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  • Book
  • © 2009

Device Applications of Silicon Nanocrystals and Nanostructures

  • Offers the first comprehensive treatment of recent advances in quantum-sized silicon device technology
  • Presents systematic and vivid descriptions from a technological viewpoint, providing a realistic perspective on forthcoming silicon device concepts in the post-scaling era
  • Shows how silicon nanocrystal technology is fundamental to the future of silicon electronics, optoelectronics, and photonics
  • Reviews optimal strategies for developing the next generation of devices for microelectronics, photonics, acoustics, and biology
  • Includes supplementary material: sn.pub/extras

Part of the book series: Nanostructure Science and Technology (NST)

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Table of contents (11 chapters)

  1. Front Matter

    Pages i-xii
  2. Si-Rich Dielectrics for Active Photonic Devices

    • L. C. Kimerling, L. Dal Negro, M. Stolfi, J. H. Yi, J. Michel, X. Duan et al.
    Pages 1-24
  3. Nanocrystalline Si EL Devices

    • B. Gelloz, N. Koshida
    Pages 25-70
  4. Surface and Superlattice

    • Rabah Boukherroub
    Pages 71-102
  5. Silicon Single-Electron Devices

    • Yasuo Takahashi, Yukinori Ono, Akira Fujiwara, Katsuhiko Nishiguchi, Hiroshi Inokawa
    Pages 125-172
  6. Room Temperature Silicon Spin-Based Transistors

    • M. Cahay, S. Bandyopadhyay
    Pages 173-194
  7. Electron Transport in Nanocrystalline Silicon

    • H. Mizuta, S. Uno, N. Mori, S. Oda, N. Koshida
    Pages 197-221
  8. Silicon Nanocrystal Nonvolatile Memories

    • R. Muralidhar, M. A. Sadd, B. E. White Jr
    Pages 223-249
  9. Nanocrystalline Silicon Ballistic Electron Emitter

    • Takuya Komoda, N. Koshida
    Pages 251-291
  10. Porous Silicon Optical Label-Free Biosensors

    • Philippe M. Fauchet
    Pages 293-323
  11. Ultrasonic Emission from Nanocrystalline Porous Silicon

    • Hiroyuki Shinoda*, Nobuyoshi Koshida
    Pages 325-335
  12. Back Matter

    Pages 337-344

About this book

Recent developments in the technology of silicon nanocrystals and silicon nanostructures, where quantum-size effects are important, are systematically described including examples of device applications. Due to the strong quantum confinement effect, the material properties are freed from the usual indirect- or direct-bandgap regime, and the optical, electrical, thermal, and chemical properties of these nanocrystalline and nanostructured semiconductors are drastically changed from those of bulk silicon. In addition to efficient visible luminescence, various other useful material functions are induced in nanocrystalline silicon and periodic silicon nanostructures. Some novel devices and applications, in fields such as photonics (electroluminescence diode, microcavity, and waveguide), electronics (single-electron device, spin transistor, nonvolatile memory, and ballistic electron emitter), acoustics, and biology, have been developed by the use of these quantum-induced functions in ways different from the conventional scaling principle for ULSI.

Editors and Affiliations

  • Department of Electrical & Electronic Engineering, Tokyo University of Agriculture and Technology, Tokyo, Japan

    Nobuyoshi Koshida

Bibliographic Information

Buy it now

Buying options

eBook USD 89.00
Price excludes VAT (USA)
  • Available as EPUB and PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book USD 119.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book USD 169.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Other ways to access