Overview
- Editors:
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Norbert H. Nickel
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Hahn-Meitner-Institut Berlin, Germany
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Evgenii Terukov
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A.F. Ioffe Physico-Technical Institute, St. Petersburg, Russia
- Latest research results on the fabrication and fundamental understanding of ZnO and ZnO based devices
- ZnO bulk and layer growth of undoped and p-type doped material, influence of impurities (oxygen, hydrogen, transition metals) on electrical and optical properties
- New emerging applications such as transparent electronics
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Table of contents (20 papers)
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ZnO Bulk and Layer Growth
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- Robert Triboulet, Vicente Munoz-Sanjosé, Ramon Tena-Zaera, Mari Carmen Martinez-Tomas, Saïd Hassani
Pages 3-14
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- A. Kh. Abduev, A. Sh. Asvarov, A. K. Akhmedov, I. K. Kamilov, S. N. Sulyanov
Pages 15-24
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- M. B. Kotlyarevsky, I. V. Rogozin, A. V. Marakhovsky
Pages 25-34
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Electrical, Optical, and Structural Properties
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- David C. Look, Bruce B. Claflin, Gene Cantwell, Seong-Ju Park, Gary M. Renlund
Pages 37-46
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- M. Grundmann, H. von Wenckstern, R. Pickenhain, S. Weinhold, B. Chengnui, O. Breitenstein
Pages 47-57
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- V. A. Karpina, V. D. Khranovskyy, V. I. Lazorenko, G. V. Lashkarev, I. V. Blonsky, V. A. Baturin
Pages 59-68
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- Thomas Nobis, Evgeni M. Kaidashev, Andreas Rahm, Michael Lorenz, Marius Grundmann
Pages 83-98
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- E. Müller, D. Livinov, D. Gerthsen, C. Kirchner, A. Waag, N. Oleynik et al.
Pages 99-111
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Role of Hydrogen
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- M. D. McCluskey, S. J. Jokela
Pages 125-132
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- E. V. Lavrov, F. Börrnert, J. Weber
Pages 133-144
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Fundamental Properties
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- A.V. Rodina, M. Strassburg, M. Dworzak, U. Haboeck, A. Hoffmann, H. R. Alves et al.
Pages 159-170
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- V. Val. Sobolev, V. V. Sobolev
Pages 171-182
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Device Applications
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- E. V. Kalinina, A. E. Cherenkov, G. A. Onushkin, Ya. I. Alivov, D. C. Look, B. M. Ataev et al.
Pages 211-216
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About this book
Recently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requirements of state-of-the-art applications but also by the lack of a fundamental understanding of growth processes, the role of intrinsic defects and dopants, and the properties of hydrogen. The NATO Advanced Research Workshop on “Zinc oxide as a material for micro- and optoelectronic applications”, held from June 23 to June 25 2004 in St. Petersburg, Russia, was organized accordingly and started with the growth of ZnO. A variety of growth methods for bulk and layer growth were discussed. These techniques comprised growth methods such as closed space vapor transport (CSVT), metal-organic chemical vapor deposition, reactive ion sputtering, and pulsed laser deposition. From a structural point of view using these growth techniques ZnO can be fabricated ranging from single crystalline bulk material to polycrystalline ZnO and nanowhiskers. A major aspect of the ZnO growth is doping. n-type doping is relatively easy to accomplish with elements such al Al or Ga. At room temperature single crystal ZnO exhibits a resistivity of about 0. 3 -cm, an electron mobility of 2 17 -3 225 cm /Vs, and a carrier concentration of 10 cm . In n-type ZnO two shallow donors are observable with activation energies of 30 – 40 meV and 60 – 70 meV.
Editors and Affiliations
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Hahn-Meitner-Institut Berlin, Germany
Norbert H. Nickel
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A.F. Ioffe Physico-Technical Institute, St. Petersburg, Russia
Evgenii Terukov
