Overview
- Provides useful guidance on developing high sensitivity and linearity, fast-response Si.
- C sensing devices
Part of the book series: SpringerBriefs in Applied Sciences and Technology (BRIEFSAPPLSCIENCES)
Access this book
Tax calculation will be finalised at checkout
Other ways to access
Table of contents (7 chapters)
-
Front Matter
Keywords
About this book
This book presents the fundamentals of the thermoelectrical effect in silicon carbide (SiC), including the thermoresistive, thermoelectric, thermocapacitive and thermoelectronic effects. It summarizes the growth of SiC, its properties and fabrication processes for SiC devices and introduces the thermoelectrical sensing theories in different SiC morphologies and polytypes. Further, it reviews the recent advances in the characterization of the thermoelectrical effect in SiC at high temperatures. Discussing several desirable features of thermoelectrical SiC sensors and recent developments in these sensors, the book provides useful guidance on developing high sensitivity and linearity, fast-response SiC sensing devices based on thermoelectrical effects.
Authors and Affiliations
Bibliographic Information
Book Title: Thermoelectrical Effect in SiC for High-Temperature MEMS Sensors
Authors: Toan Dinh, Nam-Trung Nguyen, Dzung Viet Dao
Series Title: SpringerBriefs in Applied Sciences and Technology
DOI: https://doi.org/10.1007/978-981-13-2571-7
Publisher: Springer Singapore
eBook Packages: Chemistry and Materials Science, Chemistry and Material Science (R0)
Copyright Information: The Author(s) 2018
Softcover ISBN: 978-981-13-2570-0Published: 23 October 2018
eBook ISBN: 978-981-13-2571-7Published: 05 October 2018
Series ISSN: 2191-530X
Series E-ISSN: 2191-5318
Edition Number: 1
Number of Pages: XI, 115
Number of Illustrations: 6 b/w illustrations, 60 illustrations in colour
Topics: Nanotechnology, Nanotechnology and Microengineering, Solid State Physics