Overview
- Summarizes the current state of the art of GaN growth technology
- Integrates materials science and physical aspects
- A reference work for researchers and engineers alike
- May serve as a study text for graduate students in materials sciences
- Includes supplementary material: sn.pub/extras
Part of the book series: Springer Series in Materials Science (SSMATERIALS, volume 133)
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Table of contents (14 chapters)
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Front Matter
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Market for Bulk GaN Crystals
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Front Matter
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Vapor Phase Growth Technology
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Front Matter
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Solution Growth Technology
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Front Matter
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Characterization of GaN Crystals
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Front Matter
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Keywords
About this book
This book deals with the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production. Leading experts from industry and academia report in a very comprehensive way on the current state-of-the-art of the growth technologies and optical and structural properties of the GaN crystals are compared.
Editors and Affiliations
About the editors
Dr. Dirk Ehrentraut received a Diploma in Crystallography from the Humboldt University of Berlin, Germany and a Ph.D. in Sciences from the Institute of Applied Optics at the Swiss Federal Institute of Technology in Lausanne (EPFL), Switzerland. He joined the Tohoku University end of 2003 and is currently a visiting professor of the Institute of Multidisciplinary Research of Advanced Materials. His field of competence covers the crystal growth of films and bulk material from the liquid and vapor phase and material aspects of the wide band gap semiconductors of group-III nitrides and ZnO. He has authored 130 publications in books, journals and conferences and holds 6 patents.
Dr. Elke Meissner graduated from the University of Erlangen, Germany in the field of applied mineralogy. Later she received a PhD from the University of Bayreuth, Germany. She is a senior scientist in the Department of Crystal Growth at the Fraunhofer Institute of Integrated Systems and Device Technology (IISB) in Erlangen and became head of the working group Defect Engineering in 2007. She has a broad background in process properties correlation for advanced materials in various fields like silicon nitride ceramics and applied & experimental mineralogy. Her recent work is strongly focussed on the structural characterization of crystals and crystal layers of novel semiconductors. Dr. Meissner is inventor or co-inventor of 3 international patents and authored more than 50 papers or contributions to journals and conference.
Dr. Michal Bockowski received the M.Sc. Eng. in Solid State Physics from the Warsaw University of Technology, Poland and the Ph.D. in the Chemistry of Solids 1995 from the University Montpellier II, France. He is currently a Research Associate of the Institute of High Pressure Physics of the Polish Academy of Sciences and a technologist at TopGaN Ltd., Poland. He has authored >120 publications in journals and conferences and holds 2 international patents.
Bibliographic Information
Book Title: Technology of Gallium Nitride Crystal Growth
Editors: Dirk Ehrentraut, Elke Meissner, Michal Bockowski
Series Title: Springer Series in Materials Science
DOI: https://doi.org/10.1007/978-3-642-04830-2
Publisher: Springer Berlin, Heidelberg
eBook Packages: Physics and Astronomy, Physics and Astronomy (R0)
Copyright Information: Springer-Verlag Berlin Heidelberg 2010
Hardcover ISBN: 978-3-642-04828-9Published: 24 June 2010
Softcover ISBN: 978-3-642-26389-7Published: 05 September 2012
eBook ISBN: 978-3-642-04830-2Published: 14 June 2010
Series ISSN: 0933-033X
Series E-ISSN: 2196-2812
Edition Number: 1
Number of Pages: XXII, 326
Number of Illustrations: 200 b/w illustrations
Topics: Condensed Matter Physics, Electronics and Microelectronics, Instrumentation, Crystallography and Scattering Methods, Optical and Electronic Materials