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Multiscale Modeling in Epitaxial Growth

  • Conference proceedings
  • © 2005

Overview

Editors:
  1. Axel Voigt

    1. Crystal Growth group, research center caesar, Bonn, Germany

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  • Proceedings of an Oberwolfach Conference, suggested by K.-H. Hoffmann
  • First available overview of highly active research field in modeling epitaxial growth
  • Introduction given to kinetic Monte Carlo, step flow and continuum methods
  • State-of-the-art in multiscale simulations in epitaxial growth
  • Can be used as an introduction for graduate students in applied math, theoretical physics and computational materials science

Part of the book series: International Series of Numerical Mathematics (ISNM, volume 149)

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Table of contents (14 papers)

  1. Front Matter

    Pages i-viii
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  2. Atomistic Models

    1. Lattice Gas Models and Kinetic Monte Carlo Simulations of Epitaxial Growth

      • Michael Biehl
      Pages 3-18

    2. Cluster Diffusion and Island Formation on fcc(111) Metal Surfaces Studied by Atomic Scale Computer Simulations

      • Karsten Albe, Michael Müller
      Pages 19-28

    3. A Multiscale Study of the Epitaxial CVD of Si from Chlorosilanes

      • Carlo Cavallotti, Davide Moscatelli, Alessandro Veneroni
      Pages 29-39

    4. Off-lattice Kinetic Monte Carlo Simulations of Strained Heteroepitaxial Growth

      • Michael Biehl, Florian Much, Christian Vey
      Pages 41-56

    5. Quasicontinuum Monte Carlo Simulation of Multilayer Surface Growth

      • Jason P. DeVita, Leonard M. Sander, Peter Smereka
      Pages 57-66

  3. Step Flow Models

    1. Introduction to Step Dynamics and Step Instabilities

      • Joachim Krug
      Pages 69-95

    2. A Finite Element Framework for Burton-Cabrera-Frank Equation

      • Frank Haußer, Axel Voigt
      Pages 97-114

    3. Edge Diffusion in Phase-Field Models for Epitaxial Growth

      • Andreas Rätz, Axel Voigt
      Pages 115-125

    4. Discretisation and Numerical Tests of a Diffuse-Interface Model with Ehrlich-Schwoebel Barrier

      • Felix Otto, Patrick Penzler, Tobias Rump
      Pages 127-158

    5. Islands in the Stream: Electromigration-Driven Shape Evolution with Crystal Anisotropy

      • Philipp Kuhn, Joachim Krug
      Pages 159-173

    6. Simulation of Ostwald Ripening in Homoepitaxy

      • Frank Haußer, Axel Voigt
      Pages 175-192

  4. Continuum Models

    1. Continuum Models for Surface Growth

      • Martin Rost
      Pages 195-208

    2. Configurational Continuum Modelling of Crystalline Surface Evolution

      • Navot Israeli, Daniel Kandel
      Pages 209-225

    3. On Level Set Formulations for Anisotropic Mean Curvature Flow and Surface Diffusion

      • Ulrich Clarenz, Frank Haußer, Martin Rumpf, Axel Voigt, Ulrich Weikard
      Pages 227-237
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Keywords

About this book

Epitaxy is a very active area of theoretical research since several years. It is experimentally well-explored and technologically relevant for thin film growth. Recently powerful numerical techniques in combination with a deep understanding of the physical and chemical phenomena during the growth process offer the possibility to link atomistic effects at the surface to the macroscopic morphology of the film. The goal of this book is to summarize recent developments in this field, with emphasis on multiscale approaches and numerical methods. It covers atomistic, step-flow, and continuum models and provides a compact overview of these approaches. It also serves as an introduction into this highly active interdisciplinary field of research for applied mathematicians, theoretical physicists and computational materials scientists.

Editors and Affiliations

  • Crystal Growth group, research center caesar, Bonn, Germany

    Axel Voigt

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