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Electronic Structure of Semiconductor Heterojunctions

  • Book
  • © 1988

Overview

Editors:
  1. Giorgio Margaritondo

    1. University of Wisconsin-Madison, USA

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Part of the book series: Perspectives in Condensed Matter Physics (PCMP, volume 1)

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Table of contents (38 chapters)

  1. Front Matter

    Pages I-XII
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  2. G. Margaritondo, Electronic Structure of Semiconductor Heterojunctions

    1. Front Matter

      Pages XIII-XIII
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    2. Introduction

      • Giorgio Margaritondo
      Pages 1-31

  3. Reprinted Articles

    1. Front Matter

      Pages 33-33
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    2. Experiments on Ge-GaAs Heterojunctions

      • R. L. Anderson
      Pages 35-48

    3. Growth of Microstructures by Molecular Beam Epitaxy

      • A. C. Gossard
      Pages 49-55

    4. A Bird’s-Eye View on the Evolution of Semiconductor Superlattices and Quantum Wells

      • Leo Esaki
      Pages 56-69

    5. Compositionally Graded Semiconductors and their Device Applications

      • Federico Capasso
      Pages 70-98

    6. Resonant Tunneling Through Double Barriers, Perpendicular Quantum Transport Phenomena in Superlattices, and Their Device Applications

      • Federico Capasso, Khalid Mohammed, Alfred Y. Cho
      Pages 99-115

    7. Heterostructure Devices: A Device Physicist Looks at Interfaces

      • Herbert Kroemer
      Pages 116-149

    8. Direct observation of effective mass filtering in InGaAs/lnP superlattices

      • D. V. Lang, A. M. Sergent, M. B. Panish, H. Temkin
      Pages 150-152

    9. Angle-resolved photoemission measurements of band discontinuities in the GaAs-Ge heterojunction

      • P. Perfetti, D. Denley, K. A. Mills, D. A. Shirley
      Pages 153-156

    10. Ge—GaAs(110) interface formation

      • R. S. Bauer, J. C. McMenamin
      Pages 157-162

    11. Observation of the Orientation Dependence of Interface Dipole Energies in Ge-GaAs

      • R. W. Grant, J. R. Waldrop, E. A. Kraut
      Pages 163-166

    12. Internal Photoemission in GaAs/(AlxGa1−x)As Heterostructures

      • G. Abstreiter, U. Prechtel, G. Weimann, W. Schlapp
      Pages 167-172

    13. Quantum States of Confined Carriers in Very Thin AlxGa1-x As-GaAs-AlxGa1-xAs Heterostructures

      • R. Dingle, W. Wiegmann, C. H. Henry
      Pages 173-176

    14. Schottky barriers: An effective work function model

      • J. L. Freeouf, J. M. Woodall
      Pages 177-179

    15. Defective Heterojunction Models

      • J. L. Freeouf, J. M. Woodall
      Pages 180-192

    16. Heterojunctions: Definite breakdown of the electron affinity rule

      • D. W. Niles, G. Margaritondo
      Pages 193-195

    17. Parabolic quantum wells with the GaAs-Al x Ga1−x As system

      • R. C. Miller, A. C. Gossard, D. A. Kleinman, O. Munteanu
      Pages 196-199
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Editors and Affiliations

  • University of Wisconsin-Madison, USA

    Giorgio Margaritondo

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