SiC Power Materials

1. Front Matter

   Pages I-XIX

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2. Materials Science and Engineering of Bulk Silicon Carbides

   • T. Sudarshan

   Pages 1-61

3. Fundamental Properties of SiC: Crystal Structure, Bonding Energy, Band Structure, and Lattice Vibrations

   • J. Dong, A.-B. Chen

   Pages 63-87

4. Sublimation Growth of SiC Single Crystals

   • N. Ohtani, T. Fujimoto, M. Katsuno, H. Yashiro

   Pages 89-121

5. Crystal Growth of Silicon Carbide: Evaluation and Modeling

   • E. Pernot, M. Pons, R. Madar

   Pages 123-160

6. Lattice Dynamics of Defects and Thermal Properties of 3C-SiC

   • D. N. Talwar

   Pages 161-208

7. Optical and Interdisciplinary Analysis of Cubic SiC Grown on Si by Chemical Vapor Deposition

   • Z. C. Feng

   Pages 209-276

8. Electron Paramagnetic Resonance Characterization of SiC

   • M. E. Zvanut

   Pages 277-302

9. Material Selection and Interfacial Reaction in Ohmic-Contact Formation on SiC

   • W. Lu, W. E. Collins, W. C. Mitchel

   Pages 303-343

10. Oxidation, MOS Capacitors, and MOSFETs

    • S. Dimitrijev, H. B. Harrison, P. Tanner, K. Y. Cheong, J. Han

    Pages 345-373

11. 4H-SiC Power-Switching Devices for Extreme-Environment Applications

    • Z. Luo, T. Chen, D. C. Sheridan, J. D. Cressler

    Pages 375-409

12. SiC Nuclear-Radiation Detectors

    • N. B. Strokan, A. M. Ivanov, A. A. Lebedev

    Pages 411-445

13. Back Matter

    Pages 447-452

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In the 1950s Shockley predicted that SiC would quickly replace Si as a result of its superior material properties. In many ways he was right and today there is an active industry based on SiC, with new achievements being reported every year. This book reviews the progress achieved in SiC research and development, particularly over the past 10 years. It presents the essential properties of 3C-, 6H- and 4H-SiC polytypes including structural, electrical, optical, surface and interface properties; describes existing key SiC devices and also the challenges in materials growth and device fabrication of the 21st century. Overall it provides an up-to-date reference book suitable for a broad audience of newcomers, graduate students and engineers in industrial R&D.

• Electronics
• Optoelectronics
• Oxidation
• Power devices
• Power semiconductors
• SiC
• Vibration
• development
• dynamics
• environment
• materials science
• modeling
• semiconductors

• Graduate Institute of Electro-Optical Engineering, Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, ROC

  Zhe Chuan Feng

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