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Scanning Tunneling Microscopy

  • Book
  • © 1993

Overview

Editors:
  1. H. Neddermeyer

    1. Institut für Experimentalphysik, Ruhr-Universität Bochum, Germany

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Part of the book series: Perspectives in Condensed Matter Physics (PCMP, volume 6)

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Table of contents (42 chapters)

  1. Front Matter

    Pages i-xi
    Download chapter PDF

  2. Surface Studies by Scanning Tunneling Microscopy

    • G. Binning, H. Rohrer, Ch. Gerber, E. Weibel
    Pages 31-35

  3. 7 × 7 Reconstruction on Si(111) Resolved in Real Space

    • G. Binnig, H. Rohrer, Ch Gerber, E. Weibel
    Pages 36-39

  4. Scanning tunneling microscopy

    • G. Binning, H. Rohrer
    Pages 40-54

  5. Atomic Force Microscope

    • G. Binnig, C. F. Quate, Ch Gerber
    Pages 55-58

  6. Theory of the scanning tunneling microscope

    • J. Tersoff, D. R. Hamann
    Pages 59-67

  7. Voltage dependence of the tunnelling current: an exact expression

    • Claudine Noguera
    Pages 68-74

  8. Theory of Single-Atom lmaging in the Scanning Tunneling Microscope

    • N. D. Lang
    Pages 75-78

  9. Scanning tunneling microscope combined with a scanning electron microscope

    • Ch Gerber, G. Binnig, H. Fechs, O. Marti, H. Rohrer
    Pages 79-82

  10. A simplified scanning tunneling microscope for surface science studies

    • J. E. Demuth, R. J. Hamers, R. M. Tromp, M. E. Welland
    Pages 83-86

  11. Mono-atomic tips for scanning tunneling microscopy

    • Hans-Werner Fink
    Pages 87-92

  12. Tunneling Spectroscopy and Inverse Photoemission: Image and Field States

    • G. Binnig, K. H. Frank, H. Fuchs, N. Garcia, B. Reihl, H. Rohrer et al.
    Pages 93-96

  13. Surface Electronic Structure of Si(111)-(7 × 7) Resolved in Real Space

    • R. J. Hamers, R. M. Tromp, J. E. Demuth
    Pages 97-100

  14. Voltage-dependent scanning tunneling microscopy imaging of semiconductor surfaces

    • Joseph A. Stroscio, R. M. Feenstra, D. M. Newns, A. P. Fein
    Pages 101-109

  15. Atomic-Resolution Imaging of Close-Packed Metal Surfaces by Scanning Tunneling Microscopy

    • J. Wintterlin, J. Wiechers, H. Brune, T. Gritsch, H. Höfer, R. J. Behm
    Pages 110-113

  16. Determination of atom positions at stacking-fault dislocations on Au(111) by scanning tunneling microscopy

    • Ch Wöll, S. Chiang, R. J. Wilson, P. H. Lippel
    Pages 114-117

  17. Scanning tunneling microscopy of Si(001)

    • R. J. Hamers, R. M. Tromp, J. E. Demuth
    Pages 118-132

  18. Electronic Structure of Localized Si Dangling-Bond Defects by Tunneling Spectroscopy

    • R. J. Hamers, J. E. Demuth
    Pages 133-136

  19. Fermi-Level Pinning at the Sb/GaAs(110) Surface Studied by Scanning Tunneling Spectroscopy

    • R. M. Feenstra, P. Mårtensson
    Pages 137-140

  20. Initial Stage of Ag Condensation on Si(111) 7 × 7

    • St. Tosch, H. Neddermeyer
    Pages 141-144
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About this book

The publication entitled "Surface Studies by Scanning Tunneling Mi­ Rl croscopy" by Binnig, Rohrer, Gerber and Weibel of the IBM Research Lab­ oratory in Riischlikon in 1982 immediately raised considerable interest in the sur­ face science community. It was demonstrated in Reference R1 that images from atomic structures of surfaces like individual steps could be obtained simply by scanning the surface with a sharp metal tip, which was kept in a constant distance of approximately 10 A from the sample surface. The distance control in scanning tunneling microscopy (STM) was realized by a feedback circuit, where the electri­ cal tunneling current through the potential barrier between tip and sample is used for regulating the tip position with a piezoelectric xyz-system. A similar experi­ mental approach has already been described by Young et al. for the determination l of the macroscopic roughness of a surface. A number of experimental difficulties had to be solved by the IBM group until this conceptual simple microscopic method could be applied successfully with atomic resolution. Firstly, distance and scanning control of the tip have to be operated with sufficient precision to be sensitive to atomic structures. Secondly, sample holder and tunneling unit have to be designed in such a way that external vibrations do not influence the sample-tip distance and that thermal or other drift effects become small enough during measurement of one image.

Reviews

` The selection of fields of application is impeccable, and the compilation makes very interesting reading, especially for newcomers to the field. '
Chemistry & Industry, 7 March 1994

Editors and Affiliations

  • Institut für Experimentalphysik, Ruhr-Universität Bochum, Germany

    H. Neddermeyer

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