Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications

1. Front Matter

   Pages i-xvi

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2. Theoretical Modelling of Rare Earth Dopants in GaN

   • R. Jones, B. Hourahine

   Pages 1-24

3. RE Implantation and Annealing of III-Nitrides

   • Katharina Lorenz, Eduardo Alves, Florence Gloux, Pierre Ruterana

   Pages 25-54

4. Lattice Location of RE Impurities in IIINitrides

   • André Vantomme, Bart De Vries, Ulrich Wahl

   Pages 55-98

5. Electroluminescent Devices Using RE-Doped III-Nitrides

   • Akihiro Wakahara

   Pages 99-113

6. Er-Doped GaN and InxGa1-xN for Optical Communications

   • R. Dahal, J. Y. Lin, H. X. Jiang, J. M. Zavada

   Pages 115-157

7. Rare-Earth-Doped GaN Quantum Dot

   • B. Daudin

   Pages 159-188

8. Visible Luminescent RE-doped GaN, AlGaN and AlInN

   • Robert Martin

   Pages 189-219

9. Combined Excitation Emission Spectroscopy (CEES) of RE Ions in Gallium Nitride

   • Volkmar Dierolf

   Pages 221-268

10. Excitation Mechanisms of RE Ions in Semiconductors

    • Alain Braud

    Pages 269-307

11. High-Temperature Ferromagnetism in the Super-Dilute Magnetic Semiconductor GaN:Gd

    • O. Brandt, S. Dhar, L. Pérez, V. Sapega

    Pages 309-342

12. Summary and Prospects for Future Work

    Pages 343-345

13. Back Matter

    Pages 347-355

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This book provides a snapshot of recent progress in the field of rare-earth-doped group III-nitride semiconductors, especially GaN, but extending to AlN and the alloys AlGaN, AlInN and InGaN. This material class is currently enjoying an upsurge in interest due to its ideal suitability for both optoelectronic and spintronic applications. The text first introduces the reader to the historical background and the major theoretical challenges presented when 4f electron systems are embedded in a semiconductor matrix. It details the preparation of samples for experimental study, either by in-situ growth or ion implantation/annealing, and describes their microscopic structural characterisation. Optical spectroscopy is a dominant theme, complicated by site multiplicity, whether in homogeneous hosts or in heterostructures such as quantum dots, and enlivened by the abiding fascination of the energy transfer mechanism between the host material and the lumophore. Finally, the rapid progress towards prospective optoelectronic and spintronic devices is presented along with several examples.

• development
• material
• non-destructive testing
• quantum dot
• semiconductor
• spintronics

• Department of Physics, University of Strathclyde, Glasgow, UK

  Kevin O’Donnell

• Physics Department, Lehigh University, Bethlehem, USA

  Volkmar Dierolf

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