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Polycrystalline Semiconductors

Grain Boundaries and Interfaces

  • Conference proceedings
  • © 1989

Overview

Editors:
  1. Hans J. Möller

    1. Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, USA

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  2. Horst P. Strunk

    1. Technische Universität Hamburg-Harburg, Hamburg 90, Fed. Rep. of Germany

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  3. Jürgen H. Werner

    1. Max-Planck-Institut für Festkörperforschung, Stuttgart 80, Fed. Rep. of Germany

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Part of the book series: Springer Proceedings in Physics (SPPHY, volume 35)

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Table of contents (53 papers)

  1. Front Matter

    Pages I-XI
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  3. Grain Boundary Chemistry and Electronic Properties

    1. Front Matter

      Pages 41-41
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    2. High Resolution Electron Microscopy of the Structure and Chemistry of Grain Boundaries and Other Interfaces in Semiconductors

      • Y. Ishida, H. Ichinose
      Pages 42-51

    3. Theoretical Studies of the Impurity Segregation and Electrical Properties of Polycrystalline Silicon by LCAO Electronic Theory

      • K. Masuda-Jindo
      Pages 52-57

    4. Electronic Properties of Σ = 25 Silicon Bicrystals by Deep Level Transient Spectroscopy

      • J. F. Hamet, G. Nouet
      Pages 58-63

    5. The Influence of Structure and Impurity Precipitation on the Electrical Properties of the Grain Boundaries in Silicon: Copper Precipitation in the Σ = 25 Boundary

      • M. Aucouturier, A. Broniatowski, A. Chari, J. L. Maurice
      Pages 64-76

    6. EBIC Contrast and Precipitation in Σ = 13 and Σ = 25 Annealed Silicon Bicrystals

      • A. Ihlal, G. Nouet
      Pages 77-82

    7. Electron Beam Induced Current Contrast and Transmission Electron Microscopy Analysis of Special Grain Boundaries in Silicon

      • J.-L. Maurice, C. Colliex
      Pages 83-88

    8. SEM-EBIC Investigations of the Electrical Activity of Grain Boundaries in Germanium

      • N. Tabet, C. Monty, Y. Marfaing
      Pages 89-94

  4. Segregation, Activation and Passivation I

    1. Front Matter

      Pages 95-95
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    2. Atomic-Level Imaging and Microanalysis of Grain Boundaries in Polycrystalline Semiconductors

      • L. L. Kazmerski
      Pages 96-107

    3. Investigation of the Cobalt Segregation at Grain Boundaries in Silicon

      • T. Tütken, W. Schröter, H. J. Möller
      Pages 108-114

    4. On the Influence of the Cottrell Atmosphere on the Recombination Losses at Grain Boundaries in Polycrystalline Silicon

      • S. Pizzini, F. Borsani, A. Sandrinelli, D. Narducci, M. Anderle, R. Canteri
      Pages 115-121

    5. Hydrogen Passivation of Grain Boundaries in Silicon Sheet Material

      • M. Pirzer, R. Schindler
      Pages 122-126
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Keywords

Editors and Affiliations

  • Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, USA

    Hans J. Möller

  • Technische Universität Hamburg-Harburg, Hamburg 90, Fed. Rep. of Germany

    Horst P. Strunk

  • Max-Planck-Institut für Festkörperforschung, Stuttgart 80, Fed. Rep. of Germany

    Jürgen H. Werner

Bibliographic Information

  • Book Title: Polycrystalline Semiconductors

  • Book Subtitle: Grain Boundaries and Interfaces

  • Editors: Hans J. Möller, Horst P. Strunk, Jürgen H. Werner

  • Series Title: Springer Proceedings in Physics

  • DOI: https://doi.org/10.1007/978-3-642-93413-1

  • Publisher: Springer Berlin, Heidelberg

  • eBook Packages: Springer Book Archive

  • Copyright Information: Springer-Verlag Berlin Heidelberg 1989

  • Softcover ISBN: 978-3-642-93415-5Published: 18 April 2014

  • eBook ISBN: 978-3-642-93413-1Published: 06 December 2012

  • Series ISSN: 0930-8989

  • Series E-ISSN: 1867-4941

  • Edition Number: 1

  • Number of Pages: XI, 394

  • Number of Illustrations: 250 b/w illustrations, 3 illustrations in colour

  • Topics: Electronics and Microelectronics, Instrumentation, Physical Chemistry, Surfaces and Interfaces, Thin Films

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