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Plasma Charging Damage

  • Book
  • © 2001

Overview

Authors:
  1. Kin P. Cheung

    1. Lucent Technologies, Bell Laboratories, Murray Hill, USA

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  • The only book of its kind - the only competition on subject matter comes from a Japanese language text to which this author is also a contributor
  • It is neither as coherent nor as comprehensive as the current text
  • The books readership runs the whole gamut of experience in the subject
  • The author works at AT&T's Bell Laboratories in New Jersey
  • This laboratory is a world leader in many areas of technology

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Table of contents (7 chapters)

  1. Front Matter

    Pages i-xii
    Download chapter PDF

  2. Thin Gate-oxide Wear-out and Breakdown

    • Kin P. Cheung
    Pages 1-45

  3. Mechanism of Plasma Charging Damage I

    • Kin P. Cheung
    Pages 47-97

  4. Mechanism of Plasma Charging Damage II

    • Kin P. Cheung
    Pages 99-167

  5. Mechanism of Plasma Charging Damage III

    • Kin P. Cheung
    Pages 169-204

  6. Charging Damage Measurement I — Determination of Plasma’s Ability to Cause Damage

    • Kin P. Cheung
    Pages 205-244

  7. Charging Damage Measurement II — Direct Measurement of Damage

    • Kin P. Cheung
    Pages 245-310

  8. Coping with Plasma Charging Damage

    • Kin P. Cheung
    Pages 311-341

  9. Back Matter

    Pages 343-346
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Keywords

About this book

In the 50 years since the invention of transistor, silicon integrated circuit (IC) technology has made astonishing advances. A key factor that makes these advances possible is the ability to have precise control on material properties and physical dimensions. The introduction of plasma processing in pattern transfer and in thin film deposition is a critical enabling advance among other things. In state of the art silicon Ie manufacturing process, plasma is used in more than 20 different critical steps. Plasma is sometimes called the fourth state of matter (other than gas, liquid and solid). It is a mixture of ions (positive and negative), electrons and neutrals in a quasi-neutral gaseous steady state very far from equilibrium, sustained by an energy source that balances the loss of charged particles. It is a very harsh environment for the delicate ICs. Highly energetic particles such as ions, electrons and photons bombard the surface of the wafer continuously. These bombardments can cause all kinds of damage to the silicon devices that make up the integrated circuits.

Authors and Affiliations

  • Lucent Technologies, Bell Laboratories, Murray Hill, USA

    Kin P. Cheung

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