Overview
- Nominated as an outstanding Ph.D thesis by the Department of Physics at The University of Tokyo
- Describes cutting-edge experiments probing electronic phase transitions controlled by high pressure and magnetic field
- Includes more than 50 color figures to aid readers’ understanding
Part of the book series: Springer Theses (Springer Theses)
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Table of contents (6 chapters)
Keywords
- Narrow-Gap Semiconductor and Semimetal
- Semimetallic Black Phosphorus
- Pressured Lead Telluride
- Quantum Oscillations in Pulsed Magnetic Field
- Spin-Split Quantum Oscillations
- Shubnikov-de Haas Oscillation
- Magneto-Phonon Resonance Measurment
- Pressure-Induced Semiconductor-Semimetal Transition
- Extremely Large Positive Magnetoresistance
About this book
This book discusses the latest investigations into the electronic structure of narrow-gap semiconductors in extreme conditions, and describes in detail magnetic field and pressure measurements using two high-quality single crystals: black phosphorus (BP) and lead telluride (PbTe).
The book presents two significant findings for BP and PbTe. The first is the successful demonstration of the pressure-induced transition from semiconductor to semimetal in the electronic structure of BP using magnetoresistance measurements. The second is the quantitative estimation of how well the Dirac fermion description works for electronic properties in PbTe.
The overviews on BP and PbTe from the point of view of material properties help readers quickly understand the typical electronic character of narrow-gap semiconductor materials, which has recently attracted interest in topological features in condensed matter physics. Additionally the introductory review of the principles and methodology allows readers to understand the high magnetic field and pressure experiments.
Authors and Affiliations
About the author
Kazuto Akiba has been an Assistant Professor at Okayama University since April 2018. His work mainly involves experimental investigation of the physical properties of materials under extreme conditions (high pressures, high magnetic fields and low temperatures). He received his Bachelor of Science from Nagoya University, and his Master and Doctor of Science from the University of Tokyo in 2013, 2015 and 2018, respectively. He received a research fellowship for young scientists from the Japan Society for the Promotion of Science (JSPS) for the period 2016 to 2018, and was awarded the School of Science Research Award (PhD) by the University of Tokyo in 2018.
Bibliographic Information
Book Title: Electronic States of Narrow-Gap Semiconductors Under Multi-Extreme Conditions
Authors: Kazuto Akiba
Series Title: Springer Theses
DOI: https://doi.org/10.1007/978-981-13-7107-3
Publisher: Springer Singapore
eBook Packages: Physics and Astronomy, Physics and Astronomy (R0)
Copyright Information: Springer Nature Singapore Pte Ltd. 2019
Hardcover ISBN: 978-981-13-7106-6Published: 15 April 2019
eBook ISBN: 978-981-13-7107-3Published: 04 April 2019
Series ISSN: 2190-5053
Series E-ISSN: 2190-5061
Edition Number: 1
Number of Pages: XXIV, 147
Number of Illustrations: 35 b/w illustrations, 56 illustrations in colour
Topics: Semiconductors, Optical and Electronic Materials, Surface and Interface Science, Thin Films, Characterization and Evaluation of Materials, Solid State Physics