The Physics and Chemistry of SiO2 and the Si-SiO2 Interface

1. Front Matter

   Pages i-xiii

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2. Growth Mechanisms of SIO2 Films

   1. Front Matter

      Pages 1-3

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   2. Historical Perspectives of Silicon Oxidation

      • Bruce E. Deal

      Pages 5-16

   3. Oxidation of Silicon: Tests of Mechanisms

      • Robert H. Doremus

      Pages 17-23

   4. Silicon Oxidation Models Based on Parallel Mechanisms

      • C. R. Helms, J. de Larios

      Pages 25-34

   5. The Role of SiO in Si Oxidation at a Si-SiO2 Interface

      • S. I. Raider

      Pages 35-42

   6. Uncertainty Analysis of Analytic Oxidation Models

      • Zhi-Min Ling, Luc H. Dupas, Kristin M. De Meyer

      Pages 43-51

   7. Modeling of the Oxide Growth in a Chlorine Ambient

      • Zhi-Min Ling, Luc H. Dupas, Kristin M. De Meyer

      Pages 53-59

   8. Silicon Oxidation Studies: A Review of Recent Studies on Thin Film Silicon Dioxide Formation

      • Eugene A. Irene

      Pages 61-74

   9. Si Oxidation Mechanisms as Studied by Oxygen Tracer Methods

      • S. Rico

      Pages 75-84

   10. The Oxidation of Silicides on Silicon

       • F. M. d’Heurle

       Pages 85-94

   11. Oxidation Kinetics of Si in Dry CO2

       • Tadashi Sakon, J. B. Wagner Jr.

       Pages 95-102

   12. A Novel Silicon Oxidation Method — HF Enhanced Oxidation

       • Long Wei, Xu Yuan-sen, Zheng Yang-shu

       Pages 103-110

   13. Thermal Oxidation of Silicon in an Afterglow Gas

       • Andrew M. Hoff, Jerzy Ruzyllo

       Pages 111-117

   14. Deposition of SiO2 Thin Films by Remote Plasma Enhanced Chemical Vapor Deposition (Remote PECVD)

       • D. V. Tsu, S. S. Kim, G. Lucovsky

       Pages 119-127

   15. Anodic SiO2 for Low Temperature Gate Dielectrics

       • Keyvan Sayyah

       Pages 129-136

3. Thermal and Structural Properties of SiO2

   1. Front Matter

      Pages 137-138

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   2. Local Atomic Structure of Thermally Grown SiO2 Films

      • G. Lucovsky, J. T. Fitch, E. Kobeda, E. A. Irene

      Pages 139-148

   3. Structural Relaxation and Growth of SiO2 Films on Si

      • R. W. Rendell, K. L. Ngai

      Pages 149-157

   4. Structural Relaxation Effects in Dry Thermal Silicon Dioxide Films on Silicon

      • L. M. Landsberger, W. A. Tiller

      Pages 159-167

The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even though they often investigate quite similar aspects of the Si02 system. Desiring to facilitate an interaction between these groups we set out to organize a symposium on the Physics and Chemistry of Si()z and the Si-Si()z Interface under the auspices of The Electrochemical Society, which represents a number of the appropriate groups. This symposium was held at the 173rd Meeting of The Electrochemical Society in Atlanta, Georgia, May 15-20, 1988. These dates nearly coincided with the ten year anniversary of the "International Topical Conference on the Physics of Si02 and its Interfaces" held at mM in 1978. We have modeled the present symposium after the 1978 conference as well as its follow on at North Carolina State in 1980. Of course, much progress has been made in that ten years and the symposium has given us the opportunity to take a multidisciplinary look at that progress.

• Hochfrequenz
• MOSFET
• materials science
• model
• modeling
• photoelektrochemische Zelle
• semiconductor devices
• spectroscopy
• thin film
• thin films

• Stanford University, Stanford, USA

  C. Robert Helms

• Fairchild Research Center, National Semiconductor, Santa Clara, USA

  Bruce E. Deal

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