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Chemical-Mechanical Planarization of Semiconductor Materials

  • Book
  • © 2004

Overview

Editors:
  1. Michael R. Oliver

    1. Rodel Inc., Portland, USA

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  • Comprehensive book covering the technology of CMP for all semiconductor related materials, as well as
  • the science and modelling of the various mechanisms
  • Includes supplementary material: sn.pub/extras

Part of the book series: Springer Series in Materials Science (SSMATERIALS, volume 69)

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Table of contents (10 chapters)

  1. Front Matter

    Pages I-XI
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  2. Introduction

    • Michael R. Oliver
    Pages 1-6

  3. CMP Technology

    • Michael R. Oliver
    Pages 7-40

  4. Metal Polishing Processes

    • D. R. Evans
    Pages 41-83

  5. Metal CMP Science

    • David Stein
    Pages 85-132

  6. Equipment Used in CMP Processes

    • Thomas Tucker
    Pages 133-165

  7. CMP Polishing Pads

    • David B. James
    Pages 167-213

  8. Fundamentals of CMP Slurry

    • Karl Robinson
    Pages 215-249

  9. CMP Cleaning

    • John de Larios
    Pages 251-281

  10. Patterned Wafer Effects

    • D. Boning, D. Hetherington
    Pages 283-349

  11. Integration Issues of CMP

    • K. M. Robinson, K. DeVriendt, D. R. Evans
    Pages 351-417

  12. Back Matter

    Pages 419-428
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Keywords

About this book

Chemical Mechanical Planarization (CMP) has emerged in the last two decades and grown rapidly as a basic technology widely used in semiconduc­ tor device fabrication. As a semiconductor processing step, it was developed at IBM in the mid 1980s. From this beginning the technology has been widely adopted throughout the semiconductor industry. As basic CMP technology has been understood and accepted throughout the semiconductor industry, its uses in different parts of the semiconductor process have multiplied. This includes special steps for some special process­ ing flows, such as for DRAM technology. In addition, the availability of CMP technology has enabled the implementation of new technologies, with the best example being copper interconnect technology. Copper could not be practi­ cally implemented into semiconductor process flows until the advent of CMP. Unfortunately, the rapid acceptance and implementation of CMP technol­ ogy in wafer fabrication has occurred without a corresponding rate of advance in the underlying science. Progress is being made in understanding the un­ derlying CMP mechanisms, but, in general, it is slow and uneven. The most noteworthy exception to this trend is the science of metal CMP reactions, where the scientific understanding is actually driving much of the advance of the technology. There has been no corresponding progress in other CMP areas however.

Editors and Affiliations

  • Rodel Inc., Portland, USA

    Michael R. Oliver

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