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SiC Power Materials

Devices and Applications

  • Book
  • © 2004

Overview

Editors:
  1. Zhe Chuan Feng

    1. Graduate Institute of Electro-Optical Engineering, Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, ROC

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  • Most advanced book on Si.
  • C power devices and the materials science behind
  • Includes supplementary material: sn.pub/extras

Part of the book series: Springer Series in Materials Science (SSMATERIALS, volume 73)

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Table of contents (11 chapters)

  1. Front Matter

    Pages I-XIX
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  2. Materials Science and Engineering of Bulk Silicon Carbides

    • T. Sudarshan
    Pages 1-61

  3. Fundamental Properties of SiC: Crystal Structure, Bonding Energy, Band Structure, and Lattice Vibrations

    • J. Dong, A.-B. Chen
    Pages 63-87

  4. Sublimation Growth of SiC Single Crystals

    • N. Ohtani, T. Fujimoto, M. Katsuno, H. Yashiro
    Pages 89-121

  5. Crystal Growth of Silicon Carbide: Evaluation and Modeling

    • E. Pernot, M. Pons, R. Madar
    Pages 123-160

  6. Lattice Dynamics of Defects and Thermal Properties of 3C-SiC

    • D. N. Talwar
    Pages 161-208

  7. Optical and Interdisciplinary Analysis of Cubic SiC Grown on Si by Chemical Vapor Deposition

    • Z. C. Feng
    Pages 209-276

  8. Electron Paramagnetic Resonance Characterization of SiC

    • M. E. Zvanut
    Pages 277-302

  9. Material Selection and Interfacial Reaction in Ohmic-Contact Formation on SiC

    • W. Lu, W. E. Collins, W. C. Mitchel
    Pages 303-343

  10. Oxidation, MOS Capacitors, and MOSFETs

    • S. Dimitrijev, H. B. Harrison, P. Tanner, K. Y. Cheong, J. Han
    Pages 345-373

  11. 4H-SiC Power-Switching Devices for Extreme-Environment Applications

    • Z. Luo, T. Chen, D. C. Sheridan, J. D. Cressler
    Pages 375-409

  12. SiC Nuclear-Radiation Detectors

    • N. B. Strokan, A. M. Ivanov, A. A. Lebedev
    Pages 411-445

  13. Back Matter

    Pages 447-452
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Keywords

About this book

In the 1950s Shockley predicted that SiC would quickly replace Si as a result of its superior material properties. In many ways he was right and today there is an active industry based on SiC, with new achievements being reported every year. This book reviews the progress achieved in SiC research and development, particularly over the past 10 years. It presents the essential properties of 3C-, 6H- and 4H-SiC polytypes including structural, electrical, optical, surface and interface properties; describes existing key SiC devices and also the challenges in materials growth and device fabrication of the 21st century. Overall it provides an up-to-date reference book suitable for a broad audience of newcomers, graduate students and engineers in industrial R&D.

Editors and Affiliations

  • Graduate Institute of Electro-Optical Engineering, Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, ROC

    Zhe Chuan Feng

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