Electronic Structure of Semiconductor Heterojunctions

Front Matter

Introduction

• Giorgio Margaritondo

Front Matter

Experiments on Ge-GaAs Heterojunctions

• R. L. Anderson

Growth of Microstructures by Molecular Beam Epitaxy

• A. C. Gossard

A Bird’s-Eye View on the Evolution of Semiconductor Superlattices and Quantum Wells

• Leo Esaki

Compositionally Graded Semiconductors and their Device Applications

• Federico Capasso

Resonant Tunneling Through Double Barriers, Perpendicular Quantum Transport Phenomena in Superlattices, and Their Device Applications

• Federico Capasso, Khalid Mohammed, Alfred Y. Cho

Heterostructure Devices: A Device Physicist Looks at Interfaces

• Herbert Kroemer

Direct observation of effective mass filtering in InGaAs/lnP superlattices

• D. V. Lang, A. M. Sergent, M. B. Panish, H. Temkin

Angle-resolved photoemission measurements of band discontinuities in the GaAs-Ge heterojunction

• P. Perfetti, D. Denley, K. A. Mills, D. A. Shirley

Ge—GaAs(110) interface formation

• R. S. Bauer, J. C. McMenamin

Observation of the Orientation Dependence of Interface Dipole Energies in Ge-GaAs

• R. W. Grant, J. R. Waldrop, E. A. Kraut

Internal Photoemission in GaAs/(AlxGa1−x)As Heterostructures

• G. Abstreiter, U. Prechtel, G. Weimann, W. Schlapp

Quantum States of Confined Carriers in Very Thin AlxGa1-x As-GaAs-AlxGa1-xAs Heterostructures

• R. Dingle, W. Wiegmann, C. H. Henry

Schottky barriers: An effective work function model

• J. L. Freeouf, J. M. Woodall

Defective Heterojunction Models

• J. L. Freeouf, J. M. Woodall

Heterojunctions: Definite breakdown of the electron affinity rule

• D. W. Niles, G. Margaritondo

Parabolic quantum wells with the GaAs-Al _x Ga_1−x As system

• R. C. Miller, A. C. Gossard, D. A. Kleinman, O. Munteanu