Simulation of Semiconductor Processes and Devices 1998

1. Front Matter

   Pages I-XIV

   PDF

2. TCAD at the SRC

   • R. Goossens

   Pages 1-2

3. TCAD in Selete

   • Norihiko Kotani

   Pages 3-7

4. Integration of Lithography and Etch Simulations

   • Z. Krivokapic, W. D. Heavlin, D. S. Bang

   Pages 8-11

5. Integrated Three-Dimensional Topography Simulation and its Application to Dual-Damascene Processing

   • E. Bär, W. Henke, S. List, J. Lorenz

   Pages 12-15

6. Efficient Algorithms for Three-Dimensional Etching and Deposition Simulation

   • W. Pyka, R. Martins, S. Selberherr

   Pages 16-19

7. Development of a gas-phase chemistry model for numerical prediction of MOVPE of GaN in industrial scale reactors

   • Yu E. Egorov, Yu N. Makarov, I. N. Przhevalskij, R. A. Talalaev, G. Strauch, D. Schmitz et al.

   Pages 20-21

8. Modeling of flow and heat transfer in a vertical reactor for the MOCVD of zirconium-based coatings

   • M. Dauelsberg, L. Kadinski, C. Schmidt, C. Allenbach, M. Morstein

   Pages 22-25

9. Design Optimization of RF Power MOSFET’s Using Large Signal Analysis Device Simulation of Matching Networks

   • F. M. Rotella, G. Ma, Z. Yu, R. W. Dutton

   Pages 26-29

10. Modeling of Temperature Dependence of a Floating Pad Structure’s RF Properties

    • Tarja Riihisaari, Hannu Ronkainen, Hannu Kattelus, Hannu Hakojärvi

    Pages 30-33

11. A comprehensive model of a VLSI spiral inductor derived from the first principles

    • V. I. Kol’dyaev, S. Decoutere, R. Kuhn, L. Deferm

    Pages 34-37

12. Simulation of SiGe Epitaxial Growth for RF-Bipolar Transistors

    • S. Marksteiner, H. Schäfer, T. F. Meister, A. Spitzer

    Pages 38-41

13. Extension of Spherical Harmonic Method to RF Transient Regime

    • C.-K. Lin, Neil Goldsman, C.-H. Chang, Isaak Mayergoyz, Sheldon Aronowitz, Jeffrey Dong et al.

    Pages 42-45

14. Multiscale Modeling of the Implantation and Annealing of Silicon Devices

    • G. H. Gilmer, L. Pelaz, C. Rafferty, M. Jaraiz

    Pages 46-47

15. Dynamics of Arsenic dose loss at the SiO2 interface during TED

    • Reza Kasnavi, Peter B. Griffin, James D. Plummer

    Pages 48-50

16. Damage Accumulation by Arsenic Ion Implantation and Its Impact on Transient Enhanced Diffusion of As and B

    • Kunihiro Suzuki, Norbert Strecker, Wolfgang Fichtner

    Pages 51-54

17. A Simple Continuum Model for Simulation of Boron Interstitial Clusters based on Atomistic Calculations

    • Srinivasan Chakravarthi, Scott T. Dunham

    Pages 55-58

18. Electromagnetic Simulation for the Modeling of Interconnects

    • P. A. Rolland

    Pages 59-60

19. Layout-Based 3D Solid Modeling of IC Structures and Interconnects Including Electrical Parameter Extraction

    • Xiaoning Qi, Sherry Y. Shen, Ze-Kai Hsiau, Zhiping Yu, Robert Dutton

    Pages 61-64

20. Exponential Expansion for Rapid and Accurate Extraction of Interconnect Capacitance

    • Hoan H. Pham, Arokia Nathan

    Pages 65-68

This volume contains the proceedings of the 1998 International Conference on Simulation of Semiconductor Processes and Devices and provides an open forum for the presentation of the latest results and trends in modeling and simulation of semiconductor equipment, processes and devices. Topics include: • semiconductor equipment simulation • process modeling and simulation • device modeling and simulation of complex structures • interconnect modeling • integrated systems for process, device, circuit simulation and optimisation • numerical methods and algorithms • compact modeling and parameter extraction • modeling for RF applications • simulation and modeling of new devices (heterojunction based, SET’s, quantum effect devices, laser based ...)

• algorithm
• integrated circuit
• modeling
• numerical methods
• optimization
• simulation
• single-electron transistor
• complexity

• IMEC vzw, Leuven, Belgium

  Kristin Meyer, Serge Biesemans

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