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Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices

  • Book
  • © 1998

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Editors:
  1. Eric Garfunkel

    1. Rutgers University, Piscataway, USA

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  2. Evgeni Gusev

    1. Rutgers University, Piscataway, USA

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  3. Alexander Vul’

    1. A.F. loffe Physico- Technical Institute of the Russian Academy of Science, St. Petersburg, Russia

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Part of the book series: NATO Science Partnership Subseries: 3 (ASHT, volume 47)

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Table of contents (37 chapters)

  1. Front Matter

    Pages i-xi
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  2. Introduction

    1. Ultrathin Dielectrics in Silicon Microelectronics

      • L C Feldman, E. P. Gusev, E. Garfunkel
      Pages 1-24

  3. Section 1. Recent advances in experimental studies of SiO2films on Si

    1. Study of the Si/SiO2 Interface Using Positrons:

      • J. M. M. De Nijs, M. Clement
      Pages 25-38

    2. Medium Energy Ion Scattering Studies of Silicon Oxidation and Oxynitridation

      • E. Garfunkel, E. P. Gusev, H. C. Lu, T. Gustafsson, M. L. Green
      Pages 39-48

    3. Synchrotron and Conventional Photoemission Studies of Oxides and N20 Oxynitrides

      • Z. H. Lu
      Pages 49-63

    4. Stress in The SiO2/Si Structures Formed by Thermal Oxidation

      • A. Szekeres
      Pages 65-78

  4. Section 2. Theory of the SiO2/Si and SiOxNy/Si systems

    1. Modelling the Oxide and the Oxidation Process

      • A M Stoneham, C J Sofield
      Pages 79-88

    2. Core-Level Shifts in Si(001)-SiO2 Systems: The Value of First-Principle Investigations

      • Alfredo Pasquarello, Mark S. Hybertsen, G.-M. Rignanese, Roberto Car
      Pages 89-102

    3. A Simple Model of the Chemical Nature of Bonds at the Si—SiO2 Interface and its Influence on the Electronic Properties of MOS Devices

      • Hisham Z. Massoud
      Pages 103-116

    4. Chemical Perspectives on Growth and Properties of Ultrathin SiO2 Layers

      • G. F. Cerofolini, N. Re
      Pages 117-129

    5. A theoretical model of the Si/SiO2 interface

      • A. Markovits, C. Minot
      Pages 131-145

  5. Section 3: Growth mechanism, processing, and analysis of (oxy)nitridation

    1. Spatially-Selective Incorporation of Bonded-Nitrogen into Ultra-Thin Gate Dielectrics by Low-Temperature Plasma-Assisted Processing

      • Gerald Lucovsky
      Pages 147-164

    2. Isotopic Labeling Studies of Oxynitridation in Nitric Oxide (NO) of Si and SiO2

      • I. Trimaille, J.-J. Ganem, L. G. Gosset, S. Rigo, I. J. R. Baumvol, F. C. Stedile et al.
      Pages 165-179

    3. Thermal Routes to Ultrathin Oxynitrides

      • M. L. Green, D. Brasen, L. C. Feldman, E. Garfunkel, E. P. Gusev, T. Gustafsson et al.
      Pages 181-190

    4. Nitrogen in Ultra Thin Dielectrics

      • H. B. Harrison, H.-F. Li, S. Dimitrijev, P. Tanner
      Pages 191-215

    5. Endurance of EEPROM-Cells Using Ultrathin NO and NH3 Nitrided Tunnel Oxides

      • A. Mattheus, A. Gschwandtner, G. Innertsberger, A. Grassl, A. Talg
      Pages 217-226

    6. Effects of the Surface Deposition of Nitrogen on the Oxidation of Silicon

      • T. D. M. Salgado, I. J. R. Baumvol, C. Radtke, C. Krug, F. C. Stedile
      Pages 227-240
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Keywords

About this book

An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of <3 nm will be required in the near future. Given the importance of ultrathin gate dielectrics, well-focused basic scientific research and aggressive development programs must continue on the silicon oxide, oxynitride, and high K materials on silicon systems, especially in the critical, ultrathin 1-3 nm regime. The main thrust of the present book is a review, at the nano and atomic scale, the complex scientific issues related to the use of ultrathin dielectrics in next-generation Si-based devices. The contributing authors are leading scientists, drawn from academic, industrial and government laboratories throughout the world, and representing such backgrounds as basic and applied physics, chemistry, electrical engineering, surface science, and materials science.
Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.

Editors and Affiliations

  • Rutgers University, Piscataway, USA

    Eric Garfunkel, Evgeni Gusev

  • A.F. loffe Physico- Technical Institute of the Russian Academy of Science, St. Petersburg, Russia

    Alexander Vul’

Bibliographic Information

  • Book Title: Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices

  • Editors: Eric Garfunkel, Evgeni Gusev, Alexander Vul’

  • Series Title: NATO Science Partnership Subseries: 3

  • DOI: https://doi.org/10.1007/978-94-011-5008-8

  • Publisher: Springer Dordrecht

  • eBook Packages: Springer Book Archive

  • Copyright Information: Springer Science+Business Media Dordrecht 1998

  • Hardcover ISBN: 978-0-7923-5007-1Published: 31 March 1998

  • Softcover ISBN: 978-0-7923-5008-8Published: 31 March 1998

  • eBook ISBN: 978-94-011-5008-8Published: 06 December 2012

  • Series ISSN: 1388-6576

  • Edition Number: 1

  • Number of Pages: XI, 507

  • Number of Illustrations: 114 b/w illustrations

  • Topics: Optical and Electronic Materials, Surfaces and Interfaces, Thin Films

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