Computer-Aided Design and VLSI Device Development

1. Front Matter

   Pages i-xi

   PDF

2. Overview

   1. Overview

      • Kit Man Cham, Soo-Young Oh, Daeje Chin, John L. Moll

      Pages 1-9

3. Simulation Systems

   1. Front Matter

      Pages 11-11

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   2. Introduction to Numerical Simulation System

      • Kit Man Cham, Soo-Young Oh, Daeje Chin, John L. Moll

      Pages 13-21

   3. Process Simulation

      • Kit Man Cham, Soo-Young Oh, Daeje Chin, John L. Moll

      Pages 23-64

   4. Device Simulation

      • Kit Man Cham, Soo-Young Oh, Daeje Chin, John L. Moll

      Pages 65-111

   5. FCAP2: Parasitic Capacitance/Resistance Simulator

      • Kit Man Cham, Soo-Young Oh, Daeje Chin, John L. Moll

      Pages 113-119

4. Applications and Case Studies

   1. Front Matter

      Pages 121-121

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   2. Methodology in Computer-Aided Design for Process and Device Development

      • Kit Man Cham, Soo-Young Oh, Daeje Chin, John L. Moll

      Pages 123-130

   3. Basic Techniques in Simulations for Advanced Process Development

      • Kit Man Cham, Soo-Young Oh, Daeje Chin, John L. Moll

      Pages 131-158

   4. Drain-Induced Barrier Lowering In Short Channel Transistors

      • Kit Man Cham, Soo-Young Oh, Daeje Chin, John L. Moll

      Pages 159-169

   5. Transistor Design for Submicron CMOS Technology

      • Kit Man Cham, Soo-Young Oh, Daeje Chin, John L. Moll

      Pages 171-197

   6. The Surface Inversion Problem in Trench Isolated CMOS

      • Kit Man Cham, Soo-Young Oh, Daeje Chin, John L. Moll

      Pages 199-216

   7. Development of Isolation Structures for Applications in VLSI

      • Kit Man Cham, Soo-Young Oh, Daeje Chin, John L. Moll

      Pages 217-237

   8. A Study of LDD Device Structure Using 2-D Simulations

      • Kit Man Cham, Soo-Young Oh, Daeje Chin, John L. Moll

      Pages 239-259

   9. MOSFET Scaling by CADDET

      • Kit Man Cham, Soo-Young Oh, Daeje Chin, John L. Moll

      Pages 261-282

   10. Parasitics Extraction for VLSI Process Development

       • Kit Man Cham, Soo-Young Oh, Daeje Chin, John L. Moll

       Pages 283-300

5. Back Matter

   Pages 301-315

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This book is concerned with the use of Computer-Aided Design (CAD) in the device and process development of Very-Large-Scale-Integrated Circuits (VLSI). The emphasis is in Metal-Oxide-Semiconductor (MOS) technology. State-of-the-art device and process development are presented. This book is intended as a reference for engineers involved in VLSI develop­ ment who have to solve many device and process problems. CAD specialists will also find this book useful since it discusses the organization of the simula­ tion system, and also presents many case studies where the user applies the CAD tools in different situations. This book is also intended as a text or reference for graduate students in the field of integrated circuit fabrication. Major areas of device physics and processing are described and illustrated with Simulations. The material in this book is a result of several years of work on the implemen­ tation of the simulation system, the refinement of physical models in the simulation programs, and the application of the programs to many cases of device developments. The text began as publications in journals and con­ ference proceedings, as weil as lecture notes for a Hewlett-Packard internal CAD course. This book consists of two parts. It begins with an overview of the status of CAD in VLSI, which pointsout why CAD is essential in VLSI development. Part A presents the organization of the two-dimensional simulation system.

• VLSI
• circuit
• computer
• computer-aided design (CAD)
• integrated circuit
• material
• physics
• semiconductor
• simulation

• Hewlett-Packard Laboratories, USA

  Kit Man Cham, Soo-Young Oh, John L. Moll

• IBM—Thomas J. Watson Research Center, USA

  Daeje Chin

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