Skip to main content

Quantum Semiconductor Devices and Technologies

  • Book
  • © 2000

Overview

Part of the book series: Electronic Materials Series (EMAT, volume 6)

This is a preview of subscription content, log in via an institution to check access.

Access this book

eBook USD 84.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book USD 109.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book USD 109.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Other ways to access

Licence this eBook for your library

Institutional subscriptions

Table of contents (6 chapters)

Keywords

About this book

stacked QD structure and is useful for examining the possibility of all­ optical measurement of stacked QD layers. Optical absorption spectra of self-assembled QDs has been little reported, and further investigation in necessary to study hole-burning memory. 2.5 Summary This chapter describes recent advances in quantum dot fabrication tech­ nologies, focusing on our self-formed quantum dot technologies including TSR quantum dots and SK-mode self-assembled quantum dots. As is described in this chapter, there are many possible device applications such as quantum dot tunneling memory devices, quantum dot fioating-dot gate FETs, quantum dot lasers, and quantum dot hole-burning memory devices. The quantum dot laser applications seem to be the most practicable among these applications. However, many problems remain to be solved before even this application becomes practical. The most important issue is to of self-assembled quantum dots more pre­ control the size and position cisely, with an accuracy on an atomic scale. The confinement must be enough to keep the separation energy between quantized energy levels high enough to get high-temperature characteristics. The lasing oscillation frequency should be fixed at 1.3 f.lITl or 1.5 f.lITl for optical communication. Phonon bottleneck problems should be solved by the optimization of device structures. Fortunately, there is much activity in the area of quantum dot lasers and, therefore, many breakthroughs will be made, along with the exploration of other new application areas.

Editors and Affiliations

  • Centre de EuropĂ©en de Recherche de Fontainbleau, Corning, S.A., Avon, France

    T. P. Pearsall

Bibliographic Information

  • Book Title: Quantum Semiconductor Devices and Technologies

  • Editors: T. P. Pearsall

  • Series Title: Electronic Materials Series

  • DOI: https://doi.org/10.1007/978-1-4615-4451-7

  • Publisher: Springer New York, NY

  • eBook Packages: Springer Book Archive

  • Copyright Information: Springer Science+Business Media New York 2000

  • Hardcover ISBN: 978-0-7923-7748-1Published: 30 June 2000

  • Softcover ISBN: 978-1-4613-7004-8Published: 14 March 2014

  • eBook ISBN: 978-1-4615-4451-7Published: 27 November 2013

  • Edition Number: 1

  • Number of Pages: VII, 266

  • Number of Illustrations: 77 b/w illustrations

  • Topics: Optical and Electronic Materials, Characterization and Evaluation of Materials

Publish with us