Authors:
- Nominated as an Excellent Doctoral Dissertation by Peking University in 2014
- Proposes innovative methods for addressing the challenges in the source/drain engineering of germanium nMOSFETs
- Experimentally demonstrates the methods’ effectiveness with regard to reducing parasitic resistance in the source/drain of germanium nMOSFETs
- Includes supplementary material: sn.pub/extras
Part of the book series: Springer Theses (Springer Theses)
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Table of contents (5 chapters)
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Front Matter
About this book
Authors and Affiliations
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Peking University, Institute of Microelectronics, Beijing, China
Zhiqiang Li
About the author
Dr. Li received his Bachelor degree of Science from Sichuan University in 2009, and Ph.D from Peking University in 2014
Prizes and awards:
2009-2014, Peking University
Leo KoGuan Scholarship, Chenming Hu Scholarship, Merit Student, Creative Talent Award.
2005-2009, Sichuan University
National Scholarship (twice), National Encouragement Scholarship, Xinyuan Scholarship (twice),
Comprehensive First-class Scholarship, Excellent Student Leader.
Publications:
1. Zhiqiang Li, Xia An, Min Li, Quanxin Yun, Meng Lin, Ming Li, Xing Zhang, and Ru Huang, “Low Electron Schottky Barrier Height of NiGe/Ge Achieved by Ion-Implantation after Germanidation Technique,” IEEE Electron Device Lett.,vol. 33, no. 12, pp. 1687–1689, Dec. 2012.
2. Zhiqiang Li, Xia An, Min Li, Quanxin Yun, Meng Lin, Ming Li, Xing Zhang, and Ru Huang, “Morphology and Electrical Performance Improvement of NiGe/Ge Contact by P and Sb Co-implantation,” IEEE Electron Device Lett., vol. 34, no. 5, pp. 596–598, May. 2013.
3. Zhiqiang Li, Xia An, Quanxin Yun, Meng Lin, Min Li, Ming Li, Xing Zhang, and Ru Huang, “Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge n⁺/p Diode Achieved by Multiple Implantation and Multiple Annealing Technique,” IEEE Electron Device Lett., vol. 34, no. 9, pp. 1097–1099, Sep. 2013.
4. Zhiqiang Li, Xia An, Quanxin Yun, Meng Lin, Xing Zhang and Ru Huang, “Tuning Schottky Barrier Height in Metal/n-Type Germanium by Inserting an Ultrathin Yttrium Oxide Film,” ECS Solid State Lett., Vol. 1, no. 4, pp. Q33-Q34, 2012.
5. Zhiqiang Li, Xia An, Min Li, Quanxin Yun, Meng Lin, Ming Li, Xing Zhang, and Ru Huang, “Study on Schottky Barrier Modulation of NiGe/Ge by Ion-implantation after Germanidation Technique,” The 11th ICSICT, Xi’an, 2012.
Bibliographic Information
Book Title: The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices
Authors: Zhiqiang Li
Series Title: Springer Theses
DOI: https://doi.org/10.1007/978-3-662-49683-1
Publisher: Springer Berlin, Heidelberg
eBook Packages: Physics and Astronomy, Physics and Astronomy (R0)
Copyright Information: Springer-Verlag Berlin Heidelberg 2016
Hardcover ISBN: 978-3-662-49681-7Published: 22 June 2016
Softcover ISBN: 978-3-662-57026-5Published: 07 June 2018
eBook ISBN: 978-3-662-49683-1Published: 24 March 2016
Series ISSN: 2190-5053
Series E-ISSN: 2190-5061
Edition Number: 1
Number of Pages: XIV, 59
Number of Illustrations: 3 b/w illustrations, 49 illustrations in colour
Topics: Semiconductors, Electronic Circuits and Devices, Nanoscale Science and Technology, Solid State Physics