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Statistical Modeling for Computer-Aided Design of MOS VLSI Circuits

  • Book
  • © 1993

Overview

Authors:
  1. Christopher Michael

    1. National Semiconductor, USA

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    You can also search for this author in PubMed   Google Scholar

  2. Mohammed Ismail

    1. Ohio State University, USA

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    You can also search for this author in PubMed   Google Scholar

Part of the book series: The Springer International Series in Engineering and Computer Science (SECS, volume 211)

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Table of contents (8 chapters)

  1. Front Matter

    Pages i-xvi
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  2. Introduction

    • Christopher Michael, Mohammed Ismail
    Pages 1-3

  3. Survey of Statistical Modeling and Simulation Techniques

    • Christopher Michael, Mohammed Ismail
    Pages 5-13

  4. Statistical MOS Model

    • Christopher Michael, Mohammed Ismail
    Pages 15-49

  5. Experimental Process Characterization for MOS Statistical Model

    • Christopher Michael, Mohammed Ismail
    Pages 51-83

  6. CAD Implementation of the SMOS Model

    • Christopher Michael, Mohammed Ismail
    Pages 85-103

  7. Statistical CAD of Analog MOS Circuits

    • Christopher Michael, Mohammed Ismail
    Pages 105-121

  8. Applications of the SMOS Model to Digital Integrated Circuits

    • Christopher J. Abel
    Pages 123-154

  9. Conclusions

    • Christopher Michael, Mohammed Ismail
    Pages 155-158

  10. Back Matter

    Pages 159-190
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Keywords

About this book

As MOS devices are scaled to meet increasingly demanding circuit specifications, process variations have a greater effect on the reliability of circuit performance. For this reason, statistical techniques are required to design integrated circuits with maximum yield. Statistical Modeling for Computer-Aided Design of MOS VLSI Circuits describes a statistical circuit simulation and optimization environment for VLSI circuit designers. The first step toward accomplishing statistical circuit design and optimization is the development of an accurate CAD tool capable of performing statistical simulation. This tool must be based on a statistical model which comprehends the effect of device and circuit characteristics, such as device size, bias, and circuit layout, which are under the control of the circuit designer on the variability of circuit performance. The distinctive feature of the CAD tool described in this book is its ability to accurately model and simulate the effect in both intra- and inter-die process variability on analog/digital circuits, accounting for the effects of the aforementioned device and circuit characteristics. Statistical Modeling for Computer-Aided Design of MOS VLSI Circuits serves as an excellent reference for those working in the field, and may be used as the text for an advanced course on the subject.

Authors and Affiliations

  • National Semiconductor, USA

    Christopher Michael

  • Ohio State University, USA

    Mohammed Ismail

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