Progress in SOI Structures and Devices Operating at Extreme Conditions

1. Front Matter

   Pages i-x

   PDF

2. Innovation in material technologies

   1. Perspectives of Simox Technology

      • Maria J. Anc

      Pages 1-10

   2. MBE Growth of the top Layer in Si/YSZ/Si Structure

      • V. G. Beshenkov, V. S. Marchenko, A. G. Znamenskii, A. F. Vyatkin, V. S. Avrutin, N. F. Izyumskaya et al.

      Pages 11-15

   3. SiCOI Structures. Technology and Characterization

      • C. Serre, A. Peréz-Rodríguez, A. Romano-Rodríguez, J. R. Morante, J. Esteve, M. C. Acero et al.

      Pages 17-29

   4. New SiC on Insulator Wafers Based on the Smart-Cut® Approach and their Potential Applications

      • J-P Joly, B. Aspar, M. Bruel, L. Di Cioccio, F. Letertre, E. Hugonnard-Bruyère

      Pages 31-38

   5. ELTRAN® (SOI-Epi Wafer™) Technology

      • Takao Yonehara, Kifofumi Sakaguchi

      Pages 39-86

   6. Low Dimension Properties of Nanostructures on Ultrathin Layers of Silicon Formed by Oxidation of Ion Cut SOI Wafers and Electron Lithography

      • V. P. Popov, A. L. Aseev, I. V. Antonova, Yu. V. Nastaushev, T. A. Gavrilova, O. V. Naumova et al.

      Pages 87-91

3. Reliability of SOI devices operating at harsh conditions

   1. SOI For Harsh Environment Applications in the USA

      • Cynthia A. Colinge

      Pages 93-104

   2. Performance and Reliability of Deep Submicron SOI Mosfets in a Wide Temperature Range

      • F. Balestra

      Pages 105-127

   3. Strategies for High Temperature Electronics

      • Colin Johnston, Alison Crossley

      Pages 129-137

   4. Charge Carrier Injection and Trapping in the Buried Oxides of SOI Structures

      • A. N. Nazarov, V. I. Kilchytska, I. P. Barchuk

      Pages 139-158

   5. Cryogenic Investigations of SIMOX Buried Oxide Parameters

      • V. S. Lysenko, I. P. Tyagulski, I. N. Osiyuk, Y. V. Gomeniuk

      Pages 159-166

   6. Gate-All-Around Technology for Harsh Environment Applications

      • J. P. Colinge

      Pages 167-188

   7. Low-Noise High-Temperature SOI Analog Circuits

      • V. Dessard, B. Iniguez, S. Adriaensen, D. Flandre

      Pages 189-209

   8. Influence of γ- Radiation on Short Channel SOI-MOSFETs with Thin SiO2 Films

      • C. Claeys, E. Simoen, V. G. Litovchenko, A. Evtukh, A. Efremov, A. Kizjak et al.

      Pages 211-220

   9. Radiation Effects in SOI Magnetic Sensitive Elements Under Different Radiation Conditions

      • A. D. Mokrushin, N. M. Omeljanovskaja, A. V. Leonov, V. N. Mordkovich, D. M. Pazhin

      Pages 221-227

4. Characterization of advanced SOI materials and devices

   1. Similarity Relation for I-V Characteristics of FETs with different Channel Shape

      • V. N. Dobrovolsky, M. Balucani, A. Ferrari

      Pages 229-232

   2. Laser-Recrystallized SOI Layers for Sensor Applications at Cryogenic Temperatures

      • A. Druzhinin, E. Lavitska, I. Maryamova, Y. Khoverko

      Pages 233-237

   3. Characterization and Modeling of Advanced SOI Materials and Devices

      • F. Allibert, J. Pretet, T. Ernst, J. Jomaah, S. Cristoloveanu

      Pages 239-247

   4. Modeling and Measurements of Generation and Recombination Currents in Thin-Film SOI Gated-Diodes

      • T. E. Rudenko, V. I. Kilchytska

      Pages 249-261

A review of the electrical properties, performance and physical mechanisms of the main silicon-on-insulator (SOI) materials and devices. Particular attention is paid to the reliability of SOI structures operating in harsh conditions. The first part of the book deals with material technology and describes the SIMOX and ELTRAN technologies, the smart-cut technique, SiCOI structures and MBE growth. The second part covers reliability of devices operating under extreme conditions, with an examination of low and high temperature operation of deep submicron MOSFETs and novel SOI technologies and circuits, SOI in harsh environments and the properties of the buried oxide. The third part deals with the characterization of advanced SOI materials and devices, covering laser-recrystallized SOI layers, ultrashort SOI MOSFETs and nanostructures, gated diodes and SOI devices produced by a variety of techniques. The last part reviews future prospects for SOI structures, analyzing wafer bonding techniques, applications of oxidized porous silicon, semi-insulating silicon materials, self-organization of silicon dots and wires on SOI and some new physical phenomena.

• Laser
• Sensor
• crystal
• field-effect transistor
• integrated circuit
• metal oxide semiconductur field-effect transistor
• modeling
• static-induction transistor
• thin film

• Institut de Microélectronique, Electromagnétisme et Photonique, INPG-CNRS, Grenoble, France

  F. Balestra

• Institute of Semiconductor Physics, National Academy of Sciences, Kyiv, Ukraine

  A. Nazarov, V. S. Lysenko

Policies and ethics