Electronic Properties of Doped Semiconductors

1. Front Matter

   Pages I-XII

   PDF

2. Lightly Doped Semiconductors

   1. Front Matter

      Pages 1-1

      PDF

   2. The Structure of Isolated Impurity States

      • Boris I. Shklovskii, Alex L. Efros

      Pages 2-24

   3. Localization of Electronic States

      • Boris I. Shklovskii, Alex L. Efros

      Pages 25-51

   4. The Structure of the Impurity Band for Lightly Doped Semiconductors

      • Boris I. Shklovskii, Alex L. Efros

      Pages 52-73

   5. A General Description of Hopping Conduction in Lightly Doped Semiconductors

      • Boris I. Shklovskii, Alex L. Efros

      Pages 74-93

   6. Percolation Theory

      • Boris I. Shklovskii, Alex L. Efros

      Pages 94-136

   7. Dependence of Hopping Conduction on the Impurity Concentration and Strain in the Crystal

      • Boris I. Shklovskii, Alex L. Efros

      Pages 137-154

   8. Hopping Conduction in a Magnetic Field

      • Boris I. Shklovskii, Alex L. Efros

      Pages 155-179

   9. Activation Energy for Hopping Conduction

      • Boris I. Shklovskii, Alex L. Efros

      Pages 180-201

   10. Variable-Range Hopping Conduction

       • Boris I. Shklovskii, Alex L. Efros

       Pages 202-227

   11. Correlation Effects on the Density of States and Hopping Conduction

       • Boris I. Shklovskii, Alex L. Efros

       Pages 228-251

3. Heavily Doped Semiconductors

   1. Front Matter

      Pages 253-254

      PDF

   2. Electronic States in Heavily Doped Semiconductors

      • Boris I. Shklovskii, Alex L. Efros

      Pages 255-267

   3. The Density-of-States Tail and Interband Light Absorption

      • Boris I. Shklovskii, Alex L. Efros

      Pages 268-294

   4. The Theory of Heavily Doped and Highly Compensated Semiconductors (HDCS)

      • Boris I. Shklovskii, Alex L. Efros

      Pages 295-313

4. Computer Modelling

   1. Front Matter

      Pages 315-315

      PDF

   2. Modelling the Impurity Band of a Lightly Doped Semiconductor and Calculating the Electrical Conductivity

      • Boris I. Shklovskii, Alex L. Efros

      Pages 316-352

5. Back Matter

   Pages 353-393

   PDF

First-generation semiconductors could not be properly termed "doped- they were simply very impure. Uncontrolled impurities hindered the discovery of physical laws, baffling researchers and evoking pessimism and derision in advocates of the burgeoning "pure" physical disciplines. The eventual banish­ ment of the "dirt" heralded a new era in semiconductor physics, an era that had "purity" as its motto. It was this era that yielded the successes of the 1950s and brought about a new technology of "semiconductor electronics". Experiments with pure crystals provided a powerful stimulus to the develop­ ment of semiconductor theory. New methods and theories were developed and tested: the effective-mass method for complex bands, the theory of impurity states, and the theory of kinetic phenomena. These developments constitute what is now known as semiconductor phys­ ics. In the last fifteen years, however, there has been a noticeable shift towards impure semiconductors - a shift which came about because it is precisely the impurities that are essential to a number of major semiconductor devices. Technology needs impure semiconductors, which unlike the first-generation items, are termed "doped" rather than "impure" to indicate that the impurity levels can now be controlled to a certain extent.

• Properties
• Semiconductors
• Absorption
• crystal
• electronic properties
• electronics
• semiconductor
• semiconductor physics

• A.F. IOFFE Physico-Technical Institute, Academy of Sciences of the USSR, Leningrad, USSR

  Boris I. Shklovskii, Alex L. Efros

Policies and ethics