Defects and Impurities in Silicon Materials
Book Subtitle: An Introduction to Atomic-Level Silicon Engineering
Editors: Yutaka Yoshida, Guido Langouche
Series Title: Lecture Notes in Physics
DOI: https://doi.org/10.1007/978-4-431-55800-2
Publisher: Springer Tokyo
eBook Packages: Physics and Astronomy, Physics and Astronomy (R0)
Copyright Information: Springer Japan 2015
Softcover ISBN: 978-4-431-55799-9Published: 31 March 2016
eBook ISBN: 978-4-431-55800-2Published: 30 March 2016
Series ISSN: 0075-8450
Series E-ISSN: 1616-6361
Edition Number: 1
Number of Pages: XV, 487
Number of Illustrations: 112 b/w illustrations, 180 illustrations in colour
Topics: Semiconductors, Nanotechnology, Materials Engineering, Nanotechnology and Microengineering, Solid State Physics, Nanoscale Science and Technology