Skip to main content
SpringerLink
Log in
Book cover

Molecular Beam Epitaxy

Fundamentals and Current Status

  • Textbook
  • © 1996

Overview

Authors:
  1. Marian A. Herman

    1. Institute of Physics, Polish Academy of Sciences, Warszawa, Poland
      Institute of Vacuum Technology, Warszawa, Poland

    View author publications

    You can also search for this author in PubMed   Google Scholar

  2. Helmut Sitter

    1. Institut für Experimentalphysik, Johannes Kepler Universität, Linz/Auhof, Austria

    View author publications

    You can also search for this author in PubMed   Google Scholar

Part of the book series: Springer Series in Materials Science (SSMATERIALS, volume 7)

This is a preview of subscription content, log in via an institution to check access.

Access this book

Log in via an institution
eBook USD 79.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book USD 99.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Other ways to access

Licence this eBook for your library

Institutional subscriptions

Table of contents (8 chapters)

  1. Front Matter

    Pages I-XIV
    Download chapter PDF

  2. Background Information

    1. Introduction

      • Marian A. Herman, Helmut Sitter
      Pages 1-31

  3. Technological Equipment

    1. Sources of Atomic and Molecular Beams

      • Marian A. Herman, Helmut Sitter
      Pages 33-79

    2. High-Vacuum Growth and Processing Systems

      • Marian A. Herman, Helmut Sitter
      Pages 81-134

  4. Characterization Methods

    1. Characterization Techniques

      • Marian A. Herman, Helmut Sitter
      Pages 135-227

  5. MBE Growth Process

    1. MBE Growth Processes of Lattice-Matched Structures

      • Marian A. Herman, Helmut Sitter
      Pages 229-288

    2. Growth Processes in Strained-Layer MBE

      • Marian A. Herman, Helmut Sitter
      Pages 289-325

    3. Material-Related Growth Characteristics in MBE

      • Marian A. Herman, Helmut Sitter
      Pages 327-380

  6. Conclusion

    1. Outlook

      • Marian A. Herman, Helmut Sitter
      Pages 381-398

  7. Back Matter

    Pages 399-456
    Download chapter PDF
Back to top

Keywords

About this book

Molecular Beam Epitaxy describes a technique in wide-spread use for the production of high-quality semiconductor devices. It discusses the most important aspects of the MBE apparatus, the physics and chemistry of the crystallization of various materials and device structures, and the characterization methods that relate the structural parameters of the grown (or growing) film or structure to the technologically relevant procedure. In this second edition two new fields have been added: crystallization of as-grown low-dimensional heterostructures, mainly quantum wires and quantum dots, and in-growth control of the MBE crystallization process of strained-layer structures. Out-of-date material has been removed.

Authors and Affiliations

  • Institute of Physics, Polish Academy of Sciences, Warszawa, Poland

    Marian A. Herman

  • Institute of Vacuum Technology, Warszawa, Poland

    Marian A. Herman

  • Institut für Experimentalphysik, Johannes Kepler Universität, Linz/Auhof, Austria

    Helmut Sitter

Bibliographic Information

Publish with us

Policies and ethics

Back to top

Search

Navigation