Authors:
- Details the current state of knowledge regarding the properties of ionized defects in advanced transistors, photo-active devices, catalysts, and sensors
- Includes supplementary material: sn.pub/extras
Part of the book series: Engineering Materials and Processes (EMP)
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Table of contents (8 chapters)
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Front Matter
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Back Matter
About this book
Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of “defect engineering”. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. “Charged Defects in Semiconductors” details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.
Authors and Affiliations
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Department of Chemical and Biomolecular Engineering, University of Illinois at Urbana-Champaign, Urbana, USA
Edmund G. Seebauer, Meredith C. Kratzer
About the authors
Edmund Seebauer is currently Head of Chemical and Biomolecular Engineering at the University of Illinois at Urbana-Champaign. Since 1987 he has been the Chair or co-Chair of numerous sessions on surface chemisty, materials chemistry and microelectronics fabrication for national meetings of AIChE, AVS and MRS.
Meredith Kratzer is working towards a PhD in Chemical & Biomolecular Engineering at the University of Illinois at Urbana-Champaign. She received her B.S. (cum laude) in Chemical Engineering from Cornell University.
Bibliographic Information
Book Title: Charged Semiconductor Defects
Book Subtitle: Structure, Thermodynamics and Diffusion
Authors: Edmund G. Seebauer, Meredith C. Kratzer
Series Title: Engineering Materials and Processes
DOI: https://doi.org/10.1007/978-1-84882-059-3
Publisher: Springer London
eBook Packages: Physics and Astronomy, Physics and Astronomy (R0)
Copyright Information: Springer-Verlag London 2009
Hardcover ISBN: 978-1-84882-058-6Published: 01 December 2008
Softcover ISBN: 978-1-84996-820-1Published: 22 October 2010
eBook ISBN: 978-1-84882-059-3Published: 14 November 2008
Series ISSN: 1619-0181
Series E-ISSN: 2365-0761
Edition Number: 1
Number of Pages: XIV, 298
Topics: Solid State Physics, Spectroscopy and Microscopy, Optical and Electronic Materials, Solid Mechanics, Electronics and Microelectronics, Instrumentation, Engineering Thermodynamics, Heat and Mass Transfer