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Semiconductor Interfaces at the Sub-Nanometer Scale

  • Book
  • © 1993

Overview

Editors:
  1. H. W. M. Salemink

    1. IBM Research Division, Zurich Research Laboratory, Rüschlikon, Switzerland

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    You can also search for this editor in PubMed   Google Scholar

  2. M. D. Pashley

    1. Philips Laboratories, Briarcliff Manor, New York, USA

    View editor publications

    You can also search for this editor in PubMed   Google Scholar

Part of the book series: NATO Science Series E: (NSSE, volume 243)

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Table of contents (25 chapters)

  1. Front Matter

    Pages i-xi
    Download chapter PDF

  2. Epitaxial Growth of Semiconductors

    1. Surface Atomic Processes during Epitaxial Growth

      • Y. Horikoshi, M. Kawashima, H. Yamaguchi, M. Sato
      Pages 1-10

    2. Formation Mechanism of CuPt-Type Sublattice Ordering for III-III-V Type Compound Semiconductors

      • T. Suzuki, A. Gomyo
      Pages 11-24

    3. Surface Chemistry in the Si/Ge GSMBE system studied using RHEED

      • Scott M. Mokler
      Pages 25-33

    4. Diffusion of Si in δ-Doped GaAs Studied by Magneto Transport

      • P. M. Koenraad, I. Bársony, J. C. M. Henning, J. A. A. P. Perenboom, J. H. Wolter
      Pages 35-43

    5. Theory of Atomic-Scale Processes during Epitaxial Growth: Current Status

      • Dimitri D. Vvedensky
      Pages 45-55

    6. A Comparison of Growth by Molecular Beam Epitaxy, Metalorganic Chemical Vapour Deposition and Chemical Beam Epitaxy

      • C. T. Foxon
      Pages 57-61

    7. The Role of Surface Reconstructions in MBE Growth of GaAs

      • M. D. Pashley, K. W. Haberern
      Pages 63-73

    8. A Lattice Gas Analysis of Binary Alloys on a Tetrahedral Lattice

      • M. C. Yalabik, A. KabakçioÄŸlu
      Pages 75-81

    9. Resonant Tunnelling via the Bound States of Shallow Donors

      • J-W Sakai, P. H. Beton, M. Henini, P. C. Main, L. Eaves, G. Hill
      Pages 83-88

  3. Electronic Properties of Semiconductor Interfaces

    1. Engineering of Semiconductor Heterostructures by Ultrathin Control Layers

      • A. Baldereschi, R. Resta, M. Peressi, S. Baroni, K. Mäder
      Pages 89-103

    2. Interface Chemical Structure, Band Offsets and Optical Properties of Various III-V Compounds Heterostructures

      • J. P. Landesman, J. Nagle, J. C. Garcia, C. Mottet, M. Larive, J. Massies et al.
      Pages 105-113

    3. Dipole Layers at GaAs Heterojunctions and their Investigation

      • R. H. Williams, T. H. Shen, S. Hooper
      Pages 115-120

    4. Clustering and Correlations on GaAs — Metal Interface

      • O. Pankratov, M. Scheffler
      Pages 121-126

  4. Atomic Scale Analysis of Semiconductor Interfaces

    1. Cross-Sectional Scanning Tunneling Microscopy of GaAs Doping Superlattices: Pinned vs. Unpinned Surfaces

      • R. M. Feenstra, A. Vaterlaus, E. T. Yu, P. D. Kirchner, C. L. Lin, J. M. Woodall et al.
      Pages 127-137

    2. Semiconductor Interfaces: Structure, Properties and Processing at the Atomic Level

      • A. Ourmazd
      Pages 139-149

    3. Epitaxial Interfaces of III-V Heterostructures: Atomic Resolution, Composition Fluctuations and Doping

      • H. W. M. Salemink, M. B. Johnson, U. Maier, P. Koenraad, O. Albrektsen
      Pages 151-160

  5. Group IV Materials

    1. Group IV Strained Layer Systems

      • E. Kasper
      Pages 161-171

    2. Misfit Accommodation During Heteroepitaxial Growth

      • M. Henzler
      Pages 173-180

    3. Smear-out of the Ge/Si Interface in Gas Source MBE Monitored by Rheed

      • K. Werner, S. Butzke, P. F. A. Alkemade, S. Radelaar, J. Trommel, P. Balk et al.
      Pages 181-189
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Keywords

About this book

The Advanced Research Workshop on the Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale was held from 31 August to 2 September, 1992, in Riva del Garda. Italy. The aim of the workshop was to bring together experts in different aspects of the study of semiconductor interfaces and in small-scale devices where the interface properties can be very significant It was our aim that this would help focus research of the growth and characterization of semiconductor interfaces at the atomic scale on the issues that will have the greatest impact on devices of the future. Some 30 participants from industrial and academic research institutes and from 11 countries contributed to the workshop with papers on their recent wode. . 'There was ample time for discussion after each talk. as well as a summary discussion at the end of the meeting. The major themes of the meeting are described below. The meeting included several talks relating to the different growth techniques used in heteroepitaxial growth of semiconductors. Horikoshi discussed the atomistic processes involved in MBE, MEE and MOCVD, presenting results of experimental RHEED and photoluminescence measurements; Foxon compared the merits of MBE, MOCVD, and eBE growth; Molder described RHEED studies of Si/Ge growth by GSMBE, and Pashley discussed the role of surface reconstructions in MBE growth as seen from STM studies on GaAs. On the theoretical side, Vvedensky described several different methods to model growth: molecular dynamics, Monte Carlo techniques, and analytic modeling.

Editors and Affiliations

  • IBM Research Division, Zurich Research Laboratory, Rüschlikon, Switzerland

    H. W. M. Salemink

  • Philips Laboratories, Briarcliff Manor, New York, USA

    M. D. Pashley

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