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Transmission Electron Microscopy of Semiconductor Nanostructures

An Analysis of Composition and Strain State

  • Book
  • © 2003

Overview

Authors:
  1. Andreas Rosenauer

    1. Lab. Electron Microscopy, University Karlsruhe, Karlsruhe, Germany

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  • Up-to-date overview
  • No related/competitive literature on the market
  • Covers fundamentals and current topics of TEM
  • Highly important technology for future production of nanostructures
  • Includes supplementary material: sn.pub/extras

Part of the book series: Springer Tracts in Modern Physics (STMP, volume 182)

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Table of contents (10 chapters)

  1. Front Matter

    Pages I-XII
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  2. Introduction

    1. Introduction

      Pages 1-9

  3. Theoretical Fundamentals of Transmission Electron Microscopy

    1. Electron Diffraction

      Pages 13-32

    2. Image Formation

      Pages 33-53

  4. Digital Image Analysis

    1. Strain State Analysis

      Pages 57-85

    2. Lattice Fringe Analysis

      Pages 87-136

  5. Applications

    1. Introduction

      Pages 139-145

    2. In0.6Ga0.4As/GaAs(001) SK Layers

      Pages 147-167

    3. InAs Quantum Dots

      Pages 169-192

    4. Electron Holography: AlAs/GaAs Superlattices

      Pages 193-208

    5. Outlook

      Pages 209-210

  6. Back Matter

    Pages 213-240
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Keywords

About this book

This book provides tools well suited for the quantitative investigation of semiconductor electron microscopy. These tools allow for the accurate determination of the composition of ternary semiconductor nanostructures with a spatial resolution at near atomic scales. The book focuses on new methods including strain state analysis as well as evaluation of the composition via the lattice fringe analysis (CELFA) technique. The basics of these procedures as well as their advantages, drawbacks and sources of error are all discussed. The techniques are applied to quantum wells and dots in order to give insight into kinetic growth effects such as segregation and migration. In the first part of the book the fundamentals of transmission electron microscopy are provided. These are needed for an understanding of the digital image analysis techniques described in the second part of the book. There the reader will find information on different methods of composition determination. The third part of the book focuses on applications such as composition determination in InGaAs Stranski--Krastanov quantum dots. Finally it is shown how an improvement in the precision of the composition evaluation can be obtained by combining CELFA with electron holography. This is demonstrated for an AlAs/GaAs superlattice.

Authors and Affiliations

  • Lab. Electron Microscopy, University Karlsruhe, Karlsruhe, Germany

    Andreas Rosenauer

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