Perspectives, Science and Technologies for Novel Silicon on Insulator Devices

1. Front Matter

   Pages i-xxii

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2. Innovations in Materials Technologies

   1. Smart-Cut® Technology: Basic Mechanisms and Applications

      • Michel Bruel

      Pages 1-15

   2. Polish Stop Technology for Silicon on Silicide on Insulator Structures

      • H. S. Gamble

      Pages 17-28

   3. Homoepitaxy on Porous Silicon with a Buried Oxide Layer: Full-Wafer Scale SOI

      • S. I. Romanov, A. V. Dvurechenskii, V. V. Kirienko, R. Grötzschel, A. Gutakovskii, L. V. Sokolov et al.

      Pages 29-46

   4. Structural and Electrical Properties of Silicon on Isolator Structures Manufactured on FZ- and CZ-Silicon by Smart-Cut Technology

      • V. P. Popov, I. V. Antonova, V. F. Stas, L. V. Mironova, E. P. Neustroev, A. Gutakovskii et al.

      Pages 47-54

   5. Development of Linear Sequential Lateral Solidification Technique to Fabricate Quasi-Single-Crystal Super-Thin Si Films for High-Performance Thin Film Transistor Devices

      • A. B. Limanov, V. M. Borisov, A. Yu. Vinokhodov, A. I. Demin, A. I. El’tsov, Yu. B. Kirukhin et al.

      Pages 55-61

3. Economics and Innovation Applications

   1. Low Temperature Polysilicon Technology: A low cost SOI technology?

      • F. Plais, C. Collet, O. Huet, P. Legagneux, D. Pribat, C. Reita et al.

      Pages 63-74

   2. A Novel Low Cost Process for the Production of Semiconductor Polycrystalline Silicon from Recycled Industrial Waste

      • B. N. Mukashev, M. F. Tamendarov, B. Beketov, S. Zh. Tokmoldin

      Pages 75-84

   3. Tetrahedrally Bonded Amorphous Carbon for Electronic Applications

      • W. I. Milne

      Pages 85-96

   4. Diamond Based Silicon-on-Insulator Materials and Devices

      • Stefan Bengtsson, Mats Bergh

      Pages 97-107

   5. Low-Temperature Processing of Crystalline Si Films on Glass for Electronic Applications

      • R. B. Bergmann, T. J. Rinke, L. Oberbeck, R. Dassow

      Pages 109-120

   6. β-SiC on SiO2 Formed by ION Implantation and Bonding for Micromechanics Applications

      • C. Serre, A. Pérez-Rodríguez, A. Romano-Rodríguez, J. R. Morante, L. Fonseca, M. C. Acero et al.

      Pages 121-126

   7. Laser Recrystallized Polysilicon Layers for Sensor Application: Electrical and Piezoresistive Characterization

      • A. A. Druzhinin, I. I. Maryamova, E. N. Lavitska, Y. M. Pankov, I. T. Kogut

      Pages 127-135

4. Characterisation Methods for SOI

   1. Optical Spectroscopy of SOI Materials

      • Alejandro Pérez-Rodríguez, Christophe Serre, Joan Ramón Morante

      Pages 137-148

   2. Computer Simulation of Oxygen Redistribution in SOI Structures

      • V. G. Litovchenko, A. A. Efremov

      Pages 149-161

   3. Electrical Instabilities in Silicon-on-Insulator Structures and Devices During Voltage and Temperature Stressing

      • A. N. Nazarov, I. P. Barchuk, V. I. Kilchytska

      Pages 163-178

   4. Hydrogen as a Diagnostic Tool in Analysing SOI Structures

      • A. Boutry-Forveille, A. Nazarov, D. Ballutaud

      Pages 179-186

   5. Back Gate Voltage Influence on the LDD SOI NMOSFET Series Resistance Extraction from 150 to 300 K

      • A. S. Nicolett, J. A. Martino, E. Simoen, C. Claeys

      Pages 187-193

   6. Characterization of Porous Silicon Layers Containing A Buried Oxide Layer

      • S. I. Romanov, A. V. Dvurechenskii, Yu. I. Yakovlev, R. Grötzschel, U. Kreissig, V. V. Kirienko et al.

      Pages 195-204

   7. Total-Dose Radiation Response of Multilayer Buried Insulators

      • A. N. Rudenko, V. S. Lysenko, A. N. Nazarov, I. P. Barchuk, V. I. Kilchytska, T. E. Rudenko et al.

      Pages 205-212

This proceedings volume contains the contributions of the speakers who attended the NATO Advanced Research Workshop on "Perspectives, Science and Technologies for Novel Silicon on Insulator Devices" held at the Sanatorium Pushcha OLema, Kyiv, th Ukraine from It" to 15 October 1998. This meeting was the second NATO Silicon on Insulator (SOl) Workshop to be held in st the Ukraine where the first meeting (Gurzuf, Crimea, 1 to 4th November 1994) focussed upon the physical and technical problems to be addressed in order to exploit the advantages of incorporating SOl materials in device and sensor technologies. On this occasion emphasis was placed upon firstly, promoting the use of SOl substrates for a range of novel device and circuit applications and secondly, addressing the economic issues of incorporating SOl processing technologies and device technologies within the framework of the resources available within the laboratories and factories of the Newly Independent States (NIS). The primary goal of both workshops has been the breaking of the barriers that inhibit closer collaboration between scientists and engineers in the NATO countries and the NIS. Indeed, it was a pleasure for attendees at the first meeting to renew acquaintances and for the first time attendees to make new contacts and enjoy the warm hospitality offered by our hosts in Kyiv. An outcome was the forging of new links and concrete proposals for future collaborations.

• CMOS
• Laser
• Sensor
• Transistor
• development
• electronics
• field-effect transistor
• metal oxide semiconductur field-effect transistor
• microelectromechanical system (MEMS)
• modeling
• simulation
• static-induction transistor
• thin film
• thin film transistor

• University of Surrey, Guildford, Surrey, UK

  Peter L. F. Hemment

• Institute of Semiconductor Physics, Kyiv, Ukraine

  V. S. Lysenko, A. N. Nazarov

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