Erosion and Growth of Solids Stimulated by Atom and Ion Beams

1. Front Matter

   Pages I-XI

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2. Physical Sputtering of Elemental Metals and Semiconductors

   • Wolfgang O. Hofer

   Pages 1-24

3. Ion Implantation Mechanisms and Related Computational Issues

   • Omer F. Goktepe

   Pages 25-40

4. The Theory of the Preferential Sputtering of Alloys, Including the Role of Gibbsian Segregation

   • Roger Kelly, Antonino Oliva

   Pages 41-69

5. Theory of Surface Erosion and Growth

   • G Carter

   Pages 70-97

6. On the Composition of the Sputtered Flux from Metal Targets and their Compounds

   • G. Betz, W. Husinsky

   Pages 98-102

7. Geometric Methods of Analysis

   • M. J. Nobes

   Pages 103-120

8. Surface Topographical Evolution: Computational Methods of Analysis

   • R. Smith, M. A. Tagg

   Pages 121-145

9. Preferential Sputtering of Tantalum Oxide: Reemission of Helium and Transient Effects in the Altered Layer

   • B. Baretzky, E. Taglauer

   Pages 146-150

10. Experimental Studies of Morphology Development

    • J. L. Whitton

    Pages 151-173

11. Investigation of Microtopography Induced during Sputter Depth Profiling of Ni/Cr Multilayered Structures

    • L. Tanovic, N. Tanovic, A. Zalar

    Pages 174-180

12. Effects of Surface Impurities and Diffusion on Ion Bombardment-Induced Topography Formation

    • Stephen M. Rossnagel

    Pages 181-199

13. Ion Trapping and Cluster Growth

    • A. Van Veen

    Pages 200-221

14. Bubbles, Blisters, and Exfoliation

    • B. M. U. Scherzer

    Pages 222-246

15. Examples of Ion Bombardment Effects On Film Growth and Erosion Processes — Plasma and Beam Experiments

    • Eric Kay

    Pages 247-274

16. On The Modification of Metal/Ceramic Interfaces by Low Energy Ion/Atom Bombardment During Film Growth

    • J. M. Rigsbee, P. A. Scott, R. K. Knipe, V. F. Hock

    Pages 275-280

17. Plasma Etching for Silicon Device Technology

    • C. J. Heslop

    Pages 281-296

18. Reactive Ion Etching of GaAs and Related III-V Compounds

    • Steven Dzioba

    Pages 297-315

19. Ion Beam Enhanced Deposition and Dynamic Ion Mixing for Surface Modification

    • L. Calliari, F. Giacomozzi, L. Guzman, B. Margesin, P. M. Ossi

    Pages 316-323

20. Molecular Beam Epitaxy And Selective MBE Deposition of GaAs Device Structures

    • A. Christou

    Pages 324-337

The members of the organising Committee and their colleagues have, for many years been investigating the evol­ ution of the fas'cinating surface features which develop during sputtering erosion of solids. Such experimental, theoretical and computational studies have also been carried out in many international laboratories and, as well as much cow~onality and agreement, substantial disagreements were unresolved. In view of the increasing importance of such processes in technological applications such as microlitho­ graphic etching for the patterning of solid state devices and in fusion technology it was felt opportune to hold a meeting in this area. Furthermore the use of energetic atomic and ion fluxes is also becoming of increasing importance in assisting or modifying the growth of thin films in a number of important industrial processes and it was therefore rational to combine the, study of both erosional and growth processes in a single meeting. These proceedings include 16 invited review and 15 oral or poster presented contributions to the NATO Advanced Study Institute on the "Erosion and Growth of Solids Stimulated by Atom and Ion Beams". The review contributions span the range from the fundamental concepts of ballistic sputtering, and how this influences surface morphology evolution, through processes involving entrapment of incident species to mechanisms involved in'the use of chemically reactive ion species. Further reviews outline the influence of energetic irradiation upon surface growth by atomic deposition whilst others discuss technologkal applications of both areas of growth and erosion.

• ceramics
• cluster
• diffusion
• metals
• particles
• segregation
• semiconductor
• semiconductors
• thin films

• Physics Department, University of Crete, Heraklion, Crete, Greece

  G. Kiriakidis

• Department of Electronic and Electrical Engineering, University of Salford, Salford, UK

  G. Carter

• Physics Department, Queen’s University, Kingston, Canada

  J. L. Whitton

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