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Simulation of Semiconductor Devices and Processes

Vol.5

  • Conference proceedings
  • © 1993

Overview

Editors:
  1. Siegfried Selberherr

    1. Institut für Mikroelektronik, Technische Universität Wien, Austria

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  2. Hannes Stippel

    1. Institut für Mikroelektronik, Technische Universität Wien, Austria

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  3. Ernst Strasser

    1. Institut für Mikroelektronik, Technische Universität Wien, Austria

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Table of contents (123 papers)

  1. Front Matter

    Pages i-xx
    Download chapter PDF

  2. Challenges to Achieving Accurate Three-Dimensional Process Simulation

    • M. E. Law
    Pages 1-8

  3. Modeling Nano-Structure Devices

    • K. Hess, L. F. Register
    Pages 9-16

  4. About Boltzmann Equations for Transport Modeling in Semiconductors

    • F. Poupaud
    Pages 17-20

  5. Applied TCAD in Mega-Bits Memory Design

    • H. Masuda, H. Pimingstorfer, H. Sato, K. Tsuneno, K. Ichikawa, H. Tobe et al.
    Pages 21-24

  6. Process Flow Representation within the VISTA Framework

    • Ch. Pichler, S. Selberherr
    Pages 25-28

  7. A Powerful TCAD System Including Advanced RSM Techniques for Various Engineering Optimization Problems

    • R. Cartuyvels, R. Booth, S. Kubicek, L. Dupas, K. M. De Meyer
    Pages 29-32

  8. Modeling of VLSI MOSFET Characteristics Using Neural Networks

    • Ph. Lindorfer, C. Bulucea
    Pages 33-36

  9. Coupling a Statistical Process-Device Simulator with a Circuit Layout Extractor for a Realistic Circuit Simulation of VLSI Circuits

    • W. Kuźmicz, W. Denisiuk, J. Gempel, Z. Jaworski, M. Niewczas, A. Pfitzner et al.
    Pages 37-40

  10. Simulation of Self-Heating Effects in a Power p-i-n Diode

    • K. Kells, S. Müller, G. Wachutka, W. Fichtner
    Pages 41-44

  11. Impact of Cell Geometries and Electrothermal Effects on IGBT Latch-Up in 2D-Simulation

    • H. Brunner, Y. C. Gerstenmaier, H.-J. Mattausch
    Pages 45-48

  12. On the Influence of Thermal Diffusion and Heat Flux on Bipolar Device and Circuit Performance

    • M. Stecher, B. Meinerzhagen, I. Bork, W. L. Engl
    Pages 49-52

  13. 2-D Electrothermal Simulation and Failure Analysis of GTO Turn-off with Complete Chopper Circuit Parasitics

    • Y. C. Gerstenmaier, H. Brunner
    Pages 53-56

  14. 3D Thermal/Electrical Simulation of Breakdown in a BJT Using a Circuit Simulator and a Layout-to-Circuit Extraction Tool

    • B. H. Krabbenborg, H. C. de Graaff, A. J. Mouthan, H. Boezen, A. Bosma, C. Tekin
    Pages 57-60

  15. Nonlocal Oxide Injection Models

    • K. P. Traar, A. v. Schwerin
    Pages 61-64

  16. Electron Transport in Silicon Dioxide at Intermediate and High Electric Fields

    • M. Hackel, H. Kosina, S. Selberherr
    Pages 65-68

  17. Efficient and Accurate Simulation of EEPROM Write Time and its Degradation Using MINIMOS

    • A. v. Schwerin, W. Bergner, H. Jacobs
    Pages 69-72

  18. Influence of Oxide-Damage on Degradation-Effects in Bipolar-Transistors

    • W. Bergner, B. Seidl, H. Wurzer, R. Mahnkopf, H. Klose
    Pages 73-76

  19. The Application of Sparse Supernodal Factorization Algorithms for Structurally Symmetric Linear Systems in Semiconductor Device Simulation

    • A. Liegmann, W. Fichtner
    Pages 77-80

  20. Newton-GMRES Method for Coupled Nonlinear Systems Arising in Semiconductor Device Simulation

    • C. Simon, M. Sadkane, S. Mottet
    Pages 81-84
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Keywords

About this book

The "Fifth International Conference on Simulation of Semiconductor Devices and Processes" (SISDEP 93) continues a series of conferences which was initiated in 1984 by K. Board and D. R. J. Owen at the University College of Wales, Swansea, where it took place a second time in 1986. Its organization was succeeded by G. Baccarani and M. Rudan at the University of Bologna in 1988, and W. Fichtner and D. Aemmer at the Federal Institute of Technology in Zurich in 1991. This year the conference is held at the Technical University of Vienna, Austria, September 7 - 9, 1993. This conference shall provide an international forum for the presentation of out­ standing research and development results in the area of numerical process and de­ vice simulation. The miniaturization of today's semiconductor devices, the usage of new materials and advanced process steps in the development of new semiconduc­ tor technologies suggests the design of new computer programs. This trend towards more complex structures and increasingly sophisticated processes demands advanced simulators, such as fully three-dimensional tools for almost arbitrarily complicated geometries. With the increasing need for better models and improved understand­ ing of physical effects, the Conference on Simulation of Semiconductor Devices and Processes brings together the simulation community and the process- and device en­ gineers who need reliable numerical simulation tools for characterization, prediction, and development.

Editors and Affiliations

  • Institut für Mikroelektronik, Technische Universität Wien, Austria

    Siegfried Selberherr, Hannes Stippel, Ernst Strasser

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