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Mesoscopic Physics and Electronics

  • Book
  • © 1998

Overview

Editors:
  1. T. Ando

    1. Institute for Solid State Physics, University of Tokyo, Minato-ku, Tokyo 106, Japan

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  2. Y. Arakawa

    1. Institute of Industrial Science, University of Tokyo, Minato-ku, Tokyo 106, Japan

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  3. K. Furuya

    1. Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo 152, Japan

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  4. S. Komiyama

    1. Department of Basic Science, University of Tokyo, Meguro-ku, Tokyo 153, Japan

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  5. H. Nakashima

    1. Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567, Japan

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  • The first comprehensive monograph covering the complete spectrum of mesoscopic physics in electronic nanodevices
  • It will become the basic book in this new field of research worldwide

Part of the book series: NanoScience and Technology (NANO)

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Table of contents (35 chapters)

  1. Front Matter

    Pages I-XIV
    Download chapter PDF

  2. Introduction — Mesoscopic Systems

    1. Introduction

      • T. Ando
      Pages 1-2

    2. Length Scales Characterizing Mesoscopic Systems

      • T. Ando
      Pages 3-10

    3. Landauer’s Formula

      • T. Ando
      Pages 11-14

    4. Fluctuations and Aharonov-Bohm Effect

      • H. Fukuyama
      Pages 15-21

    5. Ballistic Electron Transport

      • A. Kawabata
      Pages 22-30

    6. Coulomb Blockade

      • A. Kawabata
      Pages 31-43

  3. Transport in Quantum Structures

    1. Tomonaga—Luttinger Liquid in Quantum Wires

      • M. Ogata, H. Fukuyama
      Pages 45-53

    2. Quantum Wires

      • A. Kawabata
      Pages 54-60

    3. Magnetophonon Resonance in Quantum Wires

      • N. Mori, C. Hamaguchi
      Pages 61-65

    4. Quantum Dots and Artificial Atoms

      • S. Tarucha
      Pages 66-71

    5. Antidot Lattices — Classical and Quantum Chaos

      • T. Ando
      Pages 72-89

    6. Electric and Magnetic Lateral Superlattices

      • Y. Iye
      Pages 90-95

    7. Terahertz Spectroscopy of Nanostructures

      • K. Hirakawa
      Pages 96-103

    8. Wannier—Stark Effect in Transport

      • M. Morifuji, C. Hamaguchi
      Pages 104-108

  4. Quantum Hall Effect

    1. Crossover from Quantum to Classical Regime

      • T. Ando
      Pages 109-119

    2. Edge States and Nonlocal Effects

      • S. Komiyama
      Pages 120-131

    3. Magnetocapacitance and Edge States

      • K. Murase, S. Takaoka, K. Oto
      Pages 132-137

  5. Electron-Photon Interaction in Nanostructures

    1. Introduction

      • Y. Arakawa
      Pages 139-139

    2. Theory of Electron-Photon Interaction

      • A. Shimizu
      Pages 140-155
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Keywords

About this book

Semiconductor technology has developed considerably during the past several decades. The exponential growth in microelectronic processing power has been achieved by a constant scaling down of integrated cir,cuits. Smaller fea­ ture sizes result in increased functional density, faster speed, and lower costs. One key ingredient of the LSI technology is the development of the lithog­ raphy and microfabrication. The current minimum feature size is already as small as 0.2 /tm, beyond the limit imposed by the wavelength of visible light and rapidly approaching fundamental limits. The next generation of devices is highly likely to show unexpected properties due to quantum effects and fluctuations. The device which plays an important role in LSIs is MOSFETs (metal­ oxide-semiconductor field-effect transistors). In MOSFETs an inversion layer is formed at the interface of silicon and its insulating oxide. The inversion layer provides a unique two-dimensional (2D) system in which the electron concentration is controlled almost freely over a very wide range. Physics of such 2D systems was born in the mid-1960s together with the development of MOSFETs. The integer quantum Hall effect was first discovered in this system.

Editors and Affiliations

  • Institute for Solid State Physics, University of Tokyo, Minato-ku, Tokyo 106, Japan

    T. Ando

  • Institute of Industrial Science, University of Tokyo, Minato-ku, Tokyo 106, Japan

    Y. Arakawa

  • Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo 152, Japan

    K. Furuya

  • Department of Basic Science, University of Tokyo, Meguro-ku, Tokyo 153, Japan

    S. Komiyama

  • Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567, Japan

    H. Nakashima

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