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Fundamental Properties of Semiconductor Nanowires

  • Book
  • © 2021

Overview

Editors:
  1. Naoki Fukata

    1. National Institute for Materials Science, Tsukuba, Japan

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    You can also search for this editor in PubMed   Google Scholar

  2. Riccardo Rurali

    1. CSIC, Institut de Ciència de Materials de Barc CSIC, Bellaterra, Spain

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    You can also search for this editor in PubMed   Google Scholar

  • Provides detailed coverage of virtually all aspects of nanowires, from growth to applications
  • Includes thorough explanations of nanowires’ growth mechanism and functionalization
  • Offers readers a comprehensive understanding of the fundamental properties and applications of nanowires

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Table of contents (10 chapters)

  1. Front Matter

    Pages i-viii
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  2. Growth

    1. Front Matter

      Pages 1-1
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    2. Vapor–Liquid–Solid Growth of Semiconductor Nanowires

      • Vladimir G. Dubrovskii, Frank Glas
      Pages 3-107

  3. Functionalization

    1. Front Matter

      Pages 109-109
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    2. Surface Functionalization of III–V Nanowires

      • Rainer Timm, Anders Mikkelsen
      Pages 111-141

    3. Impurity Doping in Semiconductor Nanowires

      • Naoki Fukata
      Pages 143-181

  4. Characterization

    1. Front Matter

      Pages 183-183
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    2. X-ray Methods for Structural Characterization of III-V Nanowires: From an ex-situ Ensemble Average to Time-resolved Nano-diffraction

      • Ludwig Feigl, Philipp Schroth
      Pages 185-250

    3. Characterisation of Semiconductor Nanowires by Electron Beam Induced Microscopy and Cathodoluminescence

      • Maria Tchernycheva, Gwénolé Jacopin, Valerio Piazza
      Pages 251-288

    4. Photoluminescence Spectroscopy Applied to Semiconducting Nanowires: A Valuable Probe for Assessing Lattice Defects, Crystal Structures, and Carriers’ Temperature

      • Davide Tedeschi, Marta De Luca, Antonio Polimeni
      Pages 289-306

    5. Addressing Crystal Structure in Semiconductor Nanowires by Polarized Raman Spectroscopy

      • Claudia Fasolato, Ilaria Zardo, Marta De Luca
      Pages 307-348

    6. Theoretical Aspects of Point Defects in Semiconductor Nanowires

      • Riccardo Rurali, Maurizia Palummo, Xavier Cartoixà
      Pages 349-367

  5. Applications

    1. Front Matter

      Pages 369-369
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    2. Nanowire Field-Effect Transistors

      • Junichi Motohisa, Shinjiro Hara
      Pages 371-431

    3. InP/InAs Quantum Heterostructure Nanowires Toward Telecom-Band Nanowire Lasers

      • Guoqiang Zhang, Kouta Tateno, Takehiko Tawara, Hideki Gotoh
      Pages 433-454
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Keywords

About this book

This book covers virtually all aspects of semiconductor nanowires, from growth to related applications, in detail. First, it addresses nanowires’ growth mechanism, one of the most important topics at the forefront of nanowire research. The focus then shifts to surface functionalization: nanowires have a high surface-to-volume ratio and thus are well-suited to surface modification, which effectively functionalizes them. The book also discusses the latest advances in the study of impurity doping, a crucial process in nanowires. In addition, considerable attention is paid to characterization techniques such as nanoscale and in situ methods, which are indispensable for understanding the novel properties of nanowires. Theoretical calculations are also essential to understanding nanowires’ characteristics, particularly those that derive directly from their special nature as one-dimensional nanoscale structures. In closing, the book considers future applications of nanowire structures indevices such as FETs and lasers.

Editors and Affiliations

  • National Institute for Materials Science, Tsukuba, Japan

    Naoki Fukata

  • CSIC, Institut de Ciència de Materials de Barc CSIC, Bellaterra, Spain

    Riccardo Rurali

About the editors

Naoki Fukata is Leader of the Nanostructured Semiconducting Materials Group, International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Japan. Holding a Ph.D. in Engineering from the University of Tsukuba, he has served as an Associate Professor at Tohoku University and then as a Lecturer at the University of Tsukuba; he has been working at the NIMS since 2005. He has published 160 articles in internationally respected journals such as Advanced Materials, Nano Letters, ACS NANO, Nano Energy, Physical Review Letters, and Physical Review B, and contributed to two books. His research group focuses on the functionalization of semiconducting nanomaterials such as nanowires for applications in next-generation high-speed transistors and high-efficiency solar cells.




Riccardo Rurali received his Ph.D. from the Universitat Autònoma de Barcelona in 2003. His research interests focuson the theoretical modeling of nanostructured semiconductors using various computational techniques, particularly with regard to their structural, electronic, and thermal properties. He is currently a tenured scientist at the Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), where he has also served as Deputy Director since 2015. He is the author of more than 100 articles published in internationally respected journals such as Science, Nature Nanotechnology, Nano Letters, ACS Nano, Advanced Materials and Physical Review Letters.

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