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Ultra-Low Voltage Nano-Scale Memories

  • Book
  • © 2007

Overview

  • Discusses the emerging problems between the device, circuit, and system levels in terms of reliable high-speed operations of memory cells and peripheral logic circuits
  • Presents the essential differences in ultra-low voltage operations between DRAMs and SRAMs
  • Covers the basics to the state of the art

Part of the book series: Integrated Circuits and Systems (ICIR)

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Table of contents (9 chapters)

Keywords

About this book

Ultra-Low Voltage Nano-Scale Memories provides an in-depth discussion of the state-of-the-art nanometer and sub-1-V memory LSIs that are playing decisive roles in power conscious systems. Emerging problems between the device, circuit, and system levels are systematically covered in terms of reliable high-speed operations of memory cells and peripheral logic circuits. The effectiveness of solutions at device and circuit levels is also described at length through clarifying noise components in an array, and even essential differences in ultra-low voltage operations between DRAMs and SRAMs. Moreover, various kinds of on-chip voltage converters necessary to solve problems with internal power-supply managements are extensively discussed. This authoritative monograph addresses these design challenges for memory and circuit engineers as well as for researchers and students who are interested in ultra-low voltage nano-scale memory LSIs.

Editors and Affiliations

  • Hitachi, Ltd, Tokyo, Japan

    Kiyoo Itoh

  • Renesas Technology Corp, Tokyo, Japan

    Masashi Horiguchi

  • Hitachi ULSI Systems Co., Ltd, Tokyo, Japan

    Hitoshi Tanaka

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