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Power Semiconductors

  • Book
  • © 1984

Overview

Authors:
  1. M. Kubát

    1. Department of Microelectronics, Technical University of Prague, Prague 6, Czechoslovakia

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Table of contents (12 chapters)

  1. Front Matter

    Pages I-XXV
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  2. Introduction

    • M. Kubát
    Pages 1-4

  3. Overview of Selected Facts from Semiconductor Physics

    • M. Kubát
    Pages 5-53

  4. Properties of a pn Junction in a Semiconductor; Semiconductor—Metal Contact

    • M. Kubát
    Pages 54-142

  5. Transistor and Thyristor Effects, pnpn Structures in Different Modes

    • M. Kubát
    Pages 143-185

  6. Dynamic Behaviour of Semiconductor Structures

    • M. Kubát
    Pages 186-224

  7. Relationship Between Initial Physical-Technological Parameters and Final Electrical Parameters of Thyristors

    • M. Kubát
    Pages 225-256

  8. Review of Basic Types of Semiconductor Switching Devices, Their Properties and Their Characteristics

    • M. Kubát
    Pages 257-320

  9. Technology of Non-Diffusion pn Junctions and Ohmic Contacts

    • M. Kubát
    Pages 321-350

  10. Diffusion Technology

    • M. Kubát
    Pages 351-384

  11. Load Current and Cooling of Diodes and Thyristors

    • M. Kubát
    Pages 385-410

  12. Properties of Diodes and Thyristors in Electric Circuits

    • M. Kubát
    Pages 411-454

  13. Review of the Basic Power Circuits with Semiconductor Devices

    • M. Kubát
    Pages 455-492

  14. Back Matter

    Pages 493-507
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Keywords

About this book

The book contains a summary of our knowledge of power semiconductor structures. It presents first a short historic introduction (Chap. I) as well as a brief selection of facts from solid state physics, in particular those related to power semiconductors (Chap. 2). The book deals with diode structures in Chap. 3. In addition to fundamental facts in pn-junction theory, the book covers mainly the important processes of power structures. It describes the emitter efficiency and function of microleaks (shunts). the p +p and n + n junctions, and in particular the recent theory of the pin, pvn and p1tn junctions, whose role appears to be decisive for the forward mode not only of diode structures but also of more complex ones. For power diode structures the reverse mode is the decisive factor in pn-junction breakdown theory. The presentation given here uses engineering features (the multiplication factor M and the experimentally detected laws for the volume and surface of crystals), which condenses the presentation and makes the mathematical apparatus simpler. The discussion of diode structures is complemented by data on the tunnel phenomenon as well as on the properties of the semiconductor­ metal contact which forms the outer layers of the diode or more complex structure. A separate chapter (Chap. 4) is devoted to the two-transistor equivalent of the four­ layer structure and the solution of the four-layer structure in various modes. This presentation is also directed mainly towards the power aspect and the new components.

Authors and Affiliations

  • Department of Microelectronics, Technical University of Prague, Prague 6, Czechoslovakia

    M. Kubát

Bibliographic Information

  • Book Title: Power Semiconductors

  • Authors: M. Kubát

  • DOI: https://doi.org/10.1007/978-3-662-02418-8

  • Publisher: Springer Berlin, Heidelberg

  • eBook Packages: Springer Book Archive

  • Copyright Information: Prof. Ing. Milan Kubát, Dr. Sc. 1984

  • Softcover ISBN: 978-3-662-02420-1Published: 20 November 2013

  • eBook ISBN: 978-3-662-02418-8Published: 17 April 2013

  • Edition Number: 1

  • Number of Pages: XXV, 507

  • Number of Illustrations: 57 b/w illustrations

  • Additional Information: Jointly published with SNTL, Verlag für technische Literatur Prague

  • Topics: Semiconductors, Optical and Electronic Materials, Surfaces and Interfaces, Thin Films

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