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Ferroelectric Random Access Memories

Fundamentals and Applications

  • Book
  • © 2004

Overview

Editors:
  1. Hiroshi Ishiwara

    1. Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama, Japan

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  2. Masanori Okuyama

    1. Graduate School of Engineering Science, Department of Systems Innovation, Osaka University, Osaka, Japan

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    You can also search for this editor in PubMed   Google Scholar

  3. Yoshihiro Arimoto

    1. Silicon Technology Laboratories, Fujitsu Laboratories Ltd., Atsugi, Japan

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  • Presents the state of the art of ferroelectric RAM design
  • Application oriented reviews by leading experts
  • Up-to-date references
  • Includes supplementary material: sn.pub/extras

Part of the book series: Topics in Applied Physics (TAP, volume 93)

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Table of contents (18 chapters)

  1. Front Matter

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  2. Overview

    • James F. Scott
    Pages 3-16

  3. Novel Si-Substituted Ferroelectric Films

    • Takeshi Kijima, Hiroshi Ishiwara
    Pages 17-30

  4. Static and Dynamic Properties of Domains

    • Rainer Waser, Ulrich Böttger, Michael Grossmann
    Pages 31-46

  5. Nanoscale Phenomena in Ferroelectric Thin Films

    • Valanoor Nagarajan, Chandan S. Ganpule, Ramamoorthy Ramesh
    Pages 47-70

  6. The Sputtering Technique

    • Koukou Suu
    Pages 71-84

  7. A Chemical Approach Using Liquid Sources Tailored to Bi-Based Layer-Structured Perovskite Thin Films

    • Kazumi Kato
    Pages 85-94

  8. Recent Development in the Preparation of Ferroelectric Thin Films by MOCVD

    • Hiroshi Funakubo
    Pages 95-104

  9. Materials Integration Strategies

    • Orlando Auciello, Anil M. Dhote, Bao T. Liu, Sanjeev Aggarwal, Ramamoorthy Ramesh
    Pages 105-122

  10. Characterization by Scanning Nonlinear Dielectric Microscopy

    • Yasuo Cho
    Pages 123-138

  11. The Current Status of FeRAM

    • Glen R. Fox, Richard Bailey, William B. Kraus, Fan Chu, Shan Sun, Tom Davenport
    Pages 139-148

  12. Operation Principle and Circuit Design Issues

    • Ali Sheikholeslami
    Pages 149-164

  13. High-Density Integration

    • Kinam Kim
    Pages 165-176

  14. Testing and Reliability

    • Yasuhiro Shimada
    Pages 177-196

  15. Chain \protect\mbox{FeRAMs}

    • Daisaburo Takashima, Yukihito Oowaki
    Pages 197-214

  16. Capacitor-on-Metal/Via-Stacked-Plug (CMVP) Memory Cell Technologies and Application to a Nonvolatile SRAM

    • Hiromitsu Hada, Kazushi Amanuma, Tohru Miwa, Sota Kobayashi, Toru Tatsumi, Yukihiko Maejima et al.
    Pages 215-232

  17. The FET-Type FeRAM

    • Hiroshi Ishiwara
    Pages 233-254

  18. Ferroelectric Technologies \newline for Portable Equipment

    • Yoshikazu Fujimori, Takashi Nakamura, Hidemi Takasu
    Pages 255-270

  19. The Application of FeRAM to Future Information Technology World

    • Shoichi Masui, Shunsuke Fueki, Koichi Masutani, Amane Inoue, Toshiyuki Teramoto, Tetsuo Suzuki et al.
    Pages 271-283
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Keywords

About this book

In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on. This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts: (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects; each part is further divided into several chapters. Because of the wide range of topics discussed, each chapter in this book was written by one of the best authors knowing the specific topic very well. Thus, this is a good introductory book on FeRAM for graduate students and newcomers to this field; it also helps specialists to understand FeRAMs more deeply.

Editors and Affiliations

  • Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama, Japan

    Hiroshi Ishiwara

  • Graduate School of Engineering Science, Department of Systems Innovation, Osaka University, Osaka, Japan

    Masanori Okuyama

  • Silicon Technology Laboratories, Fujitsu Laboratories Ltd., Atsugi, Japan

    Yoshihiro Arimoto

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