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Thermodynamic Basis of Crystal Growth

P-T-X Phase Equilibrium and Non-Stoichiometry

  • Book
  • © 2002

Overview

Authors:
  1. Jacob H. Greenberg

    1. Department of Inorganic and Analytical Chemistry, The Hebrew University of Jerusalem, Jerusalem, Israel

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  • The reader will benefit from learning about the recent achievements in the preparation of inorganic materials using controlled stoichiometry
  • The book is abundantly illustrated with P-T-X diagrams of inorganic materials
  • Includes supplementary material: sn.pub/extras

Part of the book series: Springer Series in Materials Science (SSMATERIALS, volume 44)

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Table of contents (5 chapters)

  1. Front Matter

    Pages I-1
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  2. Introduction

    • Jacob H. Greenberg
    Pages 3-4

  3. Thermodynamic Fundamentals

    • Jacob H. Greenberg
    Pages 5-90

  4. Experimental Methods of Investigating P-T-X Phase Equilibrium

    • Jacob H. Greenberg
    Pages 91-103

  5. Experimental Data on P-T-X Phase Diagrams and Non-stoichiometry

    • Jacob H. Greenberg
    Pages 105-233

  6. Conclusion

    • Jacob H. Greenberg
    Pages 235-236

  7. Back Matter

    Pages 237-251
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Keywords

About this book

It is particularly symptomatic that a volume concerning P-T-X phase equilibrium should appear in the Materials Science Series. Entering the 21st century, progress in modern electronics is increasingly becoming associated with devices based not only on silicon but also on chemical compounds. These include both semiconduc­ tors and, in the last 15 years, multinary oxides with high-To superconductor properties. The critical role of chemical processes in the technologies of these materials is quite evident, and in recent years has stimulated vigorous research activity in the physical chemistry of materials, resulting in a renaissance of this field. The leading role in these efforts belongs to thermodynamics, in particular, computer modeling of chemical processes, phase equilibrium, and controlled synthesis of inorganic materials with preliminary fixed stoichiometric composition. Especially important contributions have been made regarding non­ stoichiometry and our understanding of the crucial relationship between composition and properties of the materials since the development of the vapor pressure scanning approach to the phenomenon of non-stoichiometry. This method of the in situ investigation of the crystal composition directly at high temperatures 3 4 proved to be of an unparalleled precision of 10- _10 at. % and made it possible to obtain in an analytical form functional dependences of the crystal composition on temperature, pressure, and composition of the crystallizing matrix for crystals with sub-O. l at. % range of existence.

Reviews

"We recommend this book to any physicist concerned with phase diagrams and to any materials scientist concerned with semiconducting compounds."

--Physicalia

Authors and Affiliations

  • Department of Inorganic and Analytical Chemistry, The Hebrew University of Jerusalem, Jerusalem, Israel

    Jacob H. Greenberg

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