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Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect

  • Book
  • © 2018

Overview

  • Nominated by Tsinghua University as an outstanding thesis in the field
  • Includes a detailed experimental analysis of the surface characterization of Cu interconnects
  • Presents advanced experimental methods for investigating Cu/Ru micro-galvanic corrosion
  • Explains the experimental results in detail

Part of the book series: Springer Theses (Springer Theses)

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Table of contents (8 chapters)

Keywords

About this book

This thesis addresses selected unsolved problems in the chemical mechanical polishing process (CMP) for integrated circuits using ruthenium (Ru) as a novel barrier layer material. Pursuing a systematic approach to resolve the remaining critical issues in the CMP, it first investigates the tribocorrosion properties and the material removal mechanisms of copper (Cu) and Ru in KIO4-based slurry. The thesis subsequently studies Cu/Ru galvanic corrosion from a new micro and in-situ perspective, and on this basis, seeks ways to mitigate corrosion using different slurry additives. The findings presented here constitute a significant advance in fundamental and technical investigations into the CMP, while also laying the groundwork for future research.

Authors and Affiliations

  • Tsinghua University , Beijing, China

    Jie Cheng

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