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High-Frequency Bipolar Transistors

  • Book
  • © 2003

Overview

Authors:
  1. Michael Reisch

    1. FH Kempten, University of Applied Sciences, Kempten/Allgäu, Germany

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  • Hot topic in modern microelectronics
  • Fast single and integrated transistors as well as integrated bipolar circuits are treated
  • Includes supplementary material: sn.pub/extras

Part of the book series: Springer Series in Advanced Microelectronics (MICROELECTR., volume 11)

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Table of contents (8 chapters)

  1. Front Matter

    Pages II-XX
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  2. Introduction

    1. Front Matter

      Pages 1-1
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    2. An Introductory Survey

      • Michael Reisch
      Pages 3-116

  3. Physics and Modeling of High-Frequency Bipolar Transistors

    1. Front Matter

      Pages 117-117
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    2. Semiconductor Physics Required for Bipolar-Transistor Modeling

      • Michael Reisch
      Pages 119-174

    3. Physics and Modeling of Bipolar Junction Transistors

      • Michael Reisch
      Pages 175-358

    4. Physics and Modeling of Heterojunction Bipolar Transistors

      • Michael Reisch
      Pages 359-410

    5. Noise Modeling

      • Michael Reisch
      Pages 411-459

  4. Circuits and Technology

    1. Front Matter

      Pages 461-461
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    2. Basic Circuit Configurations

      • Michael Reisch
      Pages 463-509

    3. Process Integration

      • Michael Reisch
      Pages 511-550

    4. Applications

      • Michael Reisch
      Pages 551-574

  5. Back Matter

    Pages 575-658
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About this book

This book provides a rather comprehensive presentation of the physics and modeling of high-frequency bipolar transistors with particular emphasis given to silicon-based devices. I hope it will be found useful by those who do as well as by those who intend to work in the field, as it compiles and extends material presented in numerous publications in a coherent fashion. I've worked on this project for years and did my best to avoid errors. De­ spite all efforts it is possible that "something" has been overlooked during copy-editing and proof-reading. If you find a mistake please let me know. Michael Reisch Kempten, December 2002 Notation It is intended here to use the most widely employed notation, in cases where the standard textbook notation is different from the SPICE notation, the latter is used. In order to make formulas more readable, model parameters represented in SPICE by a series of capital letters are written here as one capital letter with the rest in the form of a subscript (e.g. XCJC is used here instead of the XCJC used in the SPICE input). Concerning the use of lower-case and capital letters, the following rules are applied: • Time-dependent large-signal quantities are represented by lower-case let­ ters. The variables 't, v and p therefore denote time-dependent current, voltage and power values.

Authors and Affiliations

  • FH Kempten, University of Applied Sciences, Kempten/Allgäu, Germany

    Michael Reisch

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