The Blue Laser Diode

1. Front Matter

   Pages I-XVI

   PDF

2. Introduction

   • Shuji Nakamura, Gerhard Fasol

   Pages 1-5

3. Background

   • Shuji Nakamura, Gerhard Fasol

   Pages 7-20

4. Physics of Gallium Nitride and Related Compounds

   • Shuji Nakamura, Gerhard Fasol

   Pages 21-34

5. GaN Growth

   • Shuji Nakamura, Gerhard Fasol

   Pages 35-77

6. p-Type GaN Obtained by Electron Beam Irradiation

   • Shuji Nakamura, Gerhard Fasol

   Pages 79-91

7. n-Type GaN

   • Shuji Nakamura, Gerhard Fasol

   Pages 93-102

8. p-Type GaN

   • Shuji Nakamura, Gerhard Fasol

   Pages 103-127

9. InGaN

   • Shuji Nakamura, Gerhard Fasol

   Pages 129-175

10. Zn and Si Co-Doped InGaN / AlGaN Double-Heterostructure Blue and Blue-Green LEDs

    • Shuji Nakamura, Gerhard Fasol

    Pages 177-199

11. InGaN Single-Quantum-Well LEDs

    • Shuji Nakamura, Gerhard Fasol

    Pages 201-221

12. Room-Temperature Pulsed Operation of Laser Diodes

    • Shuji Nakamura, Gerhard Fasol

    Pages 223-264

13. Emission Mechanisms of LEDs and LDs

    • Shuji Nakamura, Gerhard Fasol

    Pages 265-275

14. Room Temperature CW Operation of InGaN MQW LDs

    • Shuji Nakamura, Gerhard Fasol

    Pages 277-304

15. Latest Results: Lasers with Self-Organized InGaN Quantum Dots

    • Shuji Nakamura, Gerhard Fasol

    Pages 305-312

16. Conclusions

    • Shuji Nakamura, Gerhard Fasol

    Pages 313-315

17. Biographies

    • Shuji Nakamura, Gerhard Fasol

    Pages 317-318

18. Back Matter

    Pages 319-343

    PDF

Shuji Nakamura's development of commercial light emitters from Gallium Nitride and related materials has recently propelled these materials into the mainstream of interest. It is very rare that a breakthrough of such proportion can be converted so quickly into successful commercial products. One factor for this success is Shuji Nakamura's hard work, another factor is Nichia's enlightened founder, Chairman and joint owner, Nobuo Ogawa without whom Nakamura probably could not have done this work, other factors are Professor Pankove's and Professor Akasaki's pioneering work. The amazing speed of GaN breakthroughs caused an information gap. There is much less information available on GaN then on silicon or GaAs, and most current semiconductor text books do not even mention Gallium Nitride. One of the aims of the present book is to close this information gap, another important aim is to provide a report on the development of Gal­ lium Nitride based light emitters and lasers and their properties. Both aims are rapidly moving targets: recent results near the end of the book even report, that InGaN lasers might become the first commercial lasers using self-assembled quantum dots.

• development
• diodes
• laser
• laser diode
• material
• quantum dot
• semiconductor

"...will be lapped up by semiconductor specialists keen to know more." - Bob Johnstone in New Scientist
"...a very coherent and extremely useful synthesis...A must have for students and researchers in the field." - The Materials Research Society

• Nichia Chemical Industries Ltd., Anan, Tokushima-ken 774, Japan

  Shuji Nakamura

• Eurotechnology Japan Ltd., Shinjuku-ku, Tokyo 160, Japan

  Gerhard Fasol

Policies and ethics