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Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon

  • Book
  • © 2004

Overview

Authors:
  1. Peter Pichler

    1. Fraunhofer Institut für Integrierte Systeme und Bauelementetechnologie (IISB), Erlangen, Germany

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  • First comprehensive review of intrinsic point defects and impurities in silicon
  • Compiles all known information about structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behavior of intrinsic point defects, acceptor and donor impurities, isovalent impurities, chalcogens, and halogens

Part of the book series: Computational Microelectronics (COMPUTATIONAL)

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Table of contents (7 chapters)

  1. Front Matter

    Pages i-xxi
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  2. Fundamental Concepts

    • Peter Pichler
    Pages 1-75

  3. Intrinsic Point Defects

    • Peter Pichler
    Pages 77-227

  4. Impurity Diffusion in Silicon

    • Peter Pichler
    Pages 229-279

  5. Isovalent Impurities

    • Peter Pichler
    Pages 281-329

  6. Dopants

    • Peter Pichler
    Pages 331-467

  7. Chalcogens

    • Peter Pichler
    Pages 469-512

  8. Halogens

    • Peter Pichler
    Pages 513-536

  9. Back Matter

    Pages 537-562
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Keywords

About this book

Basically all properties of semiconductor devices are influenced by the distribution of point defects in their active areas. This book contains the first comprehensive review of the properties of intrinsic point defects, acceptor and donor impurities, isovalent atoms, chalcogens, and halogens in silicon, as well as of their complexes. Special emphasis is placed on compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behavior from experimental and theoretical investigations. In addition, the book discusses the fundamental concepts of silicon and its defects, the electron system, diffusion, thermodynamics, and reaction kinetics which form the scientific basis needed for a thorough understanding of the text. Therefore, the book is able to provide an introduction to newcomers in this field up to a comprehensive reference for experts in process technology, solid-state physics, and simulation of semiconductor processes.

Authors and Affiliations

  • Fraunhofer Institut für Integrierte Systeme und Bauelementetechnologie (IISB), Erlangen, Germany

    Peter Pichler

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